@vic MMBT2907ALT1 SOT-23 Plastic-Encapsulate Transistors MMBT2907ALT1 SOT-23 TRANSISTOR (PNP) 1. BASE 2. EMITTER 3. COLLECTOR FEATURES W (Tamb=25℃) 2. 4 1. 3 0. 95 0. 4 2. 9 Collector current -0.6 A ICM: Collector-base voltage -60 V V(BR)CBO: Operating and storage junction temperature range 0. 95 0.3 1. 9 PCM: 1. 0 Power dissipation Unit: mm TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Symbol unless otherwise specified) Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic= -10µA , IE=0 -60 V Collector-emitter breakdown voltage V(BR)CEO IC= -10 mA , IB=0 -60 V Emitter-base breakdown voltage V(BR)EBO IE= -10µA, IC=0 -5 V Collector cut-off current ICBO VCB= -50V, IE=0 -0.1 µA Collector cut-off current ICEO VCB= -3V, IB=0 -0.1 µA Emitter cut-off current IEBO VEB= -3V, IC=0 -0.1 µA hFE(1) VCE=-10V, IC= -150mA 100 hFE(2) VCE=-10V, IC= -1mA 50 Collector-emitter saturation voltage VCE(sat) IC=-500mA, IB=-50 mA -1 V Base-emitter saturation voltage VBE(sat) IC= -500mA, IB=-50 mA -2 V 300 DC current gain VCE=-20V, IC= -50mA Transition frequency fT 200 MHz f = 100MHz DEVICE MARKING: MMBT2907ALT1 =2F Copyright @vic Electronics Corp. Website http://www.avictek.com