SIM100D12SV1 Preliminary “HALF-BRIDGE” IGBT VCES = 1200V Ic = 100A Features ▪Trench gate + field stopper, using VCE(ON) typ. = 1.7V Applications @ Ic = 100A ▪ AC & DC Motor controls Infineon chip design ▪ VVVF inverters ▪ 10µs Short circuit capability ▪ Optimized for high frequency inverter ▪ Low turn-off losses Type Welding machines ▪ Short tail current for over 18KHz ▪ High frequency SMPS ▪ Positive VCE(on) ▪ UPS, Robotics temperature coefficient Package : V1 Absolute Maximum Ratings @ Tc = 25℃ (per leg) Symbol Parameter VCES Collector-to-Emitter Voltage VGES Gate emitter voltage IC VGE = 0V, Condition Ratings Unit IC = 500µA 1200 V ± 20 V 100(140) A 200 A 100(140) A 200 A 10 µs 2500 V Continuous Collector Current TC = 80℃(25℃) Pulsed collector current TC = 25℃ Diode Continuous Forward Current TC = 80℃(25℃) IFM Diode Maximum Forward Current TC=(25℃) TSC Short Circuit Withstand Time Viso Isolation Voltage test Tj Junction Temperature -40 ~ 150 ℃ Tstg Storage Temperature -40 ~ 125 ℃ Weight of Module 190 g Power Terminal Screw : M5 3.5 Nm Terminal connection Screw : M5 3.5 Nm ICM IF Weight Mounting Torque AC 1 minute -1- SIM100D12SV1 Preliminary Electrical Characteristics @ Tj = 25℃ (unless otherwise specified) Symbol Parameters Min Typ Max V(BR)CES Collector-to-Emitter Breakdown Voltage - 1350 1374 VCE(ON) Collector-to-Emitter Saturation Voltage 1.4 1.7 2.1 VGE(th) Gate Threshold Voltage 4.0 5.8 6.5 Unit Test conditions VGE = 0V, IC = 200µA V IC = 100A, VGE = 15V VCE = VGE, IC = 250µA ICES Zero Gate Voltage Collector Current - - 500 µA VGE = 0V, VCE = 1200V IGES Gate-to-Emitter Leakage Current - - ± 100 nA VCE = 0V, VGE = ± 20V VFM Diode Forward Voltage Drop 1.4 1.7 2.1 V IC = 100A Switching Characteristic @ Tj = 25℃ (unless otherwise specified) Symbol Parameters Min Typ Max Cies Input capacitance - 8653 - Coss Output capacitance - 452 - Cres Reverse transfer capacitance - 395 - td(on) Turn-on delay time - 342 - Rise time - 45 - Turn-off delay time - 624 - tf Fall time - 108 - Irr Diode Peak Reverse Recovery current - 155 - tr td(off) Unit Test conditions VCC = 25V, pF VGE = 0V f = 1.0MHz Tj = 125℃, VCC = 600V IC = 100A, ns VGE = ±15V RG = 3.9Ω Tj = 125℃, VCC = 600V A IF = 100A, trr Diode Reverse Recovery time - 100 - ns RG = 3.9Ω, di/dt=1200A/us Thermal Characteristic Values Symbol Parameters Min Typ Max RΘJC Junction-to-Case (IGBT Part, Per 1/2 Module) - - 0.20 RΘJC Junction-to-Case (Diode Part, Per 1/2 Module) - - 0.41 RΘCS Case-to-Heat Sink (Conductive grease applied) - 0.05 - -2- Unit ℃/W Preliminary Fig 1. Maximum DC Collector Current SIM100D12SV1 Fig 2. Power Dissipation vs. Case vs. Case Temperature Temperature Fig 3. Typ. IGBT Output Characteristics Fig 4. Typ. IGBT Output Characteristics TJ = 25℃; tp = 80µs TJ = 125℃; tp = 80µs -3- Preliminary Fig 5. Typ. Diode Forward Characteristics SIM100D12SV1 Fig 6. Typ. Transfer Characteristics tp = 80µs VCE = 50V; tp = 10µs Fig 7. Typical VCE vs. VGE Fig 8. Typical VCE vs. VGE TJ = 25℃ TJ = 125℃ -4- Preliminary Fig 9. Typ. Capacitance vs. VCE SIM100D12SV1 Fig 10. Typical Gate Charge vs. VGE VGE = 0V; f = 1Mhz ICE = 60A; L = 600µH Fig 11. Typ. Switching Time vs. IC Fig 12. Typ. Switching Time vs. RG TJ = 125℃; L = 200µH; VCE = 600V TJ = 125℃; L = 200µH; VCE = 600V RG = 3.9Ω; VGE = 15V ICE = 100A; VGE = 15V -5- Preliminary SIM100D12SV1 Fig 13. Normalized Transient Thermal Impedance, Juncion-to-Case (IGBT) Fig 14. Normalized Transient Thermal Impedance, Juncion-to-Case (DIODE) -6- Preliminary SIM100D12SV1 Package Outline (dimensions in mm) OCT., 2008 Headquarter: Sales & Marketing #602, B/D, 402 BLD, BLK4, Techno-park, Wonmi-Gu, Marketing: [email protected] Bucheon-City, S.KOREA Sales: [email protected] Tel)+82-32-234-4781, WEB-site: WWW. Semiwell.com Fax)+82-32-234-4789 -7-