SIRECT SDT18GK18

STD/SDT18
Thyristor-Diode Modules, Diode-Thyristor Modules
Dimensions in mm (1mm=0.0394")
Type
STD/SDT18GK08
STD/SDT18GK12
STD/SDT18GK14
STD/SDT18GK16
STD/SDT18GK18
Symbol
VRSM
VDSM
V
900
1300
1500
1700
1900
Test Conditions
ITRMS, IFRMS TVJ=TVJM
ITAVM, IFAVM TC=85oC; 180o sine
VRRM
VDRM
V
800
1200
1400
1600
1800
Maximum Ratings
Unit
40
18
A
ITSM, IFSM
TVJ=45oC
VR=0
TVJ=TVJM
VR=0
t=10ms (50Hz), sine
t=8.3ms (60Hz), sine
t=10ms(50Hz), sine
t=8.3ms(60Hz), sine
400
420
350
370
A
2
TVJ=45oC
VR=0
TVJ=TVJM
VR=0
t=10ms (50Hz), sine
t=8.3ms (60Hz), sine
t=10ms(50Hz), sine
t=8.3ms(60Hz), sine
800
730
600
570
A2s
TVJ=TVJM
f=50Hz, tp=200us
VD=2/3VDRM
IG=0.45A
diG/dt=0.45A/us
repetitive, IT=45A
150
non repetitive, IT=ITAVM
500
i dt
(di/dt)cr
A/us
TVJ=TVJM;
VDR=2/3VDRM
RGK= ; method 1 (linear voltage rise)
1000
V/us
10
5
W
PGAV
0.5
W
VRGM
10
V
TVJ
TVJM
Tstg
-40...+125
125
-40...+125
(dv/dt)cr
PGM
VISOL
Md
Weight
TVJ=TVJM
IT=ITAVM
50/60Hz, RMS
_
IISOL<1mA
tp=30us
tp=300us
t=1min
t=1s
Mounting torque (M5)
Terminal connection torque (M5)
Typical including screws
o
C
3000
3600
V~
2.5-4.0/22-35
2.5-4.0/22-35
Nm/lb.in.
90
g
STD/SDT18
Thyristor-Diode Modules, Diode-Thyristor Modules
Symbol
Test Conditions
Characteristic Values
Unit
3
mA
IT, IF=80A; TVJ=25 C
2.05
V
For power-loss calculations only (TVJ=125oC)
0.85
V
IRRM, IDRM TVJ=TVJM; VR=VRRM; VD=VDRM
VT, VF
VTO
o
18
rT
VGT
IGT
VGD
o
m
VD=6V;
TVJ=25 C
TVJ=-40oC
1.5
1.6
V
VD=6V;
TVJ=25oC
TVJ=-40oC
100
200
mA
TVJ=TVJM;
VD=2/3VDRM
0.2
V
10
mA
IGD
o
IL
TVJ=25 C; tp=10us; VD=6V
IG=0.45A; diG/dt=0.45A/us
450
mA
IH
TVJ=25oC; VD=6V; RGK=
200
mA
2
us
150
us
50
uC
6
A
o
tgd
TVJ=25 C; VD=1/2VDRM
IG=0.45A; diG/dt=0.45A/us
tq
TVJ=TVJM; IT=20A; tp=200us; -di/dt=10A/us
VR=100V; dv/dt=20V/us; VD=2/3VDRM
QS
TVJ=TVJM; IT, IF=25A; -di/dt=0.64A/us
typ.
IRM
RthJC
per thyristor/diode; DC current
per module
1.3
0.65
K/W
RthJK
per thyristor/diode; DC current
per module
1.5
0.75
K/W
dS
Creeping distance on surface
12.7
mm
dA
Strike distance through air
9.6
mm
a
Maximum allowable acceleration
50
m/s2
FEATURES
APPLICATIONS
ADVANTAGES
* International standard package
* Copper base plate
* Planar passivated chips
* Isolation voltage 3600 V~
* DC motor control
* Softstart AC motor controller
* Light, heat and temperature
control
* Space and weight savings
* Simple mounting with two screws
* Improved temperature and power
cycling
* Reduced protection circuits
STD/SDT18
Thyristor-Diode Modules, Diode-Thyristor Modules
Fig. 1 Surge overload current
ITSM: Crest value, t: duration
Fig. 2 i2dt versus time (1-10 ms)
Fig. 2a Maximum forward current
at case temperature
10
1: IGT, TVJ = 125 C
V
2: IGT, TVJ = 25 C
3: IGT, TVJ = -40 C
VG
3
2
1
5
6
1
4
4: PGAV = 0.5 W
5: PGM =
IGD, TVJ = 125 C
0.1
100
Fig. 3 Power dissipation versus on-state current and ambient temperature
(per thyristor)
101
5W
6: PGM = 10 W
102
103
IG
mA 104
Fig. 4 Gate trigger characteristics
1000
TVJ = 25 C
s
tgd
typ.
100
Limit
10
3 x STD/SDT18
1
10
mA
100
IG
Fig. 5 Three phase rectifier bridge: Power dissipation versus direct output current
and ambient temperature
Fig. 6 Gate trigger delay time
1000
STD/SDT18
Thyristor-Diode Modules, Diode-Thyristor Modules
Fig. 7 Three phase AC-controller:
Power dissipation versus RMS
output current and ambient
temperature
3 x STD/SDT18
STD/SDT18
Fig. 8 Transient thermal impedance
junction to case (per thyristor)
RthJC for various conduction angles d:
d
DC
o
180 C
o
120 C
o
60 C
o
30 C
RthJC (K/W)
1.3
1.35
1.39
1.42
1.45
Constants for ZthJC calculation:
i
1
2
3
STD/SDT18
Rthi (K/W)
ti (s)
0.018
0.041
1.241
0.0033
0.0216
0.191
Fig. 9 Transient thermal impedance
junction to heatsink (per thyristor)
RthJK for various conduction angles d:
d
DC
o
180 C
o
120 C
o
60 C
o
30 C
RthJK (K/W)
1.5
1.55
1.59
1.62
1.65
Constants for ZthJK calculation:
i
1
2
3
4
Rthi (K/W)
ti (s)
0.018
0.041
1.241
0.2
0.0033
0.0216
0.191
0.46