A-POWER AP60N03GP

AP60N03GS/P
Pb Free Plating Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low On-Resistance
D
▼ Fast Switching
▼ Simple Drive Requirement
BVDSS
30V
RDS(ON)
13.5mΩ
ID
G
55A
S
Description
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
GD
The TO-263 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage
applications such as DC/DC converters. The through-hole version
(AP60N03GP) is available for low-profile applications.
S
G
D
TO-263(S)
TO-220(P)
Absolute Maximum Ratings
Parameter
Symbol
Rating
Units
VDS
Drain-Source Voltage
30
V
VGS
Gate-Source Voltage
±20
V
[email protected]=25℃
Continuous Drain Current, V GS @ 10V
55
A
[email protected]=100℃
Continuous Drain Current, V GS @ 10V
35
A
215
A
1
IDM
Pulsed Drain Current
[email protected]=25℃
Total Power Dissipation
62.5
W
Linear Derating Factor
0.5
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Value
Units
Rthj-c
Thermal Resistance Junction-case
Max.
2.0
℃/W
Rthj-a
Thermal Resistance Junction-ambient
Max.
62
℃/W
Data & specifications subject to change without notice
201221041
AP60N03GS/P
o
Electrical [email protected]=25 C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Typ.
Max. Units
30
-
-
V
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
-
0.037
-
V/℃
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=28A
-
11.5
13.5
mΩ
VGS=4.5V, ID=22A
-
18
20
mΩ
VDS=VGS, ID=250uA
1
-
3
V
VDS=10V, ID=28A
-
30
-
S
VDS=30V, VGS=0V
-
-
1
uA
Drain-Source Leakage Current (Tj=150 C)
VDS=24V, VGS=0V
-
-
25
uA
Gate-Source Forward Leakage
VGS=±20V
-
-
±100
nA
ID=28A
-
22.4
-
nC
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
VGS=0V, ID=250uA
Min.
o
IDSS
Drain-Source Leakage Current (Tj=25 C)
o
IGSS
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=24V
-
2.7
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=5V
-
14
-
nC
2
td(on)
Turn-on Delay Time
VDS=15V
-
7.4
-
ns
tr
Rise Time
ID=28A
-
81
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
24
-
ns
tf
Fall Time
RD=0.53Ω
-
18
-
ns
Ciss
Input Capacitance
VGS=0V
-
950
-
pF
Coss
Output Capacitance
VDS=25V
-
440
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
145
-
pF
Min.
Typ.
-
-
55
A
-
-
215
A
-
-
1.3
V
Source-Drain Diode
Symbol
IS
ISM
VSD
Parameter
Test Conditions
VD=VG=0V , VS=1.3V
Continuous Source Current ( Body Diode )
1
Pulsed Source Current ( Body Diode )
Forward On Voltage
2
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.
Tj=25℃, IS=55A, VGS=0V
Max. Units
AP60N03GS/P
200
150
o
T C =150 o C
10V
8.0V
150
ID , Drain Current (A)
ID , Drain Current (A)
T C =25 C
6.0V
100
50
100
6.0V
50
V G =4.0V
V G =4.0V
0
0
0
2
4
6
8
0
2
4
6
8
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
20
1.6
18
I D = 28 A
I D =28A
V G =10V
1.4
T C =25 o C
Normalized R DS(ON)
RDS(ON) (mΩ )
10V
8.0V
16
14
1.2
1
0.8
12
0.6
10
2
4
6
8
10
-50
V GS , Gate-to-Source Voltage (V)
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
3
100
10
2
o
o
T j =25 C
VGS(th) (V)
IS (A)
T j =150 C
1
1
0.1
0
0.01
0
0.2
0.4
0.6
0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
150
AP60N03GS/P
f=1.0MHz
14
10000
I D = 28 A
10
V DS =16V
V DS =20V
V DS =24V
8
C (pF)
VGS , Gate to Source Voltage (V)
12
C iss
1000
6
C oss
4
2
C rss
100
0
0
5
10
15
20
25
30
35
1
40
5
9
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
Normalized Thermal Response (Rthjc)
1000
100
ID (A)
10us
100us
1ms
10
o
T c =25 C
Single Pulse
10ms
100ms
1
Duty factor=0.5
0.2
0.1
0.1
0.05
0.02
PDM
0.01
t
Single Pulse
T
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
0.01
1
10
100
0.00001
0.0001
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
VDS
0.001
0.01
0.1
1
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
90%
QG
5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Fig 12. Gate Charge Waveform
Q