ARF460A ARF460B D G S TO-247 Common Source RF POWER MOSFETs N - CHANNEL ENHANCEMENT MODE 125V 150W 65MHz The ARF460A and ARF460B comprise a symmetric pair of common source RF power transistors designed for pushpull scientific, commercial, medical and industrial RF power amplifier applications up to 65 MHz. They have been optimized for both linear and high efficiency classes of operation. • Specified 125 Volt, 40.68 MHz Characteristics: • Output Power = 150 Watts. • Gain = 13dB (Class AB) • Efficiency = 75% (Class C) • Low Cost Common Source RF Package. • Low Vth thermal coefficient. • Low Thermal Resistance. • Optimized SOA for Superior Ruggedness. MAXIMUM RATINGS Symbol All Ratings: TC = 25°C unless otherwise specified. Parameter ARF460A/B VDSS Drain-Source Voltage 500 VDGO Drain-Gate Voltage 500 ID UNIT Volts Continuous Drain Current @ TC = 25°C 14 Amps VGS Gate-Source Voltage ±30 Volts PD Total Power Dissipation @ TC = 25°C 250 Watts Junction to Case 0.50 °C/W RθJC TJ,TSTG TL -55 to 150 Operating and Storage Junction Temperature Range °C 300 Lead Temperature: 0.063" from Case for 10 Sec. STATIC ELECTRICAL CHARACTERISTICS VDS(ON) IDSS IGSS MIN Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 µA) 500 On State Drain Voltage 1 TYP MAX Volts (I D(ON) = 7A, VGS = 10V) 4 Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) 25 µA Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C) 250 Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) gfs Forward Transconductance (VDS = 25V, ID = 7A) 3.3 VGS(TH) Gate Threshold Voltage (VDS = VGS, ID = 50mA) 3 ±100 nA 8 mhos 5 Volts 5.5 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com UNIT 7-2003 BVDSS Characteristic / Test Conditions 050-5966 Rev D Symbol DYNAMIC CHARACTERISTICS Symbol ARF460A/B Test Conditions Characteristic Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(on) Turn-on Delay Time tr td(off) tf MIN TYP MAX 1200 1400 VDS = 150V 150 300 f = 1 MHz 60 100 VGS = 15V 7 VDD = 0.5 VDSS 6 ID = ID[Cont.] @ 25°C 20 RG = 1.6Ω 4.4 VGS = 0V Rise Time Turn-off Delay Time Fall Time UNIT pF ns FUNCTIONAL CHARACTERISTICS Symbol GPS η ψ Characteristic Common Source Amplifier Power Gain Test Conditions MIN TYP f = 40.68 MHz 13 15 dB 70 75 % VGS = 0V Drain Efficiency Electrical Ruggedness VSWR 10:1 VDD = 125V Pout = 150W MAX UNIT No Degradation in Output Power 1 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2% APT Reserves the right to change, without notice, the specifications and information contained herein. 5000 30 Class C VDD = 150V 25 15 NOT UPDATED 10 CAPACITANCE (pf) 20 GAIN (dB) Ciss Pout = 150W 1000 Coss 500 Crss 100 50 5 60 75 90 105 120 FREQUENCY (MHz) Figure 1, Typical Gain vs Frequency ID, DRAIN CURRENT (AMPERES) 050-5966 Rev D 7-2003 16 12 10 .1 .5 1 5 10 50 150 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 2, Typical Capacitance vs. Drain-to-Source Voltage 45 56 TJ = -55°C VDS> ID (ON) x RDS (ON)MAX. 250µSEC. PULSE TEST @ <0.5 % DUTY CYCLE 8 4 TJ = +125°C TJ = -55°C TJ = +25°C 0 2 4 6 8 10 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) Figure 3, Typical Transfer Characteristics ID, DRAIN CURRENT (AMPERES) 0 30 OPERATION HERE LIMITED BY RDS (ON) 10 100uS 1mS 5 10mS 1 100mS .5 DC TC =+25°C TJ =+150°C SINGLE PULSE .1 1 5 10 50 100 500 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 4, Typical Maximum Safe Operating Area ARF460A/B 25 9V VGS=15 & 10V ID, DRAIN CURRENT (AMPERES) VGS(th), THRESHOLD VOLTAGE (NORMALIZED) 1.2 1.1 1.0 0.9 0.8 20 8V 15 7V 10 6V 5 0 0.7 -50 -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (°C) Figure 5, Typical Threshold Voltage vs Temperature 6.5V 5.5V 5V 4.5V 1 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 6, Typical Output Characteristics 0.50 0.9 0.40 0.7 0.30 0.5 Note: PDM 0.20 0.3 t1 t2 0 10-5 Duty Factor D = t1/t2 0.1 0.05 Peak TJ = PDM x ZθJC + TC SINGLE PULSE 10-4 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) Figure 9, Typical Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration 1.0 RC MODEL Junction temp. ( ”C) Power (Watts) 0.0284 0.00155F 0.165 0.00934F 0.307 0.128F Case temperature Figure 9a, TRANSIENT THERMAL IMPEDANCE MODEL Table 1 - Typical Class AB Large Signal Input - Output Impedance Freq. (MHz) 2.0 13.5 27 40 65 Zin (Ω) 20.9 - j 9.2 2.4 - j 6.8 .57 - j 2.6 .31 - j 0.5 .44 + j 1.9 ZOL (Ω) 38 - j 2.6 31 - j 14 19.6 - j 17.6 12.5 - j 15.8 6.0 - j 10.5 Zin - Gate shunted with 25Ω!! IDQ = 100mA ZOL - Conjugate of optimum load for 150 Watts output at Vdd = 125V 7-2003 0.10 050-5966 Rev D Z JC, THERMAL IMPEDANCE (°C/W) θ 0.60 ARF460A/B L4 Bias 0 - 12V + - L3 C6 RF Input + 125V - C8 C7 R1 C9 C2 C3 L1 L2 R2 C1 C5 C4 DUT 40.68 MHz Test Circuit C1 -- 2000 pF 100V NPO chip mounted at gate lead C2-C5 -- Arco 463 Mica trimmer C6-C8 -- .1 µF 500V ceramic chip C9 -- 2200 pF 500V chip RF L1 -- 4t #20 AWG .25"ID .3 "L ~80nH Output L2 -- 6t #16 AWG .312" ID .4"L ~185nH L3 -- 15t #24 AWG .25"ID ~.85uH L4 -- VK200-4B ferrite choke 3uH R1-R2 -- 51 Ohm 0.5W Carbon DUT = ARF460A/B TO-247 Package Outline Top View 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 15.49 (.610) 16.26 (.640) 6.15 (.242) BSC 5.38 (.212) 6.20 (.244) Source 20.80 (.819) 21.46 (.845) 3.55 (.138) 3.81 (.150) 4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 19.81 (.780) 20.32 (.800) 7-2003 1.01 (.040) 1.40 (.055) 050-5966 Rev D Dimensions in Millimeters and (Inches) NOTE: These two parts comprise a symmetric pair of RF power transistors and meet the same electrical specifications. The device pin-outs are the mirror image of each other to allow ease of use as a push-pull pair. 2.21 (.087) 2.59 (.102) Device ARF - A ARF - B Gate Drain Source Source Drain Gate 5.45 (.215) BSC 2-Plcs. APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.