APA2N70K
RoHS-compliant Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ 100% Avalanche Test
D
▼ Fast Switching Characteristic
S
▼ Simple Drive Requirement
D
SOT-223
BVDSS
600V
RDS(ON)
10Ω
ID
0.35A
G
D
Description
Advanced Power MOSFETs from APEC provide the designer with the best
combination of fast switching,low on-resistance and cost-effectiveness.
G
S
The SOT-223 package is designed for suface mount application, larger
heatsink than SO-8 package.
Absolute Maximum Ratings
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TA=25℃
4
Continuous Drain Current, VGS @ 10V
1
IDM
Pulsed Drain Current
PD@TA=25℃
Total Power Dissipation
2
Rating
Units
600
V
+30
V
0.35
A
1.4
A
2.7
W
0.5
mJ
1
A
EAS
Single Pulse Avalanche Energy
IAR
Avalanche Current
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient
Data & specifications subject to change without notice
4
Value
Unit
45
℃/W
1
201201163
APA2N70K
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
Parameter
Test Conditions
Drain-Source Breakdown Voltage
Min.
Typ.
600
-
-
V
VGS=10V, ID=0.35A
-
-
10
Ω
VGS=0V, ID=1mA
3
Max. Units
RDS(ON)
Static Drain-Source On-Resistance
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
2
-
4
V
gfs
Forward Transconductance
VDS=10V, ID=0.2A
-
0.4
-
S
IDSS
Drain-Source Leakage Current
VDS=600V, VGS=0V
-
-
10
uA
Drain-Source Leakage Current (Tj=70 C) VDS=480V, VGS=0V
-
-
250
uA
Gate-Source Leakage
VGS=+30V, VDS=0V
-
-
+100
nA
ID=0.2A
-
5.5
-
nC
o
IGSS
3
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=540V
-
1.9
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
0.5
-
nC
VDS=300V
-
7.7
-
ns
3
td(on)
Turn-on Delay Time
tr
Rise Time
ID=0.2A
-
3.6
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
24
-
ns
tf
Fall Time
RD=1500Ω
-
44
-
ns
Ciss
Input Capacitance
VGS=0V
-
286
-
pF
Coss
Output Capacitance
VDS=25V
-
25
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
6
-
pF
Min.
Typ.
-
-
Source-Drain Diode
Symbol
VSD
Parameter
3
Forward On Voltage
Test Conditions
Tj=25℃, IS=0.2A, VGS=0V
Max. Units
1.2
V
Notes:
1.Pulse width limited by Max. junction temperature.
2.Starting Tj=25oC , VDD=50V , L=1mH , RG=25Ω , IAS=1A.
3.Pulse test
4.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec ; 120 ℃/W when mounted on Min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
APA2N70K
0.8
1
T A =25 o C
0.6
ID , Drain Current (A)
ID , Drain Current (A)
0.75
10V
5.0V
4.5V
T A =150 o C
10V
5.5V
5.0V
0.5
4.5V
0.4
V GS =4.0V
0.2
0.25
V GS =4.0V
0
0
0
3
6
9
12
0
V DS , Drain-to-Source Voltage (V)
6
12
18
24
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.8
1.2
I D =0.2A
V GS =10V
2.4
1.1
Normalized R DS(ON)
Normalized BVDSS (V)
2
1
1.6
1.2
0.8
0.9
0.4
0.8
0
-50
0
50
T j , Junction Temperature (
100
o
C)
Fig 3. Normalized BVDSS v.s. Junction
Temperature
150
-50
0
50
100
150
T j , Junction Temperature ( o C )
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
3
0.24
1.6
0.18
1.2
PD (W)
ID , Drain Current (A)
APA2N70K
0.12
0.8
0.4
0.06
0
0
25
50
75
100
T c , Case Temperature (
125
o
0
150
50
C)
100
Tc, Case Temperature (
Fig 5. Maximum Drain Current v.s.
150
o
C)
Fig 6. Typical Power Dissipation
Case Temperature
1
10
Normalized Thermal Response (R thja)
Duty Factor=0.5
1
Operation in this
area limited by
RDS(ON)
ID (A)
1ms
0.1
10ms
100ms
0.01
1S
T A =25 o C
Single Pulse
0.2
0.1
0.1
0.05
0.02
0.01
PDM
0.01
t
T
Single Pulse
Duty Factor = t/T
Peak Tj = P DM x Rthja+ Ta
Rthja = 120℃/W
DC
0.001
0.001
0.1
1
10
100
1000
V DS (V)
Fig 7. Maximum Safe Operating Area
10000
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 8. Effective Transient Thermal Impedance
4
APA2N70K
f=1.0MHz
1000
12
Ciss
I D =0.2A
V DS =540V
100
C (pF)
VGS , Gate to Source Voltage (V)
16
8
Coss
10
4
Crss
0
1
0
2
4
6
8
1
10
19
28
V DS (V)
Q G , Total Gate Charge (nC)
Fig 9. Gate Charge Characteristics
Fig 10. Typical Capacitance Characteristics
4
1
3.5
T j = 150 o C
VGS(th) (V)
IS (A)
0.1
T j = 25 o C
3
0.01
2.5
0.001
2
0
0.3
0.6
0.9
V SD (V)
Fig 11. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
150
o
T j , Junction Temperature ( C )
Fig 12. Gate Threshold Voltage v.s.
Junction Temperature
5
APA2N70K
VDS
90%
RD
VDS
D
0.44 x RATED
G
RG
TO THE
OSCILLOSCOPE
10%
+
S
10 V
VGS
VGS
-
td(on)
Fig 13. Switching Time Circuit
td(off) tf
tr
Fig 14. Switching Time Waveform
VG
VDS
10V
0.8 x RATED VDS
G
S
QG
TO THE
OSCILLOSCOPE
D
QGS
QGD
VGS
+
1~ 3 mA
IG
ID
Charge
Fig 15. Gate Charge Circuit
Q
Fig 16. Gate Charge Waveform
6