2SC5354 NPN Plastic-Encapsulate Transistor 3 P b Lead(Pb)-Free 1 2 FEATURES * Excellent hFE Linearity 1. BASE 2. EMITTER 3. COLLECTOR * Low Noise SOT-23 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector- Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 150 mA Ib Base Current -Continuous 50 mA PC Collector Power Dissipation 0.2 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions Collector-base breakdown voltage V(BR)CBO IC=100 μA, IE=0 60 V Collector-emitter breakdown voltage V(BR)CEO IC= 10mA, I B=0 50 V Emitter-base breakdown voltage V(BR)EBO IE = 10μA, I C=0 5 V Collector cut-off current ICBO VCB=60V, IE=0 0.1 μA Emitter cut-off current IEBO VEB=5V, IC =0 0.1 μA DC current gain hFE(1) VCE=6V, IC= 2mA Collector-emitter saturation voltage V CE(sat) IC=100mA,IB=10mA Transition frequency fT VCE=10V, IC= 1mA Collector output capacitance Cob VCB=10V,IE=0,f=1MHz Noise figure NF MIN TYP 70 MAX 700 0.1 0.25 f=1KHZ,Rg=10KΩ V MHz 80 VCE=6V, I C= 0.1mA, UNIT 3.5 pF 10 dB CLASSIFICATION OF hFE Rank O Y G L Range 70 - 140 120 - 240 200 - 400 300 - 700 WEITRON http://www.weitron.com.tw 1/3 04-Oct-2010 2SC5354 Typical Characteristics WEITRON http://www.weitron.com.tw 2/3 04-Oct-2010 2SC5354 SOT-23 Package OutlineDimensions Unit:mm Dim A B C D E G H J K L M A B TOP V I EW E G C D H K J WEITRON http://www.weitron.com.tw L Min 0.35 1.19 2.10 0.85 0.46 1.70 2.70 0.01 0.89 0.30 0.076 Max 0.51 1.40 3.00 1.05 1.00 2.10 3.10 0.13 1.10 0.61 0.25 M 3/3 04-Oct-2010