A-POWER AP03N70H-H

AP03N70H/J-H
Pb Free Plating Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Repetitive Avalanche Rated
D
▼ Fast Switching Speed
▼ Simple Drive Requirement
G
▼ RoHS Compliant
BVDSS
700V
RDS(ON)
4.4Ω
ID
2.5A
S
Description
The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for AC/DC
converters. The through-hole version (AP03N70J) is available for lowprofile applications.
G
D
S
G
DS
TO-252(H)
TO-251(J)
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
700
V
VGS
Gate-Source Voltage
±30
V
[email protected]=25℃
Continuous Drain Current, VGS @ 10V
2.5
A
[email protected]=100℃
Continuous Drain Current, VGS @ 10V
1.6
A
8
A
54.3
W
0.44
W/℃
1
IDM
Pulsed Drain Current
[email protected]=25℃
Total Power Dissipation
Linear Derating Factor
2
EAS
Single Pulse Avalanche Energy
31
mJ
IAR
Avalanche Current
2.5
A
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Value
Units
Rthj-c
Symbol
Thermal Resistance Junction-case
Max.
2.3
℃/W
Rthj-a
Thermal Resistance Junction-ambient
Max.
110
℃/W
Parameter
Data & specifications subject to change without notice
200417062-1/4
AP03N70H/J-H
Electrical [email protected]=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
700
-
-
V
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
-
0.6
-
V/℃
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=1.6A
-
-
4.4
Ω
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
2
-
4
V
gfs
Forward Transconductance
VDS=10V, ID=1.6A
-
2
-
S
VDS=600V, VGS=0V
-
-
10
uA
Drain-Source Leakage Current (Tj=150 C)
VDS=480V, VGS=0V
-
-
100
uA
Gate-Source Leakage
VGS=±30V
-
-
±100
nA
ID=1A
-
12
20
nC
o
IDSS
Drain-Source Leakage Current (Tj=25 C)
o
IGSS
3
VGS=0V, ID=1mA
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=480V
-
3
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
4
-
nC
VDD=300V
-
8.5
-
ns
3
td(on)
Turn-on Delay Time
tr
Rise Time
ID=2.5A
-
6
-
ns
td(off)
Turn-off Delay Time
RG=10Ω,VGS=10V
-
19
-
ns
tf
Fall Time
RD=120Ω
-
8
-
ns
Ciss
Input Capacitance
VGS=0V
-
590
950
pF
Coss
Output Capacitance
VDS=25V
-
50
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
6
-
pF
Rg
Gate Resistance
f=1.0MHz
-
3.4
5.1
Ω
Min.
Typ.
IS=2.5A, VGS=0V
-
-
1.5
V
IS=2.5A, VGS=0V,
-
407
-
ns
dI/dt=100A/µs
-
2110
-
nC
Source-Drain Diode
Symbol
VSD
Parameter
3
Forward On Voltage
2
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Test Conditions
Max. Units
Notes:
1.Pulse width limited by safe operating area.
2.Starting Tj=25oC , VDD=50V , L=10mH , RG=25Ω , IAS=2.5A.
3.Pulse width <300us , duty cycle <2%.
2/4
AP03N70H/J-H
4
3
10V
6.0V
o
T C =25 C
o
10V
5.0V
T C =150 C
2
ID , Drain Current (A)
ID , Drain Current (A)
3
2
5.0V
1
4.5V
2
4.5V
1
4.0V
1
V G =3.5V
V G =4.0V
0
0
0
5
10
15
20
25
0
Fig 1. Typical Output Characteristics
15
20
25
3.0
I D =2.5A
V G =10V
Normalized RDS(ON)
1.1
Normalized BVDSS (V)
10
Fig 2. Typical Output Characteristics
1.2
1.0
2.0
1.0
0.9
0.8
0.0
-50
0
50
100
150
-50
0
50
100
150
T j , Junction Temperature ( o C)
T j , Junction Temperature ( o C)
Fig 3. Normalized BVDSS v.s. Junction
Fig 4. Normalized On-Resistance
Temperature
v.s. Junction Temperature
5
10
4
VGS(th) (V)
100
T j = 150 o C
IS (A)
5
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
T j = 25 o C
1
3
2
0.1
1
0.01
0.1
0.3
0.5
0.7
0.9
1.1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.3
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3/4
AP03N70H/J-H
f=1.0MHz
10000
I D =1A
V DS =480V
12
C iss
C (pF)
VGS , Gate to Source Voltage (V)
16
8
100
C oss
4
C rss
0
1
0
5
10
15
1
5
9
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
Normalized Thermal Response (Rthjc)
10
100us
1
ID (A)
1ms
10ms
100ms
DC
0.1
o
T c =25 C
Single Pulse
DUTY=0.5
0.2
0.1
0.05
0.1
0.02
PDM
0.01
t
T
Single Pulse
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
0.01
0.01
1
10
100
1000
10000
0.00001
0.0001
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.001
0.01
0.1
1
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
10V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4/4