SFP634 Silicon N-Channel MOSFET Features ■ 9A, 250V, RDS(on)(Max 0.45Ω)@VGS=10V ■ Ultra-low Gate Charge(Typical 41nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Maximum Junction Temperature Range(150℃) General Description Thi s Po w e r MOS F ET is pr o du ce d usi n g Wi n se m i ’ s adv an ce d planar stripe, DM OS technology. This latest technology has been especi al ly designed to minim ize on- state resistance, have a high ru gg e d ava l an ch e ch a ra cte r ist ic s. Thi s devi ce s is sp e cia l l y we ll s u i t e d fo r l o w v o l t a g e a p p l i c a t i o n s s u c h a s a u t o m o t i v e , h i g h efficiency switching for DC/DC converters, and DC motor control. Absolute Maximum Ratings Symbol VDSS Parameter Value Units 250 V Continuous Drain Current(@Tc=25℃) 9 A Continuous Drain Current(@Tc=100℃) 5 A 72 A ±20 V 300 mJ Drain Source Voltage ID IDM Drain Current Pulsed (Note1) VGS Gate to Source Voltage EAS Single Pulsed Avalanche Energy EAR Repetitive Avalanche Energy (Note 1) 7.4 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.8 V/ns 88 W 0.64 W/℃ -55~150 ℃ 300 ℃ (Note 2) Total Power Dissipation(@Tc=25℃) PD Derating Factor above 25℃ TJ, Tstg TL Junction and Storage Temperature Channel Temperature *Drain current limited by junction temperature Thermal Characteristics Symbol Parameter Value Min Typ Max Units RQJC Thermal Resistance, Junction-to-Case - - 1.42 ℃/W RQCS Thermal Resistance, Case-to-Sink - 0.5 - ℃/W RQJA Thermal Resistance, Junction-to-Ambient - - 62.5 ℃/W 1/7 . Copyright@WinSemi Semiconductor Co.,Ltd.,All rights reserved SFP634 C) Electrical Characteristics (Tc = 25 25°C) Characteristics Symbol Test Condition Min Type Max Unit IGSS VGS = ±20 V, VDS = 0 V - - ±100 nA V(BR)GSS IG = ±10 μA, VDS = 0 V ±20 - - V IDSS VDS = 200 V, VGS = 0 V - - 1 μA Drain−source breakdown voltage V(BR)DSS ID = 250 μA, VGS = 0 V 250 - - V Break Voltage Temperature ΔBVDSS/ ID=250μA, Referenced to 25℃ - 0.37 - V/℃ Gate leakage current Gate−source breakdown voltage Drain cut−off current Coefficient ΔTJ Gate threshold voltage VGS(th) VDS = 10 V, ID =250 μA 2 - 4 V Drain−source ON resistance RDS(ON) VGS = 10 V, ID = 5.1A - - 0.45 Ω Forward Transconductance gfs VDS = 50 V, ID = 5.1A 1.6 - - S Input capacitance Ciss VDS = 25 V, - 1220 - Crss VGS = 0 V, - 130 - Coss f = 1 MHz - 32 - VDD =125 V, - 9.6 - ton ID =5.6A - 21 - tf RG=12Ω - 42 - - 19 - - 41 51.8 - 6.5 - - 22 - Reverse transfer capacitance Output capacitance Rise time tr Turn−on time Switching time pF ns Fall time Turn−off time (Note4,5) toff Total gate charge (gate−source VDD = 200 V, Qg plus gate−drain) VGS = 10 V, nC Gate−source charge Qgs Gate−drain (“miller”) Charge Qgd ID = 5.6A (Note4,5) −Drain Ratings and Characteristics (Ta = 25 C) Source Source− 25°C) Characteristics Symbol Test Condition Min Type Max Unit Continuous drain reverse current IDR - - - 8.1 A Pulse drain reverse current IDRP - - - 32 A Forward voltage (diode) VDSF IDR = 8.1 A, VGS = 0 V - 1.4 2 V Reverse recovery time trr IDR = 5.6 A, VGS = 0 V, - 198 - ns Reverse recovery charge Qrr dIDR / dt = 100 A / μs - 1.2 2.4 μC Note 1.Repeativity rating :pulse width limited by junction temperature 2.L=500uH,IAS=9 A,VDD=50V,RG=0Ω,Starting TJ=25℃ 3.ISD≤9A,di/dt≤300A/us, VDD<BVDSS,STARTING TJ=25℃ 4.Pulse Test: Pulse Width≤300us,Duty Cycle≤2% 5.Essentially independent of operating temperature. This transistor is an electrostatic sensitive device Please handle with caution 2/7 . Copyright@WinSemi Semiconductor Co.,Ltd.,All rights reserved SFP634 3/7 . Copyright@WinSemi Semiconductor Co.,Ltd.,All rights reserved SFP634 4/7 . Copyright@WinSemi Semiconductor Co.,Ltd.,All rights reserved SFP634 Fig.10 Gate Test Circuit & Waveform Fig.11 Resistive Switching Test Circuit & Waveform Fig.12 Unclamped Inductive Switching Test Circuit & Waveform 5/7 . Copyright@WinSemi Semiconductor Co.,Ltd.,All rights reserved SFP634 Fig.13 Peak Diode Recovery dv/dt Test Circuit & Waveform 6/7 . Copyright@WinSemi Semiconductor Co.,Ltd.,All rights reserved SFP634 TO-220 Package Dimension Unit:mm 7/7 . Copyright@WinSemi Semiconductor Co.,Ltd.,All rights reserved