ST 2N5400 / 2N5401 PNP Silicon Epitaxial Planar Transistors for general purpose, high voltage amplifier applications. As complementary types the NPN transistors ST 2N5550 and ST 2N5551 are recommended. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (Ta = 25oC) Symbol Value Unit ST 2N5400 -VCEO 120 V ST 2N5401 -VCEO 150 V ST 2N5400 -VCBO 130 V ST 2N5401 -VCBO 160 V -VEBO 5 V Collector Current -IC 600 mA Power Dissipation Ptot 625 Junction Temperature Tj 150 o Storage Temperature Range TS -55 to +150 o Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage 1) 1) mW C C Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case. SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated: 07/12/2002 ST 2N5400 / 2N5401 Characteristics at Tamb=25 oC Symbol Min. Typ. Max. Unit ST 2N5400 hFE 30 - - - ST 2N5401 hFE 50 - - - ST 2N5400 hFE 40 - 180 - ST 2N5401 hFE 60 - 240 - ST 2N5400 hFE 40 - - - ST 2N5401 hFE 50 - - - ST 2N5400 -V(BR)CEO 120 - - V ST 2N5401 -V(BR)CEO 150 - - V ST 2N5400 -V(BR)CBO 130 - - V ST 2N5401 -V(BR)CBO 160 - - V -V(BR)EBO 5 - - V DC Current Gain at-VCE=5V, -IC=1mA at -VCE=5V, -IC=10mA at -VCE=5V, -IC=50mA Collector Emitter Breakdown Voltage at -IC=1mA Collector Base Breakdown Voltage at -IC=100μA Emitter Base Breakdown Voltage at -IE=10μA Collector Cutoff Current at -VCB=100V ST 2N5400 -ICBO - - 100 nA at -VCB=120V ST 2N5401 -ICBO - - 50 nA -IEBO - - 50 nA at -IC=10mA, -IB=1mA -VCE sat - - 0.2 V at -IC=50mA, -IB=5mA -VCE sat - - 0.5 V at -IC=10mA, -IB=1mA -VBEsat - - 1 V at -IC=50mA, -IB=5mA -VBEsat - - 1 V at -VCE=10V,-IC=10mA,f=100MHz ST 2N5400 fT 100 - 400 MHz ST 2N5401 fT 100 - 400 MHz CCBO - - 6 pF F - - 8 Emitter Cutoff Current at -VEB=3V Collector Saturation Voltage Base Saturation Voltage Gain Bandwidth Product Collector Base Capacitance at -VCB=10V, f=1MHz Noise Figure at -VCE=5V,-IC=200μA,RG=2kΩ,f=30HZ…15kHZ Thermal Resistance Junction to Ambient 1) RthA - - 200 dB 1) K/W Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case. SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated: 07/12/2002 ST 2N5400 / 2N5401 IC - VBE Collector Current Ic (mA) Power Dissipation Ptot (mW) Ptot-Ta Ambient Temperature Ta ( ℃ ) Base Emitter Voltage VBE (V) V CE(sat), V BE(sat) - I Transition Frequency Collector Emitter Saturation Base Emitter Saturation Voltage V C E ( s a t ) , V B E ( s at ) ( m V ) fT - IC C o l l e c t o r C u r r e n t IC ( m A ) C VBE(sat) VCE(sat) C o l l e c t o r C u r r e n t IC ( m A ) Collector Output Capacitance Cob (pF) Cob - VCB Collector Base Voltage VCB (V) SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated: 07/12/2002