A-POWER AP6679GI

AP6679GI
Pb Free Plating Product
Advanced Power
Electronics Corp.
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low Gate Charge
D
▼ Single Drive Requirement
▼ Lower On-resistance
G
▼ RoHS Compliant
BVDSS
-30V
RDS(ON)
9mΩ
ID
-48A
S
Description
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
G D
S
TO-220CFM(I)
The TO-220CFM isolation package is universally preferred for all
commercial-industrial through hole applications.
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
-30
V
VGS
Gate-Source Voltage
±25
V
[email protected]=25℃
Continuous Drain Current, VGS @ 10V
-48
A
[email protected]=100℃
Continuous Drain Current, VGS @ 10V
-30
A
1
IDM
Pulsed Drain Current
300
A
[email protected]=25℃
Total Power Dissipation
31.3
W
Linear Derating Factor
0.25
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Value
Units
Rthj-c
Thermal Resistance Junction-case
Max.
4
℃/W
Rthj-a
Thermal Resistance Junction-ambient
Max.
62
℃/W
Data and specifications subject to change without notice
200525051-1/4
AP6679GI
Electrical [email protected]=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
-30
-
-
V
-
-0.02
-
V/℃
VGS=-10V, ID=-30A
-
-
9
mΩ
VGS=-4.5V, ID=-24A
-
-
15
mΩ
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-1
-
-3
V
gfs
Forward Transconductance
VDS=-10V, ID=-30A
-
43
-
S
IDSS
Drain-Source Leakage Current (Tj=25oC)
VDS=-30V, VGS=0V
-
-
-1
uA
Drain-Source Leakage Current (Tj=150 C)
VDS=-24V, VGS=0V
-
-
-25
uA
Gate-Source Leakage
VGS= ±25
-
-
±100
nA
ID=-30A
-
40
67
nC
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA
RDS(ON)
VGS(th)
Static Drain-Source On-Resistance
o
IGSS
2
VGS=0V, ID=-250uA
2
Max. Units
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=-25V
-
8
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
28
-
nC
VDS=-15V
-
15
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=-30A
-
75
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=-10V
-
50
-
ns
tf
Fall Time
RD=0.5Ω
-
90
-
ns
Ciss
Input Capacitance
VGS=0V
-
3100 4590
pF
Coss
Output Capacitance
VDS=-25V
-
930
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
690
-
pF
Rg
Gate Resistance
f=1.0MHz
-
2.7
4
Ω
Min.
Typ.
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
IS=-30A, VGS=0V
-
-
-1.3
V
trr
Reverse Recovery Time
IS=-24A, VGS=0V,
-
47
-
ns
Qrr
Reverse Recovery Charge
dI/dt=-100A/µs
-
45
-
nC
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.
2/4
AP6679GI
280
150
-ID , Drain Current (A)
-ID , Drain Current (A)
-10V
-8.0V
T C =150 o C
-10V
-8.0V
T C =25 o C
210
-6.0V
140
-4.5V
-6.0V
100
-4.5V
50
V G =-3.0V
70
V G =-3.0V
0
0
0
1
2
3
0.0
4
1.0
1.5
2.0
2.5
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
35
1.8
I D =-30A
V G =-10V
Normalized RDS(ON)
I D = -24A
T C =25 ℃
RDS(ON) (mΩ )
0.5
-V DS , Drain-to-Source Voltage (V)
25
15
1.4
1.0
0.6
5
2
4
6
8
-50
10
0
50
100
150
T j , Junction Temperature ( o C)
-V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
30
Normalized -VGS(th) (V)
1.6
20
-IS(A)
T j =150 o C
T j =25 o C
10
0
1.2
0.8
0.4
0
0.2
0.4
0.6
0.8
1
1.2
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3/4
AP6679GI
f=1.0MHz
10000
I D = -30A
V DS = -25V
C iss
12
C (pF)
-VGS , Gate to Source Voltage (V)
16
8
1000
C oss
C rss
4
0
100
0
20
40
60
80
1
5
9
13
17
21
25
29
-V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1000
Normalized Thermal Response (Rthjc)
1
100
-ID (A)
100us
1ms
10
10ms
o
T C =25 C
Single Pulse
100ms
DC
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
t
T
0.02
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
0.01
Single Pulse
0.01
1
0.1
1
10
100
0.00001
0.0001
-V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
VDS
90%
0.001
0.01
0.1
1
10
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
QG
-4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4/4