SSC SSM9971GM

SSM9971GM
Dual N-channel Enhancement-mode Power MOSFETs
PRODUCT SUMMARY
BVDSS
60V
R DS(ON)
50mΩ
ID
5A
DESCRIPTION
The SSM9971GM acheives fast switching performance
with low gate charge without a complex drive circuit. It
is suitable for low voltage applications such as DC/DC
converters and general load-switching circuits.
The SSM2310GM is supplied in an RoHS-compliant
SO-8 package, which is widely used for medium power
commercial and industrial surface mount applications.
Pb-free; RoHS-compliant SO-8
D2
D2
D1
D1
G2
S2
SO-8
S1
G1
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS
Drain-source voltage
VGS
Gate-source voltage
ID
IDM
PD
Continuous drain current
Pulsed drain current
3
,
Value
Units
60
V
± 25
V
T A = 25°C
5
A
TA = 100°C
3.2
A
30
A
2
W
0.016
W/°C
1,2
3
Total power dissipation , TA = 25°C
Linear derating factor
TSTG
Storage temperature range
-55 to 150
°C
TJ
Operating junction temperature range
-55 to 150
°C
THERMAL CHARACTERISTICS
Symbol
RΘJA
Parameter
Maximum thermal resistance, junction-ambient
3
Value
Units
62.5
°C/W
Notes:
1.Pulse width must be limited to avoid exceeding the maximum junction temperature of 150°C.
2.Pulse width <300us, duty cycle <2%.
3.Mounted on a square inch of copper pad on FR4 board; 135°C/W when mounted on the minimum pad area required for soldering.
10/16/2005 Rev.3.1
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SSM9971GM
ELECTRICAL CHARACTERISTICS
Symbol
(at Tj = 25°C, unless otherwise specified)
Parameter
Test Conditions
Min.
Typ.
Max. Units
60
-
-
V
BVDSS
Drain-source breakdown voltage
VGS=0V, ID=250uA
∆ BV DSS/∆ Tj
Breakdown voltage temperature coefficient
Reference to 25°C, ID=1mA
-
0.06
-
V/°C
RDS(ON)
Static drain-source on-resistance2
VGS=10V, ID=5A
-
-
50
mΩ
VGS=4.5V, ID=2.5A
-
-
60
mΩ
VDS=VGS, ID=250uA
1
-
3
V
VGS(th)
Gate threshold voltage
gfs
Forward transconductance
VDS=10V, ID=5A
-
7
-
S
IDSS
Drain-source leakage current
VDS=60V, VGS=0V
-
-
1
uA
VDS=48V ,VGS=0V, Tj = 70°C
-
-
25
uA
VGS=±25V
-
-
±100
nA
ID=5A
-
32.5
-
nC
IGSS
Gate-source leakage current
2
Qg
Total gate charge
Qgs
Gate-source charge
VDS=48V
-
4.9
-
nC
Qgd
Gate-drain ("Miller") charge
VGS=10V
-
8.8
-
nC
VDS=30V
-
9.6
-
ns
2
td(on)
Turn-on delay time
tr
Rise time
ID=5A
-
10
-
ns
td(off)
Turn-off delay time
RG=3.3Ω , VGS=10V
-
30
-
ns
tf
Fall time
RD=6Ω
-
5.5
-
ns
Ciss
Input capacitance
VGS=0V
-
1658
-
pF
Coss
Output capacitance
VDS=25V
-
156
-
pF
Crss
Reverse transfer capacitance
f=1.0MHz
-
109
-
pF
Min.
Typ.
IS=1.6A, VGS=0V
-
-
1.2
V
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward voltage
trr
Reverse-recovery time
IS=5A, VGS=0V,
-
29.2
-
ns
Qrr
Reverse-recovery charge
dI/dt=100A/µs
-
48
-
nC
Notes:
1.Pulse width must be limited to avoid exceeding the maximum junction temperature of 150°C.
2.Pulse width <300us, duty cycle <2%.
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SSM9971GM
35
35
o
o
T A =25 C
25
20
15
10
V G =3.0V
25
20
15
V G =3.0V
10
5
5
0
0
0
1
2
3
4
5
0
1
V DS , Drain-to-Source Voltage (V)
2
3
4
5
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical output characteristics
Fig 2. Typical output characteristics
52
3.0
I D =5A
I D =5A
V G =10V
2.5
o
T A =25 C
Normalized R DS(ON)
48
RDS(ON) (mΩ )
10V
6.0V
4.5V
30
ID , Drain Current (A)
ID , Drain Current (A)
T A =150 C
10V
6.0V
4.5V
30
44
40
2.0
1.5
1.0
36
0.5
0.0
32
3
5
7
9
-50
11
0
50
100
150
T j , Junction Temperature ( o C)
V GS , Gate-to-Source Voltage (V)
Fig 3. On-resistance vs. gate voltage
Fig 4. Normalized on-resistance
vs. junction temperature
100
3
2.5
10
T j =25 o C
VGS(th) (V)
IS (A)
2
T j =150 o C
1
1.5
1
0.1
0.5
0
0.01
0.1
0.3
0.5
0.7
0.9
1.1
1.3
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward characteristic of
the reverse diode
10/16/2005 Rev.3.1
1.5
-50
0
50
100
150
o
T j ,Junction Temperature ( C)
Fig 6. Gate threshold voltage vs.
junction temperature
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SSM9971GM
f=1.0MHz
14
10000
I D =5A
VGS , Gate to Source Voltage (V)
12
V DS =48V
V DS =38V
V DS =30V
10
Ciss
1000
8
6
Coss
Crss
100
4
2
0
0
5
10
15
20
25
30
35
40
10
1
Q G , Total Gate Charge (nC)
Fig 7. Gate charge characteristics
5
9
13
17
21
V DS , Drain-to-Source Voltage (V)
25
29
Fig 8. Typical capacitance characteristics
1
100
Normalized Thermal Response (R θja)
Duty foctor=0.5
10
ID (A)
1ms
10ms
1
100ms
o
T A =25 C
Single Pulse
0.1
1s
DC
0.01
0.2
0.1
0.1
0.05
0.02
0.01
PDM
0.01
t
Single Pulse
T
Duty factor = t/T
Peak T j = PDM x Rthja + Ta
R θja=135°C/W
0.001
0.1
1
10
100
1000
0.0001
0.001
0.01
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum safe operating area
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 10. Effective transient thermal impedance
VG
VDS
90%
QG
10V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching time waveforms
10/16/2005 Rev.3.1
Charge
Q
Fig 12. Gate charge diagram
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SSM9971GM
PHYSICAL DIMENSIONS
D
SYMBOL
MIN
MAX
A
1.35
1.75
A1
0.10
0.25
B
0.33
0.51
C
0.19
0.25
D
4.80
5.00
E
3.80
4.00
H
E
e
e
A
A1
C
B
L
1.27(TYP)
H
5.80
6.50
L
0.38
1.27
All dimensions in millimeters.
Dimensions do not include mold protrusions.
PART MARKING
PART NUMBER: 9971GM
XXXXXX
YWWSSS
DATE/LOT CODE: (YWWSSS)
Y = last digit of the year
WW = week
SSS = lot code sequence
PACKING: Moisture sensitivity level MSL3
3000 pcs in antistatic tape on a 13 inch (330mm) reel, packed in a moisture barrier bag (MBB).
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