2N7002 115 mAMPS, 60VOLTS, RDS(on)=7.5 Small Signal MOSFET Elektronische Bauelemente RoHS Compliant Product Small Signal MOSFET 115 mAmps, 60 Volts N–Channel SOT–23 MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDSS 60 Vdc Drain–Gate Voltage (RGS = 1.0 MΩ) VDGR 60 Vdc Drain Current – Continuous TC = 25°C (Note 1.) – Continuous TC = 100°C (Note 1.) – Pulsed (Note 2.) ID ID IDM ±ā115 ±ā75 ±ā800 mAdc VGS VGSM ±ā20 ±ā40 Vdc Vpk Symbol Max Unit PD 225 1.8 mW mW/°C Gate–Source Voltage – Continuous – Non–repetitive (tp ≤ 50 µs) N–Channel THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR–5 Board (Note 3.) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient RθJA 556 °C/W Total Device Dissipation Alumina Substrate,(Note 4.) TA = 25°C Derate above 25°C PD 300 mW mW/°C Thermal Resistance, Junction to Ambient RθJA 417 °C/W TJ, Tstg –ā55 to +150 °C Junction and Storage Temperature 3 2 1 2 SOT–23 CASE 318 STYLE 21 2.4 MARKING DIAGRAM & PIN ASSIGNMENT Drain 3 1. The Power Dissipation of the package may result in a lower continuous drain current. 2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%. 3. FR–5 = 1.0 x 0.75 x 0.062 in. 4. Alumina = 0.4 x 0.3 x 0.025 in 99.5% alumina. 025D −− 1 Gate 2 Source 02 = Device Code 7002 5 = Y ear 2005 D = Weeks A~z http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 1 of 5 2N7002 115 mAMPS, 60VOLTS, RDS(on)=7.5 W Small Signal MOSFET Elektronische Bauelemente ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Min Typ Max Unit V(BR)DSS 60 – – Vdc IDSS – – – – 1.0 500 µAdc Gate–Body Leakage Current, Forward (VGS = 20 Vdc) IGSSF – – 100 nAdc Gate–Body Leakage Current, Reverse (VGS = –ā20 Vdc) IGSSR – – –100 nAdc VGS(th) 1.0 – 2.5 Vdc On–State Drain Current (VDS ≥ 2.0 VDS(on), VGS = 10 Vdc) ID(on) 500 – – mA Static Drain–Source On–State Voltage (VGS = 10 Vdc, ID = 500 mAdc) (VGS = 5.0 Vdc, ID = 50 mAdc) VDS(on) – – – – 3.75 0.375 Static Drain–Source On–State Resistance (VGS = 10 V, ID = 500 mAdc) TC = 25°C TC = 125°C (VGS = 5.0 Vdc, ID = 50 mAdc) TC = 25°C TC = 125°C rDS(on) – – – – – – – – 7.5 13.5 7.5 13.5 gFS 80 – – mmhos Input Capacitance (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) Ciss – – 50 pF Output Capacitance (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) Coss – – 25 pF Reverse Transfer Capacitance (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) Crss – – 5.0 pF td(on) – – 20 ns td(off) – – 40 ns VSD – – –1.5 Vdc IS – – –115 mAdc ISM – – –800 mAdc Characteristic OFF CHARACTERISTICS Drain–Source Breakdown Voltage (VGS = 0, ID = 10 µAdc) Zero Gate Voltage Drain Current (VGS = 0, VDS = 60 Vdc) TJ = 25°C TJ = 125°C ON CHARACTERISTICS (Note 2.) Gate Threshold Voltage (VDS = VGS, ID = 250 µAdc) Forward Transconductance (VDS ≥ 2.0 VDS(on), ID = 200 mAdc) Vdc Ohms DYNAMIC CHARACTERISTICS SWITCHING CHARACTERISTICS (Note 2.) Turn–On Delay Time Turn–Off Delay Time (VDD = 25 Vdc, ID ^ 500 mAdc, RG = 25 Ω, RL = 50 Ω, Vgen = 10 V) BODY–DRAIN DIODE RATINGS Diode Forward On–Voltage (IS = 11.5 mAdc, VGS = 0 V) Source Current Continuous (Body Diode) Source Current Pulsed 2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%. http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 2 of 5 2N7002 115 mAMPS, 60VOLTS, RDS(on)=7.5 W Small Signal MOSFET Elektronische Bauelemente TYPICAL ELECTRICAL CHARACTERISTICS 2.0 1.0 VDS = 10 V TA = 25°C 1.6 VGS = 10 V 1.4 9V 1.2 8V 1.0 7V 0.8 6V 0.6 0.4 5V 0.2 4V 3V 0 I D, DRAIN CURRENT (AMPS) I D, DRAIN CURRENT (AMPS) 1.8 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 VDS, DRAIN SOURCE VOLTAGE (VOLTS) 9.0 0.8 125°C 0.6 0.4 0.2 0 10 2.4 2.2 1.8 VGS = 10 V ID = 200 mA 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -ā60 -ā20 +ā20 +ā60 T, TEMPERATURE (°C) +ā100 Figure 3. Temperature versus Static Drain–Source On–Resistance http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 VGS, GATE SOURCE VOLTAGE (VOLTS) 9.0 10 Figure 2. Transfer Characteristics VGS(th) , THRESHOLD VOLTAGE (NORMALIZED) r DS(on) , STATIC DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) Figure 1. Ohmic Region 2.0 25°C -ā55°C +ā140 1.2 1.05 VDS = VGS ID = 1.0 mA 1.1 1.10 1.0 0.95 0.9 0.85 0.8 0.75 0.7 -ā60 -ā20 +ā20 +ā60 T, TEMPERATURE (°C) +ā100 +ā140 Figure 4. Temperature versus Gate Threshold Voltage Any changing of specification will not be informed individual Page 3 of 5 2N7002 115 mAMPS, 60VOLTS, RDS(on)=7.5 W Small Signal MOSFET Elektronische Bauelemente INFORMATION FOR USING THE SOT–23 SURFACE MOUNT PACKAGE MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to insure proper solder connection interface between the board and the package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process. 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 inches mm SOT–23 POWER DISSIPATION The power dissipation of the SOT–23 is a function of the pad size. This can vary from the minimum pad size for soldering to a pad size given for maximum power dissipation. Power dissipation for a surface mount device is determined by TJ(max), the maximum rated junction temperature of the die, RθJA, the thermal resistance from the device junction to ambient, and the operating temperature, TA. Using the values provided on the data sheet for the SOT–23 package, PD can be calculated as follows: PD = TJ(max) – TA RθJA The values for the equation are found in the maximum ratings table on the data sheet. Substituting these values into the equation for an ambient temperature TA of 25°C, one can calculate the power dissipation of the device which in this case is 225 milliwatts. PD = 150°C – 25°C 556°C/W = 225 milliwatts The 556°C/W for the SOT–23 package assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 225 milliwatts. There are other alternatives to achieving higher power dissipation from the SOT–23 package. Another alternative would be to use a ceramic substrate or an aluminum core board such as Thermal Cladt. Using a board material such as Thermal Clad, an aluminum core board, the power dissipation can be doubled using the same footprint. SOLDERING PRECAUTIONS The melting temperature of solder is higher than the rated temperature of the device. When the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. Therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected. • Always preheat the device. • The delta temperature between the preheat and soldering should be 100°C or less.* • When preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When using infrared heating with the reflow soldering method, the difference shall be a maximum of 10°C. http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A • The soldering temperature and time shall not exceed 260°C for more than 10 seconds. • When shifting from preheating to soldering, the maximum temperature gradient shall be 5°C or less. • After soldering has been completed, the device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. • Mechanical stress or shock should not be applied during cooling. * Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device. Any changing of specification will not be informed individual Page 4 of 5 2N7002 115 mAMPS, 60VOLTS, RDS(on)=7.5 W Small Signal MOSFET Elektronische Bauelemente PACKAGE DIMENSIONS SOT–23 (TO–236) CASE 318–08 ISSUE AF NOTES: ąă1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. ąă2. CONTROLLING DIMENSION: INCH. ąă3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. A L 3 1 V B S 2 G C D H K J DIM A B C D G H J K L S V INCHES MIN MAX 0.1102 0.1197 0.0472 0.0551 0.0350 0.0440 0.0150 0.0200 0.0701 0.0807 0.0005 0.0040 0.0034 0.0070 0.0140 0.0285 0.0350 0.0401 0.0830 0.1039 0.0177 0.0236 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.35 0.69 0.89 1.02 2.10 2.64 0.45 0.60 STYLE 21: PIN 1. GATE 2. SOURCE 3. DRAIN http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 5 of 5