AO4609 Complementary Enhancement Mode Field Effect Transistor General Description Features The AO4609 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. Standard Product AO4609 is Pb-free (meets ROHS & Sony 259 specifications). AO4609L is a Green Product ordering option. AO4609 and AO4609L are electrically identical. n-channel p-channel -30V VDS (V) = 30V ID = 8.5A (VGS=10V) -3A (VGS = -10V) RDS(ON) RDS(ON) < 18mΩ (VGS=10V) < 130mΩ (VGS = -10V) < 28mΩ (VGS=4.5V) < 180mΩ (VGS = -4.5V) < 260mΩ (VGS = -2.5V) D1 D2 S2 G2 S1 G1 8 7 6 5 1 2 3 4 D2 D2 D1 D1 G1 G2 S1 S2 SOIC-8 p-channel n-channel Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter Max n-channel VDS Drain-Source Voltage 30 VGS Gate-Source Voltage ±20 Continuous Drain Current A Pulsed Drain Current TA=25°C TA=70°C B TA=25°C Power Dissipation TA=70°C Junction and Storage Temperature Range ID IDM Thermal Characteristics: n-channel and p-channel Parameter t ≤ 10s Maximum Junction-to-Ambient A A Steady-State Maximum Junction-to-Ambient Steady-State Maximum Junction-to-Lead C A t ≤ 10s Maximum Junction-to-Ambient Steady-State Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Lead C 8.5 -3 6.6 -2.4 40 -6 A 2 2 1.28 -55 to 150 -55 to 150 Symbol RθJA RθJL RθJA RθJL Device n-ch n-ch n-ch Typ 48 74 35 p-ch p-ch p-ch 56 81 40 Units V V ±12 1.28 PD TJ, TSTG Max p-channel -30 W Max 62.5 110 40 °C Units °C/W °C/W °C/W 62.5 °C/W 110 °C/W 48 °C/W AO4609 N-Channel Electrical Characteristics (T J=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V 1 IGSS Gate-Body leakage current VDS=0V, VGS= ±20V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1 ID(ON) On state drain current VGS=10V, VDS=5V 40 TJ=55°C nA 3 V 15.5 18 22.3 27 VGS=4.5V, I D=6A 23 28 VDS=5V, ID=8.5A 23 TJ=125°C gFS Forward Transconductance VSD IS=1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge µA 100 Static Drain-Source On-Resistance Coss 5 1.8 VGS=10V, I D=8.5A Crss Units V VDS=24V, VGS=0V Zero Gate Voltage Drain Current IS Max 30 IDSS RDS(ON) Typ A VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=15V, I D=8.5A mΩ S 0.75 1040 mΩ 1 V 3 A 1250 pF 180 pF 110 pF 0.85 Ω 19.2 23 nC 9.36 11.2 nC 0.7 Qgs Gate Source Charge Qgd Gate Drain Charge 4.2 tD(on) Turn-On DelayTime 5.2 7.5 tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time 2.6 nC nC ns VGS=10V, VDS=15V, RL=1.8Ω, RGEN=3Ω 4.4 6.5 ns 17.3 25 ns 3.3 5 ns 16.7 21 6.7 10 ns nC trr Body Diode Reverse Recovery Time IF=8.5A, dI/dt=100A/µs Qrr Body Diode Reverse Recovery Charge IF=8.5A, dI/dt=100A/µs A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using 80µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. Rev 4 : Sept 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AO4609 N-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 2.00E+01 4V 10V 25 20 3.5V 1.20E+01 ID(A) ID (A) VDS=5V 1.60E+01 4.5V 15 125°C 8.00E+00 10 25°C VGS=3V 4.00E+00 5 0 0.00E+00 0 1 2 3 4 5 1.5 VDS (Volts) Fig 1: On-Region Characteristics 2.5 3 3.5 4 VGS(Volts) Figure 2: Transfer Characteristics 28 Normalized On-Resistance 1.6 26 VGS=4.5V 24 RDS(ON) (mΩ) 2 22 20 18 VGS=10V 16 14 VGS=10V ID=8.5A 1.4 VGS=4.5V 1.2 1 0.8 0 5 10 15 20 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+01 50 1.0E+00 ID=8.5A 1.0E-01 30 IS (A) RDS(ON) (mΩ) 40 125°C 125°C 1.0E-02 25°C 1.0E-03 20 25°C 1.0E-04 1.0E-05 10 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 VSD (Volts) Figure 6: Body-Diode Characteristics 1.0 AO4609 N-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1500 10 VDS=15V ID=8.5A 1250 Capacitance (pF) VGS (Volts) 8 6 4 2 Ciss 1000 750 500 Coss 250 0 0 4 8 12 16 Crss 0 20 0 5 Qg (nC) Figure 7: Gate-Charge Characteristics 50 RDS(ON) limited 100µs 1ms 10.0 0.1s 1s 1.0 TJ(Max)=150°C TA=25°C DC 10 100 20 VDS (Volts) D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=62.5°C/W 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) ZθJA Normalized Transient Thermal Resistance 30 30 0 0.001 0.1 10 25 10 10s 1 20 TJ(Max)=150°C TA=25°C 40 10µs 10ms 0.1 15 VDS (Volts) Figure 8: Capacitance Characteristics Power (W) ID (Amps) 100.0 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 T 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 100 1000 AO4609 P-Channel Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VGS(th) Gate Threshold Voltage On state drain current ID(ON) Conditions Min ID=-250µA, VGS=0V VDS=-24V, VGS=0V -30 VDS=0V, VGS=±12V VDS=VGS ID=-250µA VGS=-4.5V, VDS=-5V -0.6 gFS VSD IS Static Drain-Source On-Resistance Max Units V -1 -5 µA ±100 nA -1 -1.4 V 102 154 130 200 mΩ 128 180 mΩ 187 4.5 -0.85 260 mΩ -1 S V -2 A TJ=55°C -10 VGS=-10V, ID=-3A RDS(ON) Typ TJ=125°C VGS=-4.5V, ID=-2A VGS=-2.5V, ID=-1A Forward Transconductance VDS=-5V, ID=-3A Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current 3 A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=-15V, f=1MHz 409 55 42 pF pF pF VGS=0V, VDS=0V, f=1MHz 12 Ω SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime VGS=-4.5V, VDS=-15V, ID=-3A 4.4 0.8 1.32 nC nC nC 5.3 4.4 31.5 8 15.8 8 ns ns ns ns tr tD(off) tf trr Qrr Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time VGS=-10V, VDS=-15V, RL=5Ω, RGEN=3Ω IF=-3A, dI/dt=100A/µs Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=-3A, dI/dt=100A/µs ns nC A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max. 2 E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. Rev 4 : Sept 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AO4609 P-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 20 -5V -10V 8 -4V VGS=-3.5V 10 -ID(A) -ID (A) 15 25°C VDS=-5V -4.5V -3V 6 125°C 4 -2.5V 5 2 -2.0V 0 0 0 1 2 3 4 5 0 0.5 250 1.5 2 2.5 3 3.5 4 1.6 Normalized On-Resistance VGS=-2.5V 200 RDS(ON) (mΩ) 1 -VGS(Volts) Figure 2: Transfer Characteristics -VDS (Volts) Fig 1: On-Region Characteristics 150 VGS=-4.5V 100 VGS=-10V 50 VGS=-10V VGS=-4.5V 1.4 VGS=-2.5V 1.2 ID=-2A 1 0.8 0 1 2 3 4 5 6 0 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 300 1.0E+01 250 1.0E+00 ID=-2A 1.0E-01 200 -IS (A) RDS(ON) (mΩ) 125°C 1.0E-02 150 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL 1.0E-03 COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING 25°C PRODUCT DESIGN, OUT OF100 SUCH APPLICATIONS OR USES OF 25°C ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE 1.0E-04 FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 50 1.0E-05 125°C 1.0E-06 0 0 2 4 6 8 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 1.0 -VSD (Volts) Figure 6: Body-Diode Characteristics 1.2 AO4609 P-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 600 5 VDS=-15V ID=-3A 500 Capacitance (pF) -VGS (Volts) 4 3 2 1 Ciss 400 300 200 Coss 0 0 0 1 2 3 4 5 0 -Qg (nC) Figure 7: Gate-Charge Characteristics 5 10 15 20 25 30 -VDS (Volts) Figure 8: Capacitance Characteristics 100.0 20 TJ(Max)=150°C TA=25°C TJ(Max)=150°C TA=25°C 15 10.0 10µs RDS(ON) limited Power (W) -ID (Amps) Crss 100 100µs 1ms 10ms 0.1s 1.0 1s 10 5 10s DC 0.1 0.1 1 10 100 -VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) ZθJA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=62.5°C/W 0 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING PD OUT OF SUCH 0.1 APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd.