SavantIC Semiconductor Product Specification BUV42 Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·Fast switching times ·Low collector saturation voltage APPLICATIONS ·For switching applications PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings (Tc=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 350 V VCEO Collector-emitter voltage Open base 250 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 12 A ICM Collector current-peak 18 A IB Base current 2.5 A IBM Base current-peak 4 A PT Total power dissipation 120 W Tj Junction temperature 200 Tstg Storage temperature -65~200 TC.25 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case VALUE 1.46 UNIT /W SavantIC Semiconductor Product Specification BUV42 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A ; L=25mH V(BR)EBO Emitter-base breakdown voltage IE=50mA; IC=0 VCEsat-1 Collector-emitter saturation voltage IC=2A; IB=0.13A Tj=100 0.8 0.9 V VCEsat-2 Collector-emitter saturation voltage IC=4A; IB=0.4A Tj=100 0.9 1.2 V VCEsat-3 Collector-emitter saturation voltage IC=6A; IB=0.75A Tj=100 1.2 1.5 V VBEsat-1 Base-emitter saturation voltage IC=4A; IB=0.4A Tj=100 1.3 V VBEsat-2 Base-emitter saturation voltage IC=6A; IB=0.75A Tj=100 1.5 V ICEV Collector cut-off current VCE=VCEV; VBE=-1.5V TC=100 0.5 2.0 mA IEBO Emitter cut-off current VEB=5V; IC=0 1 mA 0.3 0.4 µs 1.0 1.6 µs 0.15 0.3 µs 250 V 7 V Switching times resistive load tr Rise time ts Storage time tf Fall time IC=6A ;IB1=0.75A RB2=3.3@; VCC=200V VBB=-5V; Tp=30µs 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 BUV42