SST2605
-4.0A, -30V,RDS(ON) 80mΩ
Elektronische Bauelemente
P-Channel Enhancement Mode Power Mos.FET
RoHS Compliant Product
SOT-26
Description
0.37Ref.
0.20
The SST2605 utiltzed advance processing techniques to achieve the lowest
0.60 Ref.
possible on-resistance, extermely efficient and cost-effectiveness device.
2.60
3.00
0.25
The SST2605 is universally used for all commercial-industrial applications.
1.40
1.80
0.30
0.55
0.95 Ref.
0~0.1
2.70
3.10
o
1.20Ref.
0
o
10
Features
Dimensions in millimeters
* Fast Switching Characteristic
D
D
S
* Lower Gate Charge
6
5
4
D
* Small Footprint & Low Profile Package
2605
Date Code
G
S
1
2
3
D
D
G
Absolute Maximum Ratings
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
3
Pulsed Drain Current
-4.0
A
o
ID@TA=70 C
-3.3
A
IDM
-20
A
2.0
W
0.016
W/ C
PD@TA=25 C
Linear Derating Factor
Operating Junction and Storage Temperature Range
V
V
o
Total Power Dissipation
-30
±20
ID@TA=25 C
1
Unit
o
VGS
3
Ratings
Tj, Tstg
o
o
-55~+150
C
Thermal Data
Parameter
Thermal Resistance Junction-ambient
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Symbol
3
Rthj-a
Unit
Ratings
62.5
o
C /W
Any changing of specification will not be informed individual
Page 1 of 4
SST2605
-4.0A, -30V,RDS(ON) 80mΩ
P-Channel Enhancement Mode Power Mos.FET
Elektronische Bauelemente
o
Electrical Characteristics( Tj=25 C Unless otherwise specified)
Parameter
Symbol
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Gate-Source Leakage Current
o
Drain-Source Leakage Current (Tj=55 C)
Static Drain-Source On-Resistance
2
Typ.
Max.
Unit
-30
_
_
V
BVDS/ Tj
_
-0.02
_
V/ C
VGS(th)
-1.0
_
-3.0
V
VDS=VGS, ID=-250uA
IGSS
_
_
±100
nA
VGS=± 20V
_
_
-1
uA
VDS=-30V,VGS=0
_
_
-25
uA
VDS=-24V,VGS=0
_
_
80
IDSS
RDS(ON)
_
_
120
Qg
_
5.5
8.8
Gate-Source Charge
Qgs
_
1
_
Gate-Drain ("Miller") Charge
Qgd
2.6
_
Total Gate Charge
2
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
_
Td(ON)
_
7
_
Tr
_
6
_
Td(Off)
_
18
_
Tf
_
4
_
_
400
640
90
_
30
_
6
Ciss
Output Capacitance
Test Condition
BVDSS
o
Drain-Source Leakage Current (Tj=25 C)
Min.
Coss
_
Reverse Transfer Capacitance
Crss
_
Forward Transconductance
Gfs
_
Symbol
Min.
o
mΩ
VGS=0V, ID=-250uA
o
Reference to 25 C ,ID=-1mA
VGS=-10V, ID=-4.0A
VGS=-4.5V, ID=-3.0A
nC
ID=-4.0A
VDS=-24V
VGS=-4.5V
VDD=-15V
ID=-1A
nS
VGS=-10V
RG=3.3Ω
RD=15 Ω
pF
VGS=0V
VDS=-25V
_
S
VDS=-5V, ID=-4.0A
Max.
Unit
Test Condition
-1.2
V
IS=-1.6A, VGS=0V.
f=1.0MHz
Source-Drain Diode
Parameter
Forward On Voltage
2
Reverse Recovery Time
VDS
2
Reverse Recovery Charge
Trr
Qrr
_
_
_
Typ.
_
21
14
_
_
nS
Is=-4.0A, VGS=0V
nC
dl/dt=100A/us
Notes: 1.Pulse width limited by safe operating area.
2.Pulse width≦300us, dutycycle≦2%.
O
3.Surface mounted on 1 in2 copper pad of FR4 board; 156 C/W when mounted on Min. copper pad.
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 2 of 4
SST2605
Elektronische Bauelemente
-4.0A -30V,RDS(ON) 80mΩ
P-Channel Enhancement Mode Power Mos.FET
Characteristics Curve
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristics of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 3 of 4
SST2605
Elektronische Bauelemente
Fig 7. Gate Charge Characteristics
Fig 9. Maximum Safe Operating Area
Fig 11. Switching Time Waveform
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
-4.0A, -30V,RDS(ON) 80mΩ
P-Channel Enhancement Mode Power Mos.FET
Fig 8. Typical Capacitance Characteristics
Fig 10. Effective Transient Thermal Impedance
Fig 12. Gate Charge Waveform
Any changing of specification will not be informed individual
Page 4 of 4