@vic AV1959 TO-92 Plastic-Encapsulate Transistors AV1959 TRANSISTOR（ NPN ） FEATURES Power dissipation PCM : 0.5 W（Tamb=25℃） Collector current ICM : 0.5 A Collector-base voltage V(BR)CBO : 35 V Operating and storage junction temperature range Tstg: -55℃ to +150℃ Tj : 150℃ TO—92 1. EMITTER 2.COLLECTOR 3.BSAE 1 2 3 ELECTRICAL CHARACTERISTICS（Tamb=25℃ unless otherwise specified） Symbol Test conditions MIN Collector-base breakdown voltage V(BR)CBO Ic= 100 μA， IE=0 35 V Collector-emitter breakdown voltage V(BR)CEO Ic= 0. 1 mA， IB=0 30 V Emitter-base breakdown voltage V(BR)EBO IE= 100 μA， IC=0 5 V Collector cut-off current ICBO VCB=35 V , IE=0 0.1 μA Emitter cut-off current IEBO VEB= 5 V， IC=0 0.1 μA HFE(1) VCE=1V, HFE(2) VCE= 6V, IC= 400mA Collector-emitter saturation voltage VCE(sat) IC= 100mA, IB=10mA 0.25 V Base-emitter voltage VBE VCE=1V, IC=100mA 1.0 V Transition frequency fT Parameter IC=0 70 TYP MAX UNIT 400 DC current gain VCE= 6 V, IC= 20mA 25 200 MHz CLASSIFICATION OF HFE Rank O Y GR HFE(1) 70-140 120-240 200-400 HFE(2) 25(min) 40(min) Range Copyright © Avic Electronics Corp. 1 Website: http://www.avictek.com @vic Copyright © Avic Electronics Corp. AV1959 2 Website: http://www.avictek.com @vic Copyright © Avic Electronics Corp. AV1959 3 Website: http://www.avictek.com