ST 2N3416 / 2N3417 NPN Silicon Epitaxial Planar Transistor General Purpose Amplifier For use as general purpose amplifiers and switches requiring collector current to 300 mA. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings* (Ta = 25℃) Symbol Value Unit Collector Emitter Voltage VCEO 50 V Collector Base Voltage VCBO 50 V Emitter Base Voltage VEBO 5 V IC 500 mA 625 mW 5 mW/ C Collector Current Total Device Dissipation O Derate above 25 C Ptot O Junction Temperature Tj 150 O Storage Temperature Range TS -55 to +150 O C C *These ratings are limiting values above which the serviceability of semiconductor device may be impaired. Notes: 1) These ratings are based on a maximum junction temperature of 150℃ 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 25/07/2003 ST 2N3416 / 2N3417 Characteristics at Tamb=25 OC Symbol Min. Typ. Max. Unit ST 2N3416 hFE 75 - 225 - ST 2N3417 hFE 180 - 540 - ST 2N3416 hfe 75 - - - ST 2N3417 hfe 180 - - - at VCB=25V ICBO - - 100 nA at VCB=18V, Ta=100℃ ICBO - - 15 μA IEBO - - 100 nA VCE(sat) - - 0.3 V VBE(sat) 0.6 - 1.3 V V(BR)CEO 50 - - V V(BR)CBO 50 - - V V(BR)EBO 5 - - DC Current Gain at VCE=4.5V, IC=2mA Small Signal Current Gain at VCE=4.5V, IC=2mA, f =1kHz Collector Cutoff Current Emitter Cutoff Current at VEB=5V Collector Saturation Voltage at IC=50mA, IB=3mA Base Saturation Voltage at IC=50mA, IB=3mA Collector Emitter Breakdown Voltage* at IC=10Ma Collector Base Breakdown Voltage at IC=10μA Emitter Base Breakdown Voltage at IE=10μA Thermal Resistance Junction to Ambient Thermal Resistance Junction to Case RthA RthC - - V 200 O 83.3 O C /W C /W *Pulse Test : Pulse width≦300μs, Duty Cycle≦2%. SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 25/07/2003