ETC STF4A60

STF4A60
SemiWell Semiconductor
UL : E228720
Bi-Directional Triode Thyristor
Symbol
○
Features
▼▲
Repetitive Peak Off-State Voltage : 600V
R.M.S On-State Current ( IT(RMS)= 4 A )
◆ High Commutation dv/dt
◆
○
◆
1.T1
3.Gate
○
TO-220F
General Description
This device is suitable for direct coupling to TTL, HTL, CMOS
and application such as various logic functions, low power
AC switching applications, such as fan speed, small light
controllers and home appliance equipment.
Absolute Maximum Ratings
Symbol
2.T2
1
2
3
( TJ = 25°C unless otherwise specified )
Parameter
Condition
Ratings
Units
600
V
4.0
A
30/33
A
I2 t
4.5
A2 s
Peak Gate Power Dissipation
1.5
W
Average Gate Power Dissipation
0.1
W
IGM
Peak Gate Current
1.0
A
VGM
Peak Gate Voltage
7.0
V
Operating Junction Temperature
- 40 ~ 125
°C
Storage Temperature
- 40 ~ 150
°C
2.0
g
VDRM
Repetitive Peak Off-State Voltage
IT(RMS)
R.M.S On-State Current
TC = 99 °C
ITSM
Surge On-State Current
One Cycle, 50Hz/60Hz, Peak,
Non-Repetitive
I2 t
PGM
PG(AV)
TJ
TSTG
Mass
Aug, 2003. Rev. 1
1/6
[email protected] Semiconductor Co., Ltd., All rights reserved.
STF4A60
Electrical Characteristics
Symbol
Conditions
Ratings
Min.
Typ.
Max.
Unit
IDRM
Repetitive Peak Off-State
Current
VD = VDRM, Single Phase, Half Wave
TJ = 125 °C
─
─
1.0
mA
VTM
Peak On-State Voltage
IT = 6 A, Inst. Measurement
─
─
1.6
V
─
─
20
─
─
20
I+GT1
Ⅰ
I -GT1
Ⅱ
I -GT3
Ⅲ
─
─
20
V+GT1
Ⅰ
─
─
1.5
V-GT1
Ⅱ
─
─
1.5
V-GT3
Ⅲ
─
─
1.5
VGD
(dv/dt)c
IH
Rth(j-c)
2/6
Items
Gate Trigger Current
Gate Trigger Voltage
VD = 6 V, RL=10 Ω
VD = 6 V, RL=10 Ω
mA
V
Non-Trigger Gate Voltage
TJ = 125 °C, VD = 1/2 VDRM
0.2
─
─
V
Critical Rate of Rise Off-State
Voltage at Commutation
TJ = 125 °C, [di/dt]c = -2.0 A/ms,
VD=2/3 VDRM
5.0
─
─
V/㎲
─
5.0
─
mA
─
─
4.0
°C/W
Holding Current
Thermal Impedance
Junction to case
STF4A60
Fig 1. Gate Characteristics
Fig 2. On-State Voltage
2
10
1
VGM (7V)
10
On-State Current [A]
PG(AV) (0.1W)
25 ℃
0
10
IGM (1A)
Gate Voltage [V]
PGM (1.5W)
1
10
o
125 C
0
10
o
25 C
VGD(0.2V)
-1
-1
10
10
1
2
10
3
10
10
0.5
1.0
1.5
2.0
θ
θ
θ
θ
Power Dissipation [W]
5.5
4.5
θ
2π
θ
4.0
360°
3.5
θ
3.0
: Conduction Angle
2.5
Allowable Case Temperature [ oC]
6.0
π
3.0
3.5
4.0
4.5
Fig 4. On State Current vs.
Allowable Case Temperature
Fig 3. On State Current vs.
Maximum Power Dissipation
5.0
2.5
On-State Voltage [V]
Gate Current [mA]
o
= 180
o
= 150
o
= 120
o
= 90
θ = 60
o
θ = 30
o
2.0
1.5
1.0
130
125
120
115
o
θ
π
110
θ = 30o
θ = 60 o
θ = 90 o
θ = 120
o
θ = 150
o
θ = 180
2π
θ
105
360°
θ
100
: Conduction Angle
0.5
0.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
95
0.0
5.0
0.5
1.0
1.5
RMS On-State Current [A]
2.0
2.5
3.0
3.5
4.0
4.5
5.0
RMS On-State Current [A]
Fig 6. Gate Trigger Voltage vs.
Junction Temperature
Fig 5. Surge On-State Current Rating
( Non-Repetitive )
3
35
10
50Hz
o
15
10
+
GT1
-
V GT1
-
V GT3
2
10
o
20
V
VGT (25 C)
X 100 (%)
60Hz
25
VGT (t C)
Surge On-State Current [A]
30
5
0
0
10
1
10
1
10
Time (cycles)
2
10
-50
0
50
100
150
o
Junction Temperature [ C]
3/6
STF4A60
Fig 7. Gate Trigger Current vs.
Junction Temperature
Fig 8. Transient Thermal Impedance
3
10
o
I
2
10
I
+
GT1
GT1
GT3
o
IGT (t C)
I
IGT (25 C)
X 100 (%)
o
Transient Thermal Impedance [ C/W]
10
1
1
10
-50
0
50
100
150
-2
-1
10
0
10
1
10
o
10
Time (sec)
Junction Temperature [ C]
Fig 9. Gate Trigger Characteristics Test Circuit
10Ω
10Ω
▼▲
6V
▼▲
●
A
V
4/6
10Ω
▼▲
●
6V
RG
A
V
●
6V
RG
A
V
●
●
●
Test Procedure Ⅰ
Test Procedure Ⅱ
Test Procedure Ⅲ
RG
2
10
STF4A60
TO-220F Package Dimension
Dim.
mm
Typ.
Min.
10.4
6.18
9.55
13.47
6.05
1.26
3.17
1.87
2.57
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
Max.
10.6
6.44
9.81
13.73
6.15
1.36
3.43
2.13
2.83
Inch
Typ.
Min.
0.409
0.243
0.376
0.530
0.238
0.050
0.125
0.074
0.101
2.54
5.08
0.100
0.200
2.51
1.25
0.45
0.6
2.62
1.55
0.63
1.0
φ
φ 1
φ 2
0.099
0.049
0.018
0.024
0.103
0.061
0.025
0.039
3.7
3.2
1.5
0.146
0.126
0.059
A
E
F
Max.
0.417
0.254
0.386
0.540
0.242
0.054
0.135
0.084
0.111
I
H
B
φ
φ1
C
φ2
L
G
M
1
2
D
1. T1
2. T2
3. Gate
3
J
N
O
K
5/6
STF4A60
TO-220F Package Dimension, Forming
Dim.
mm
Typ.
Min.
10.4
6.18
9.55
8.4
6.05
1.26
3.17
1.87
2.57
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Max.
10.6
6.44
9.81
8.66
6.15
1.36
3.43
2.13
2.83
Inch
Typ.
Min.
0.409
0.243
0.376
0.331
0.238
0.050
0.125
0.074
0.101
2.54
5.08
0.100
0.200
2.51
1.25
0.45
0.6
2.62
1.55
0.63
1.0
0.099
0.049
0.018
0.024
0.103
0.061
0.025
0.039
5.0
3.7
3.2
1.5
φ
φ 1
φ 2
0.197
0.146
0.126
0.059
A
E
F
I
H
B
φ
φ1
C
φ2
L
G
M
1
D
2
3
N
O
J
P
K
6/6
Max.
0.417
0.254
0.386
0.341
0.242
0.054
0.135
0.084
0.111
1. T1
2. T2
3. Gate