SemiWell Semiconductor SBN13003A High Voltage Fast-Switching NPN Power Transistor Features Symbol ○ 3.Base 2.Collector ○ c - Very High Switching Speed (Typical [email protected]) - Minimum Lot-to-Lot hFE Variation - Low VCE(sat) (Typical [email protected]/0.25A) - Wide Reverse Bias S.O.A ○ 1.Emitter General Description This device is designed for high voltage, high speed switching characteristic required such as lighting system, switching regulator, inverter and deflection circuit. TO-92 1 Absolute Maximum Ratings Symbol Parameter 23 Value Units VCES Collector-Emitter Voltage ( VBE = 0 ) 700 V VCEO Collector-Emitter Voltage ( IB = 0 ) 400 V VEBO Emitter-Base Voltage ( IC = 0 ) 9.0 V Collector Current 1.5 A Collector Peak Current ( tP ＜ 5 ms ) 3.0 A Base Current 0.75 A IBM Base Peak Current ( tP ＜ 5 ms ) 1.5 A PC Total Dissipation at TC = 25 °C 1.1 W - 65 ~ 150 °C 150 °C Value Units 113.6 °C/W IC ICM IB TSTG TJ Storage Temperature Max. Operating Junction Temperature Thermal Characteristics Symbol RθJA Parameter Thermal Resistance, Junction-to-Ambient Mar, 2003. Rev. 3 1/6 Copyright@SemiWell Semiconductor Co., Ltd., All rights reserved SBN13003A Electrical Characteristics Symbol ( TC = 25 °C unless otherwise noted ) Parameter Condition Min Typ Max Units - - 1.0 5.0 mA 400 - - V Collector Cut-off Current ( VBE = - 1.5V ) VCE = 700V VCE = 700V VCEO(sus) Collector-Emitter Sustaining Voltage ( IB = 0 ) IC = 10 mA VCE(sat) Collector-Emitter Saturation Voltage IC = 0.5A IC = 1.0A IC = 1.5A IB = 0.1A IB = 0.25A IB = 0.5A - - 0.3 0.5 1.0 V VBE(sat) Base-Emitter Saturation Voltage IC = 0.5A IC = 1.0A IB = 0.1A IB = 0.25A - - 1.0 1.2 V hFE DC Current Gain IC = 0.5A IC = 1.0A VCE = 2V VCE = 2V 10 5 - 30 25 ton ts tf Resistive Load Turn-On Time Storage Time Fall Time IC = 1.0A IB1 = 0.2A 0.25 1.32 0.23 1.0 3.0 0.4 ts tf Inductive Load Storage Time Fall Time VCC = 15V IB1 = 0.2A L = 0.35mH IC = 1.0A IB2 = -0.5A Vclamp = 300V - 1.2 0.12 4.0 0.3 ㎲ ts tf Inductive Load Storage Time Fall Time VCC = 15V IB1 = 0.2A L = 0.35mH IC = 1.0A IB2 = -0.5A Vclamp = 300V TC = 100 °C - 1.8 0.16 5.0 0.4 ㎲ ICEV VCC = 125V IB2 = - 0.2A - TP = 25㎲ ※ Notes : Pulse Test : Pulse width ≤ 300㎲, Duty cycle ≤ 2% 2/6 TC = 100 °C ㎲ SBN13003A Fig 1. Static Characteristics Fig 2. DC Current Gain 40 2.4 IB = 500mA 2.1 IB = 400mA IB = 300mA 1.8 IB = 250mA IB = 200mA 1.5 IB = 150mA 1.2 IB = 100mA 0.9 IB = 50mA 0.6 30 hFE, DC Current Gain IC, Collector Current [A] 2.7 o TJ = 125 C 20 o TJ = 25 C 10 ※ Notes : VCE = 5V VCE = 1V 0.3 0.0 0 1 2 3 4 0 0.01 5 0.1 VCE, Collector-Emitter Voltage [V] Fig 4. Base-Emitter Saturation Voltage Fig 3. Collector-Emitter Saturation Voltage 10 1.2 1.1 VBE, Base-Emitter Voltage [V] VCE, Collector-Emitter Voltage [V] 1 IC, Collector Current [A] 1 o TJ = 125 C 0.1 o TJ = 25 C 0.01 ※ Note : hFE = 5 0.1 1.0 o TJ = 25 C 0.9 0.8 0.7 o TJ = 125 C 0.5 0.1 1 ※ Note : hFE = 5 0.6 1 IC, Collector Current [A] IC, Collector Current [A] Fig 6. Resistive Load Storage Time Fig 5. Resistive Load Fall Time 10 1000 ※ Notes : VCC = 125V hFE = 5 IB1 = - IB2 tstg, Time [us] tf, Time [ns] o TJ = 25 C 100 ※ Notes : VCC = 125V hFE = 5 IB1 = - IB2 0.0 0.3 0.6 0.9 1.2 IC, Collector Current [A] 1.5 o TJ = 25 C 1 1.8 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 IC, Collector Current [A] 3/6 SBN13003A Fig 7. Safe Operation Areas Fig 9. Power Derating Curve 1 125 Power Derating Factor (%) 10 IC, Collector Current [A] 0 10 -1 10 DC -2 10 100 75 50 25 ※ Single Pulse -3 10 0 0 10 1 10 2 10 VCE, Collector-Emitter Clamp Voltage [V] 4/6 3 10 0 50 100 150 o TC, Case Temperature ( C) 200 SBN13003A Inductive Load Switching & RBSOA Test Circuit LC f IC IB1 IB VCE D.U.T RBB VClamp VCC VBE(off) Resistive Load Switching Test Circuit RC IC IB1 IB VCE D.U.T RBB VCC VBE(off) 5/6 SBN13003A TO-92 Package Dimension Dim. mm Min. Inch Typ. A Max. Min. 4.2 Typ. Max. 0.165 B 3.7 0.146 C 4.43 4.83 0.174 0.190 D 14.07 14.87 0.554 0.585 E F 0.4 4.43 4.83 G 0.016 0.174 0.190 0.45 0.017 H 2.54 0.100 I 2.54 0.100 J 0.33 0.48 A 0.013 0.019 E B F C G 1 D H 6/6 1. Emitter 2. Collector 3. Base 2 3 I J