WTM1797 PNP EPITAXIAL PLANAR TRANSISTOR P b Lead(Pb)-Free 1. BASE 2. COLLECTOR 3. EMITTER FEATURES * Low saturation voltage * Excellent DC current gain characteristics * Complements to 2SC4672 1 2 3 SOT-89 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Parameter Symbol Value Units Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage VCEO -50 V Emitter-Base Voltage VEBO -6 V Collector Current -Continuous IC -2 A Collector Power dissipation PC 500 mW Junction Temperature TJ 150 ℃ Storage Temperature Tstg -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-50? A, IE=0 -50 - - V Collector-emitter breakdown voltage V(BR)CEO IC=-1mA, IB=0 -50 - - V Emitter-base breakdown voltage V(BR)EBO IE=-50? A, IC=0 -6 - - V Collector cut-off current ICBO VCB=-50V, IE=0 - - -0.1 ?A Emitter cut-off current IEBO VEB=-5V, IC=0 - - -0.1 ?A DC current gain hFE VCE=-2V, IC=-500mA 82 - 270 IC=-1A, IB=-50mA - - -0.35 V VCE=-2V, IC=-0.5A, f=100MHz - 200 - MHz VCB=-10V, IE=0, f=1MHz - 36 - pF Collector-emitter saturation voltage fT Transition frequency Collector output capacitance CLASSIFICATION OF Rank Range Marking WEITRON http://www.weitron.com.tw VCE(sat) Cob hFE P Q 82-180 120-270 AGP AGQ 1/3 14-Oct-08 WTM1797 Typical Characteristics WEITRON http://www.weitron.com.tw 2/3 14-Oct-08 WTM1797 SOT-89 Outline Dimensions unit:mm SOT-89 Dim E G A H C J B K A B C D E G H J K L D L WEITRON http://www.weitron.com.tw 3/3 Min Max 1.600 1.400 0.320 0.520 0.360 0.560 0.350 0.440 4.400 4.600 1.400 1.800 2.300 2.600 3.940 4.250 1.500TYP 3.100 2.900 14-Oct-08