WEITRON 2SD965 NPN Transistor COLLECTOR 2. P b Lead(Pb)-Free 1. EMITTER 2. COLLECTOR 3. BASE 3. BASE FEATURES : 1. EMITTER TO-92 * Flash unit of camera * Switching circuit MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Symbol VCBO VCEO VEBO IC PC TJ Tstg Storage Temperature Value 42 22 6 5 750 150 Units V V V A mW -55-150 ℃ ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=0.1mA, IE=0 42 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA, IB=0 22 V Emitter-base breakdown voltage V(BR)EBO IE= 10μA, IC=0 6 V Collector cut-off current ICBO VCB=30V,IE=0 0.1 μA Emitter cut-off current IEBO VEB=6V, IC=0 0.1 μA hFE(1) VCE=2V, IC= 0.15 mA 150 hFE(2) VCE= 2V,IC = 500 mA 340 hFE(3) VCE=2V, IC = 2A 150 DC current gain Collector-emitter saturation voltage Transition frequency CLASSIFICATION OF VCE(sat) fT 2000 IC=3000mA,IB=100 mA VCE=6V, IC=50mA,f=30MHz 0.35 150 R T V Range 340-600 560-950 900-2000 hpp://www.weitron.com.tw MHz hFE(2) Rank WEITRON V 1/2 01-Sep-09 2SD965 Ratings and Characteristic Curves WEITRON hpp://www.weitron.com.tw 2/2 01-Sep-09