MPS8599 PNP Silicon Amplifier Transistor On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (Ta=25oC) Symbol Value Unit Collector Emitter Voltage -VCEO 80 V Collector Base Voltage -VCBO 80 V Emitter Base Voltage -VEBO 5 V -IC 500 mA Ptot 625 mW 5 mW/ C 1.5 W 12 mW/ C Collector Current o Total Device Dissipation @ TA=25 C o Derate above 25 C o Total Device Dissipation @ TC=25 C Ptot o Derate above 25 C O O O Operating and Storage Junction Temperature Range TJ,Ts -55 to +150 Thermal Resistance, Junction to Ambient RθJA 200 O 83.3 O Thermal Resistance, Junction to Case RθJC C C/W C/W SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 24/06/2003 MPS8599 Characteristics (TA=25 oC) Symbol Min. Typ. Max. Unit hFE hFE hFE 100 100 75 - 300 - - -VCEsat -VCEsat - - 0.4 0.3 V V -VBE(on) 0.6 - 0.8 V Collector-Emitter Breakdown Voltage at -IC=10mA -V(BR)CEO 80 - - V Collector-Base Breakdown Voltage at -IC=100μA -V(BR)CBO 80 - - V Emitter-Base Breakdown Voltage at -IE=10μA -V(BR)EBO 5 - - V -ICES - - 0.1 μA -ICBO - - 0.1 μA -IEBO - - 0.1 μA fT 150 - - MHz Output Capacitance at -VCB=5V, f=1MHz Cobo - - 8 pF Input Capacitance at -VEB=0.5V, f=1MHz Cibo - - 30 pF DC Current Gain at -VCE=5V, -IC=1mA at -VCE=5V, -IC=10mA at -VCE=5V, -IC=100mA Collector Saturation Voltage at -IC=100mA, -IB=5mA at -IC=100mA, -IB=10mA Base Emitter On Voltage at -VCE=5V, -IC=10mA Collector Cutoff Current at -VCE=60V Collector Cutoff Current at -VCB=80V Emitter Cutoff Current at -VEB=4V Current-Gain-Bandwidth Product at -VCE=5V, -IC=10mA, f=100MHz Notes: Pulse test: Pulse width≦300μs, Duty cycle=2%. SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 24/06/2003 MPS8599 Capacitance Current gain - bandwidth product 300 40 TJ =25 C TJ =25 C -5V 20 Capacitance, pF fT (MHz) 200 VCE= -1V 100 70 Cibo 10 4 Cobo 2 30 -1 -100 -10 -0.1 -1 Reverse voltage, V Ic, mA Active - region safe operating area Switching times 1000 -1000 VCC= -40V IC/IB=10 IB1=IB2 TJ=25 C Time, ns ts -100 duty cycle∝10% Ic, (mA) -100 -10 tf 100 tr current limit thermal limit td@VBE(off)= -0.5V second breakdown limit -10 -1 10 -100 -10 -10 -100 -200 Ic, mA VCE, V "ON" Voltages DC current gain 1 300 TJ =25 C TJ =125 C 0.8 DC current gain Voltage, V VBEsat@IC/IB=10 0.6 VBE@VCE=5V 0.4 0.2 25 C 100 -55 C VCE= -5V VCEsat@IC/IB=10 0 1 0.2 10 Ic, 100 200 30 -0.2 mA -1 -10 Ic, -100 -200 mA SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 24/06/2003 MPS8599 Base emitter temperature coefficient Collector saturation region -1 20mA 1.6 50mA IC=10mA 100mA Temperature coefficient, mV/ C 2 200mA VCE, V 1.2 0.8 0.4 0 TJ =25 C -1.4 -1.8 R VB for VBE -2.2 -2.6 -3 1 0.1 0.02 -55 C to 125 C 10 20 0.2 I B , mA 10 1 Ic, 100 mA SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 24/06/2003 200