AOD4132 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD4132 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. This device is ideally suited for use as a low side switch in CPU core power conversion. Standard Product AOD4132 is Pb-free (meets ROHS & Sony 259 specifications). VDS (V) = 30V ID = 85A (VGS = 10V) RDS(ON) < 4mΩ (VGS = 10V) RDS(ON) < 6mΩ (VGS = 4.5V) UIS Tested Rg,Ciss,Coss,Crss Tested TO-252 D-PAK D Top View Drain Connected to Tab G S G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current B,G TC=25°C G Pulsed Drain Current Avalanche Current C C TC=25°C Power Dissipation B A V Junction and Storage Temperature Range 200 IAR 30 A 112 mJ EAR 100 W 50 2.5 W 1.6 TJ, TSTG -55 to 175 Symbol t ≤ 10s Steady-State Steady-State Alpha & Omega Semiconductor, Ltd. A 63 PDSM TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A A Maximum Junction-to-Ambient C Maximum Junction-to-Case ±20 ID IDM PD TC=100°C TA=25°C Power Dissipation Units V 85 TC=100°C B Repetitive avalanche energy L=0.1mH Maximum 30 RθJA RθJC Typ 14.2 39 0.8 °C Max 20 50 1.5 Units °C/W °C/W °C/W www.aosmd.com AOD4132 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V Gate-Body leakage current VDS=0V, VGS= ±20V Gate Threshold Voltage VDS=VGS ID=250µA 1 ID(ON) On state drain current VGS=10V, VDS=5V 85 VGS=10V, ID=20A TJ=125°C VGS=4.5V, ID=20A Forward Transconductance VSD IS=1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current IS VDS=5V, ID=20A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge V 100 nA 1.8 3 V 2.8 4 4.4 5.5 4.4 6 A mΩ mΩ 106 0.72 3700 VGS=0V, VDS=15V, f=1MHz µA 5 VGS(th) gFS Units 1 TJ=55°C Static Drain-Source On-Resistance Max 30 VDS=24V, VGS=0V IGSS RDS(ON) Typ S 1 V 85 A 4400 pF 700 pF 390 VGS=0V, VDS=0V, f=1MHz VGS=4.5V, VDS=15V, ID=20A pF 0.54 0.7 Ω 63 76 nC 33 40 nC Qgs Gate Source Charge 8.6 nC Qgd Gate Drain Charge 17.6 nC 12 ns tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω 15.5 ns 40 ns 14 ns trr Body Diode Reverse Recovery Time IF=20A, dI/dt=100A/µs 34 Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=100A/µs 30 41 ns nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power dissipation P DSM is based on steady-state R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature fo 175°C may be used if the PCB or heatsink allows it. B. The power dissipation P D is based on T J(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°C. D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. G. The maximum current rating is limited by the package current capability. Rev 0: Jan 2007 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOD4132 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 60 10V 50 50 VDS=5V 4.0V ID(A) ID (A) 40 40 30 3.5V 25°C 20 20 10 125°C 30 10 VGS=3V 0 0 0 1 2 3 4 1.5 5 2 3 3.5 4 4.5 VGS(Volts) Figure 2: Transfer Characteristics VDS (Volts) Fig 1: On-Region Characteristics 8 1.6 Normalized On-Resistance 7 RDS(ON) (mΩ) 2.5 VGS=4.5V 6 5 4 VGS=10V 3 ID=20A 1.4 VGS=10V VGS=4.5V 1.2 1 2 0 10 20 30 40 50 60 0.8 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 100 125 150 175 1.0E+02 8 1.0E+01 6 125°C 4 125°C 1.0E+00 IS (A) RDS(ON) (mΩ) 75 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature ID=20A 25°C 1.0E-01 25°C 1.0E-02 1.0E-03 2 1.0E-04 1.0E-05 0 2 4 6 8 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics www.aosmd.com AOD4132 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5000 10 VDS=15V ID=20A Ciss 4000 Capacitance (pF) VGS (Volts) 8 6 4 3000 2000 Coss 2 1000 0 0 Crss 0 10 20 30 40 50 60 70 0 5 Qg (nC) Figure 7: Gate-Charge Characteristics 20 25 30 100 RDS(ON) limited 100 10µs 1ms 100µs 10ms 0.1s 10 1s 60 40 10s TJ(Max)=150°C TA=25°C 1 TJ(Max)=150°C TA=25°C 80 Power (W) ID (Amps) 15 VDS (Volts) Figure 8: Capacitance Characteristics 1000 20 DC 0 0.1 0.1 1 10 0.01 100 Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=50°C/W 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F) VDS (Volts) ZθJA Normalized Transient Thermal Resistance 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD 0.01 Ton Single Pulse T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOD4132 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 120 TA=25°C 100 80 tA = 60 Power Dissipation (W) ID(A), Peak Avalanche Current 120 L ⋅ ID BV − VDD 40 20 TA=150°C 0 100 80 60 40 20 0 0.000001 0.00001 0.0001 0.001 0.01 Time in avalanche, t A (s) Figure 12: Single Pulse Avalanche capability 0 25 50 75 100 125 150 175 TCASE (°C) Figure 13: Power De-rating (Note B) 100 Current rating ID(A) 80 60 40 20 0 0 25 50 75 100 125 150 175 TCASE (°C) Figure 14: Current De-rating (Note B) Alpha & Omega Semiconductor, Ltd. www.aosmd.com