SSM2310GN
N-channel Enhancement-mode Power MOSFET
PRODUCT SUMMARY
BVDSS
60V
R DS(ON)
90mΩ
ID
3A
DESCRIPTION
The SSM2310GN acheives fast switching performance
with low gate charge without a complex drive circuit. It
is suitable for low voltage applications such as DC/DC
converters and general load-switching circuits.
The SSM2310GN is supplied in an RoHS-compliant
SOT-23-3 package, which is widely used for lower
power commercial and industrial surface mount
applications.
Pb-free; RoHS-compliant SOT-23-3
D
S
SOT-23-3
G
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS
Drain-source voltage
VGS
Gate-source voltage
ID
IDM
PD
Continuous drain current
Pulsed drain current
3
,
Value
Units
60
V
± 20
V
T A = 25°C
3
A
TA = 70°C
2.3
A
10
A
1.38
W
0.01
W/°C
1,2
3
Total power dissipation , TA = 25°C
Linear derating factor
TSTG
Storage temperature range
-55 to 150
°C
TJ
Operating junction temperature range
-55 to 150
°C
THERMAL CHARACTERISTICS
Symbol
RΘJA
Parameter
Maximum thermal resistance, junction-ambient
3
Value
Units
90
°C/W
Notes:
1.Pulse width must be limited to avoid exceeding the maximum junction temperature of 150°C.
2.Pulse width <300us, duty cycle <2%.
3.Mounted on a square inch of copper pad on FR4 board ; 270°C/W when mounted on the minimum pad area required for soldering.
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SSM2310GN
ELECTRICAL CHARACTERISTICS
Symbol
(at Tj = 25°C, unless otherwise specified)
Parameter
Test Conditions
Min.
Typ.
Max. Units
60
-
-
V
BVDSS
Drain-source breakdown voltage
VGS=0V, ID=250uA
∆ BV DSS/∆ Tj
Breakdown voltage temperature coefficient
Reference to 25°C, ID=1mA
-
0.05
-
V/°C
RDS(ON)
Static drain-source on-resistance
VGS=10V, ID=3A
-
-
90
mΩ
VGS=4.5V, ID=2A
-
-
120
mΩ
VDS=VGS, ID=250uA
1
-
3
V
VGS(th)
Gate threshold voltage
gfs
Forward transconductance
VDS=5V, ID=3A
-
5
-
S
IDSS
Drain-source leakage current
VDS=60V, VGS=0V
-
-
10
uA
VDS=48V ,VGS=0V, Tj = 70°C
-
-
25
uA
VGS=±20V
-
-
±100
nA
ID=3A
-
6
10
nC
IGSS
Gate-source leakage current
2
Qg
Total gate charge
Qgs
Gate-source charge
VDS=48V
-
1.6
-
nC
Qgd
Gate-drain ("Miller") charge
VGS=4.5V
-
3
-
nC
VDS=30V
-
6
-
ns
2
td(on)
Turn-on delay time
tr
Rise time
ID=1A
-
5
-
ns
td(off)
Turn-off delay time
RG=3.3Ω , VGS=10V
-
16
-
ns
tf
Fall time
RD=30Ω
-
3
-
ns
Ciss
Input capacitance
VGS=0V
-
490
780
pF
Coss
Output capacitance
VDS=25V
-
55
-
pF
Crss
Reverse transfer capacitance
f=1.0MHz
-
40
-
pF
Min.
Typ.
IS=1.2A, VGS=0V
-
-
1.2
V
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward voltage
trr
Reverse-recovery time
IS=3A, VGS=0V,
-
25
-
ns
Qrr
Reverse-recovery charge
dI/dt=100A/µs
-
26
-
nC
Notes:
1.Pulse width must be limited to avoid exceeding the maximum junction temperature of 150°C.
2.Pulse width <300us, duty cycle <2%.
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SSM2310GN
10
10
8
ID , Drain Current (A)
ID , Drain Current (A)
8
10V
7.0V
5.0V
4.5V
T A = 150 o C
10V
7.0V
5.0V
4.5V
o
T A =25 C
6
V G = 3.0 V
4
2
6
V G = 3.0 V
4
2
0
0
0
1
2
3
4
0
5
1
2
3
4
5
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical output characteristics
Fig 2. Typical output characteristics
105
2.0
ID=2A
99
ID=3A
V G =10V
1.8
o
T A =25 C
Normalized R DS(ON)
RDS(ON) (mΩ )
1.6
93
87
1.4
1.2
1.0
81
0.8
0.6
75
2
4
6
8
-50
10
0
50
100
150
T j , Junction Temperature ( o C)
V GS , Gate-to-Source Voltage (V)
Fig 3. On-resistance vs. gate voltage
Fig 4. Normalized on-resistance
vs. junction temperature
1.4
3
Normalized VGS(th) (V)
1.2
IS(A)
2
T j =150 o C
T j =25 o C
1
1.0
0.8
0.6
0.4
0
0
0.2
0.4
0.6
0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward characteristics of
the reverse diode
10/16/2005 Rev.3.1
1.2
-50
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 6. Gate threshold voltage vs.
junction temperature
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SSM2310GN
f=1.0MHz
1000
ID=3A
12
C iss
V DS = 30 V
V DS =38V
V DS =48V
10
C (pF)
VGS , Gate to Source Voltage (V)
14
8
100
6
C oss
C rss
4
2
10
0
0
3
6
9
12
1
15
5
Q G , Total Gate Charge (nC)
9
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Fig 7. Gate charge characteristics
Fig 8. Typical capacitance characteristics
1
100.000
Normalized Thermal Response (Rthja)
Duty factor=0.5
10.000
100us
1.000
ID (A)
1ms
10ms
0.100
100ms
1s
DC
T A =25 o C
Single Pulse
0.010
0.2
0.1
0.1
0.05
PDM
0.01
t
T
Single Pulse
0.01
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja = 270°C/W
0.001
0.0001
0.001
0.1
1
10
100
0.001
0.01
1
10
100
1000
t , Pulse Width (s)
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum safe operating area
0.1
1000
Fig 10. Effective transient thermal impedance
VG
VDS
90%
QG
4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching time waveform
10/16/2005 Rev.3.1
Charge
Q
Fig 12. Gate charge waveform
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SSM2310GN
PHYSICAL DIMENSIONS
SOT-23-3
SOT-23-3
SYMBOL MILLIMETERS
MIN.
MAX.
A
0.89
1.45
A1
0
0.15
A2
0.70
1.30
b
0.30
0.50
c
0.08
0.25
D
2.65
3.10
E
2.10
3.00
E1
1.19
2.30
e
0.95BSC
e1
1.90BSC
L
0.30
L1
Θ
0.60
0.60REF
0°
8°
*Dimensions do not include mold protrusions.
PART MARKING
PART NUMBER CODE: ND = SSM2310GN
NDXX
XX = DATE/LOT CODE
For a detailed explanation of these
codes, please contact SSC directly.
PACKING: Moisture sensitivity level MSL3
3000 pcs in antistatic tape on a reel packed in a moisture barrier bag (MBB).
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responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its
use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including
without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to
the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of
Silicon Standard Corporation or any third parties.
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