A-POWER AP9T19GJ

AP9T19GH/J
Pb Free Plating Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low Gate Charge
D
▼ Capable of 2.5V gate drive
▼ Single Drive Requirement
BVDSS
12V
RDS(ON)
16mΩ
ID
G
33A
S
Description
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
G
G
D
D
S
TO-252(H)
S
TO-251(J)
Rating
Units
Absolute Maximum Ratings
Symbol
Parameter
VDS
Drain-Source Voltage
12
V
VGS
Gate-Source Voltage
±12
V
[email protected]=25℃
Continuous Drain Current, V GS @ 4.5V
33
A
[email protected]=100℃
Continuous Drain Current, V GS @ 4.5V
21
A
80
A
1
IDM
Pulsed Drain Current
[email protected]=25℃
Total Power Dissipation
25
W
Linear Derating Factor
0.2
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Value
Units
Rthj-c
Thermal Resistance Junction-case
Max.
5
℃/W
Rthj-a
Thermal Resistance Junction-ambient
Max.
110
℃/W
Data and specifications subject to change without notice
201026041
AP9T19GH/J
Electrical [email protected]=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Typ.
Max. Units
12
-
-
V
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
-
0.01
-
V/℃
RDS(ON)
Static Drain-Source On-Resistance
VGS=4.5V, ID=20A
-
-
16
mΩ
VGS=2.5V, ID=10A
-
-
24
mΩ
Gate Threshold Voltage
VDS=VGS, ID=250uA
-
-
1.2
V
gfs
Forward Transconductance
VDS=5V, ID=20A
-
25
-
S
IDSS
Drain-Source Leakage Current (Tj=25oC)
VDS=12V, VGS=0V
-
-
1
uA
Drain-Source Leakage Current (Tj=150oC)
VDS=10V ,VGS=0V
-
-
25
uA
Gate-Source Leakage
VGS=±12V
-
-
±100
nA
ID=20A
-
18
28
nC
VGS(th)
IGSS
2
VGS=0V, ID=250uA
Min.
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=10V
-
2
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
9
-
nC
2
td(on)
Turn-on Delay Time
VDS=10V
-
12
-
ns
tr
Rise Time
ID=20A
-
85
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=5V
-
24
-
ns
tf
Fall Time
RD=0.5Ω
-
90
-
ns
Ciss
Input Capacitance
VGS=0V
-
905
1450
pF
Coss
Output Capacitance
VDS=12V
-
690
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
600
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1.3
-
Ω
Min.
Typ.
-
-
Source-Drain Diode
Symbol
VSD
Parameter
Forward On Voltage
2
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.
Test Conditions
IS=20A, VGS=0V
Max. Units
1.3
V
AP9T19GH/J
70
70
o
T C =25 C
o
5.0V
4.5V
3.5V
2.5V
50
T C = 150 C
60
5.0V
4.5V
3.5V
50
ID , Drain Current (A)
ID , Drain Current (A)
60
40
30
20
V G =1.5V
10
40
2.5V
30
20
V G =1.5V
10
0
0
0
1
2
3
4
5
0
1
Fig 1. Typical Output Characteristics
3
4
5
Fig 2. Typical Output Characteristics
1.6
24
I D = 10 A
o
I D = 20 A
V G =4.5V
1.4
Normalized R DS(ON)
T C =25 C
20
RDS(ON) (mΩ )
2
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
16
1.2
1.0
0.8
0.6
12
1
2
3
4
-50
5
V GS , Gate-to-Source Voltage (V)
0
50
100
150
T j , Junction Temperature ( o C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
10
2.0
Normalized VGS(th) (V)
8
IS(A)
6
T j =150 o C
T j =25 o C
4
1.5
1.0
0.5
2
0.0
0
0
0.2
0.4
0.6
0.8
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1
-50
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
AP9T19GH/J
f=1.0MHz
14
10000
V DS =6V
V DS =8V
V DS =10V
10
C (pF)
VGS , Gate to Source Voltage (V)
I D =20A
12
8
C iss
1000
6
C oss
C rss
4
2
0
100
0
10
20
30
40
1
5
9
13
17
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
Normalized Thermal Response (Rthjc)
100
ID (A)
100us
1ms
10
10ms
100ms
DC
T c =25 o C
Single Pulse
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
0.02
t
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
Single Pulse
0.01
1
0.1
1
10
100
0.00001
0.0001
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.001
0.01
0.1
1
10
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off)tf
Fig 11. Switching Time Waveform
Charge
Fig 12. Gate Charge Waveform
Q