SSM9971GD
Dual N-channel Enhancement-mode Power MOSFETs
PRODUCT SUMMARY
BVDSS
60V
R DS(ON)
50mΩ
ID
5A
DESCRIPTION
The SSM9971GD acheives fast switching performance
with low gate charge without a complex drive circuit. It
is suitable for low voltage applications such as DC/DC
converters and general load-switching circuits.
The SSM2310GD is supplied in an RoHS-compliant
PDIP-8 package, which is widely used for medium power
commercial and industrial applications, where throughhole insertion into the board is required.
Pb-free; RoHS-compliant SO-8
D2
D2
D1
D1
G2
S2
PDIP-8
G1
S1
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS
Drain-source voltage
VGS
Gate-source voltage
ID
IDM
PD
Continuous drain current
Pulsed drain current
3
,
Value
Units
60
V
± 25
V
T A = 25°C
5
A
TA = 70°C
3.2
A
20
A
2
W
0.016
W/°C
1,2
3
Total power dissipation , TA = 25°C
Linear derating factor
TSTG
Storage temperature range
-55 to 150
°C
TJ
Operating junction temperature range
-55 to 150
°C
THERMAL CHARACTERISTICS
Symbol
RΘJA
Parameter
Maximum thermal resistance, junction-ambient
3
Value
Units
62.5
°C/W
Notes:
1.Pulse width must be limited to avoid exceeding the maximum junction temperature of 150°C.
2.Pulse width <300us, duty cycle <2%.
3.Mounted on a square inch of copper pad on FR4 board; 90°C/W when mounted on the minimum pad area required for soldering.
10/16/2005 Rev.3.1
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SSM9971GD
ELECTRICAL CHARACTERISTICS
Symbol
(at Tj = 25°C, unless otherwise specified)
Parameter
Test Conditions
Min.
Typ.
Max. Units
60
-
-
V
BVDSS
Drain-source breakdown voltage
VGS=0V, ID=250uA
∆ BV DSS/∆ Tj
Breakdown voltage temperature coefficient
Reference to 25°C, ID=1mA
-
0.06
-
V/°C
RDS(ON)
Static drain-source on-resistance2
VGS=10V, ID=5A
-
-
50
mΩ
VGS=4.5V, ID=2.5A
-
-
60
mΩ
VDS=VGS, ID=250uA
1
-
3
V
VGS(th)
Gate threshold voltage
gfs
Forward transconductance
VDS=10V, ID=5A
-
7
-
S
IDSS
Drain-source leakage current
VDS=60V, VGS=0V
-
-
1
uA
VDS=48V ,VGS=0V, Tj = 70°C
-
-
25
uA
VGS=±25V
-
-
±100
nA
ID=5A
-
32.5
-
nC
IGSS
Gate-source leakage current
2
Qg
Total gate charge
Qgs
Gate-source charge
VDS=48V
-
4.9
-
nC
Qgd
Gate-drain ("Miller") charge
VGS=10V
-
8.8
-
nC
VDS=30V
-
9.6
-
ns
2
td(on)
Turn-on delay time
tr
Rise time
ID=5A
-
10
-
ns
td(off)
Turn-off delay time
RG=3.3Ω , VGS=10V
-
30
-
ns
tf
Fall time
RD=6Ω
-
5.5
-
ns
Ciss
Input capacitance
VGS=0V
-
1560
-
pF
Coss
Output capacitance
VDS=25V
-
156
-
pF
Crss
Reverse transfer capacitance
f=1.0MHz
-
110
-
pF
Min.
Typ.
IS=1.6A, VGS=0V
-
-
1.2
V
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward voltage
trr
Reverse-recovery time
IS=5A, VGS=0V,
-
29.2
-
ns
Qrr
Reverse-recovery charge
dI/dt=100A/µs
-
48
-
nC
Notes:
1.Pulse width must be limited to avoid exceeding the maximum junction temperature of 150°C.
2.Pulse width <300us, duty cycle <2%.
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SSM9971GD
35
35
o
o
T A =25 C
25
20
15
10
V G =3.0V
25
20
15
V G =3.0V
10
5
5
0
0
0
1
2
3
4
5
0
1
V DS , Drain-to-Source Voltage (V)
2
3
4
5
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical output characteristics
Fig 2. Typical output characteristics
52
3.0
I D =5A
I D =5A
V G =10V
2.5
o
T A =25 C
Normalized R DS(ON)
48
RDS(ON) (mΩ )
10V
6.0V
4.5V
30
ID , Drain Current (A)
ID , Drain Current (A)
T A =150 C
10V
6.0V
4.5V
30
44
40
2.0
1.5
1.0
36
0.5
0.0
32
3
5
7
9
-50
11
0
50
100
150
T j , Junction Temperature ( o C)
V GS , Gate-to-Source Voltage (V)
Fig 3. On-resistance vs. gate voltage
Fig 4. Normalized on-resistance
vs. junction temperature
100
3
2.5
10
T j =25 o C
VGS(th) (V)
IS (A)
2
T j =150 o C
1
1.5
1
0.1
0.5
0
0.01
0.1
0.3
0.5
0.7
0.9
1.1
1.3
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward characteristic of
the reverse diode
10/16/2005 Rev.3.1
1.5
-50
0
50
100
150
o
T j ,Junction Temperature ( C)
Fig 6. Gate threshold voltage vs.
junction temperature
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SSM9971GD
f=1.0MHz
14
10000
I D =5A
VGS , Gate to Source Voltage (V)
12
V DS =48V
V DS =38V
V DS =30V
10
Ciss
1000
8
6
Coss
Crss
100
4
2
0
0
5
10
15
20
25
30
35
40
10
1
Q G , Total Gate Charge (nC)
Fig 7. Gate charge characteristics
5
9
13
17
21
V DS , Drain-to-Source Voltage (V)
25
29
Fig 8. Typical capacitance characteristics
1
100
Normalized Thermal Response (R θja)
Duty foctor=0.5
10
ID (A)
1ms
10ms
1
100ms
o
T A =25 C
Single Pulse
0.1
1s
DC
0.01
0.2
0.1
0.1
0.05
0.02
0.01
PDM
0.01
t
Single Pulse
T
Duty factor = t/T
Peak T j = PDM x Rthja + Ta
R θja=90°C/W
0.001
0.1
1
10
100
1000
0.0001
0.001
0.01
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum safe operating area
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 10. Effective transient thermal impedance
VG
VDS
90%
QG
10V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching time waveforms
10/16/2005 Rev.3.1
Charge
Q
Fig 12. Gate charge diagram
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SSM9971GD
PHYSICAL DIMENSIONS
D
E1
E
A2
A1
C
L
MIN
MAX
A1
0.38
—
A2
2.90
5.00
b
0.35
0.56
C
0.20
0.36
D
9.00
10.20
E
7.62
8.26
E1
6.09
7.20
e
E2
b
SYMBOL
e
2.54 (TYP)
E2
8.3
11.00
L
2.92
—
All dimensions in millimeters.
Dimensions do not include mold protrusions.
PART MARKING
PART NUMBER: 9971GD
XXXXXX
YWWSSS
DATE/LOT CODE: (YWWSSS)
Y = last digit of the year
WW = week
SSS = lot code sequence
PACKING: Moisture sensitivity level MSL1
50 pcs in antistatic tube, 20 tubes (1000 pieces) per box.
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responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its
use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including
without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to
the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of
Silicon Standard Corporation or any third parties.
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