AOB440 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOB440 uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. This device is suitable for use in UPS, high current switching applications. Standard Product AOB440 is Pb-free (meets ROHS & Sony 259 specifications). VDS (V) = 60V ID = 75 A (V GS = 10V) RDS(ON) < 7.5mΩ (VGS = 10V) TO-263 D2-PAK D Top View Drain Connected to Tab G S G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage TC=25°C Continuous Drain CurrentG Units V ±20 V 75 TC=100°C Pulsed Drain Current Maximum 60 ID IDM C A 75 150 Avalanche Current C IAR 80 A Repetitive avalanche energy L=0.1mH C EAR 320 mJ TC=25°C Power Dissipation B TC=100°C Junction and Storage Temperature Range Maximum Junction-to-Ambient A t≤10s Maximum Junction-to-Ambient Maximum Junction-to-Case B A Steady-State Steady-State W 75 TJ, TSTG Thermal Characteristics Parameter Alpha & Omega Semiconductor, Ltd. 150 PD °C -55 to 175 Symbol RθJA Typ Max Units 8 12 °C/W RθJA RθJC 35 0.7 45 1 °C/W °C/W www.aosmd.com AOB440 Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions ID=250uA, VGS=0V Gate-Body leakage current VDS=0V, VGS=±20V Gate Threshold Voltage VDS=VGS, ID=250µA ID(ON) On state drain current VGS=10V, VDS=5V Static Drain-Source On-Resistance gFS VDS=5V, ID=30A Transconductance Diode Forward Voltage IS=1A, VGS=0V Maximum Body-Diode Continuous Current G TJ=125°C Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge 100 nA 4 V 6.3 7.5 10.5 13 A 90 0.7 3800 VGS=0V, VDS=30V, f=1MHz VGS=10V, VDS=30V, ID=30A mΩ 1 S V 55 A 4560 pF 430 pF 190 VGS=0V, VDS=0V, f=1MHz µA 3 150 DYNAMIC PARAMETERS Ciss Input Capacitance Coss 50 2 Units V 10 VGS=10V, ID=30A RDS(ON) Max 60 TJ=55°C IGSS VSD Typ VDS=60V, VGS=0V VGS(th) IS Min pF 1.5 2.3 Ω 68 88 nC 33 nC 15 nC Qgd Gate Drain Charge 19 nC tD(on) Turn-On DelayTime 18 ns tr Turn-On Rise Time 35 ns tD(off) Turn-Off DelayTime 44 ns tf Turn-Off Fall Time 23 ns trr Body Diode Reverse Recovery Time IF=30A, dI/dt=100A/µs 53 Qrr Body Diode Reverse Recovery Charge IF=30A, dI/dt=100A/µs 98 VGS=10V, VDS=30V, RL=1Ω, RGEN=3Ω 64 ns nC A: The value of R θJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation P D is based on T J(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°C. D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX)=175°C. G. The maximum current rating is limited by bond-wires. Rev1: May. 2008 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOB440 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 150 10V VDS=5V 6V 125 80 5V 100 ID(A) ID (A) 60 75 4.5V 40 125°C 50 25°C 20 25 VGS=4V -40°C 0 0 0 1 2 3 4 5 2 2.5 VDS (Volts) Figure 1: On-Region Characteristics 3.5 4 4.5 5 5.5 VGS(Volts) Figure 2: Transfer Characteristics 2.2 Normalized On-Resistance 7.2 7 RDS(ON) (mΩ) 3 6.8 VGS=10V 6.6 6.4 6.2 6 2 1.8 1.6 VGS=10V, 30A 1.4 1.2 1 0.8 0.6 0 20 40 60 80 100 -50 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage -25 0 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 100 25 ID=30A 10 1 15 IS (A) RDS(ON) (mΩ) 20 125°C 125°C 0.1 10 25°C 25°C 0.01 5 0.001 -40°C -40°C 0 0.0001 4 8 12 16 20 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics www.aosmd.com AOB440 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 6 10 VDS=30V ID=30A 5 Capacitance (nF) VGS (Volts) 8 6 4 2 Ciss 4 3 2 Crss 1 Coss 0 0 0 20 40 60 Qg (nC) Figure 7: Gate-Charge Characteristics 0 80 15 30 45 10000 1000 TJ(Max)=175°C TC=25°C RDS(ON) limited ID (A) 100µs 1ms 10 TJ(Max)=175°C TC=25°C DC Power (W) 10µs 100 1 100 0.00001 10 100 VDS (V) Figure 9: Maximun Forward Biased Safe Operating Area (Note F) 10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=1.0°C/W 1000 10ms 1 ZθJC Normalized Transient Thermal Resistance 60 VDS (Volts) Figure 8: Capacitance Characteristics 0.001 0.1 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 PD Ton 0.01 0.00001 Single Pulse 0.0001 0.001 0.01 T 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOB440 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 200 Current rating ID(A) Power Dissipation (W) 50 150 100 50 40 30 20 10 0 0 0 25 50 75 100 125 150 175 0 25 50 75 100 125 150 175 TCASE (°C) Figure 12: Current De-rating (Note B) TCASE (°C) Figure 13: Power De-rating (Note B) 150 ID(A), Peak Avalanche Current TA=25°C 125 100 75 TA=150°C 50 25 0 0.000001 0.00001 0.0001 0.001 Time in avalanche, t A (s) Figure 10: Single Pulse Avalanche capability Alpha & Omega Semiconductor, Ltd. www.aosmd.com