BCDSEMI AP2126

Data Sheet
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR
General Description
Features
The AP2126 is a 300mA, positive Voltage regulator
ICs fabricated by CMOS process.
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·
·
Each of AP2126 is equipped with a voltage reference,
an error amplifier, a resistor network for setting output
voltage, a chip enable circuit, a current limit circuit and
OSTD (over temperature shut down) circuit to prevent
the IC from over current and over temperature.
·
·
·
·
·
·
The AP2126 has features of high ripple rejection, low
dropout voltage, low noise, high output voltage
accuracy, and low current consumption which make it
ideal for use in various battery-powered apparatus.
·
·
·
AP2126 has 3.3V fixed voltage version. It is available
in SOT-23-5 Package.
AP2126
Low Dropout Voltage: [email protected]
High Output Voltage Accuracy: ±2%
High Ripple Rejection:
65dB@ f=1kHz, 45dB@ f=10kHz
Low Standby Current: 0.1µA
Low Quiescent Current: 60µA Typical
Low Output Noise: 60µVrms
Short Current Limit: 50mA
Over Temperature Protection
Compatible with Low ESR Ceramic Capacitor:
1µF for CIN and COUT
Excellent Line/Load Regulation
Soft Start Time: 50µs
Auto Discharge Resistance: RDS(ON)=60Ω
Applications
·
·
·
Datacom
Notebook Computers
Mother Board
SOT-23-5
Figure 1. Package Type of AP2126
Jun. 2008 Rev. 1.1
BCD Semiconductor Manufacturing Limited
1
Data Sheet
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR
AP2126
Pin Configuration
K Package
(SOT-23-5)
Shutdown
1
GND
2
VIN
3
5
NC
4
VOUT
Figure 2. Pin Configuration of AP2126 (Top View)
Functional Block Diagram
UVLO &
Shutdown
Logic
SHUTDOWN
VIN
Foldback
Current Limit
Thermal
Shutdown
VOUT
3MΩ
NC
VREF
GND
Figure 3. Functional Block Diagram of AP2126
Jun. 2008 Rev. 1.1
BCD Semiconductor Manufacturing Limited
2
Data Sheet
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR
AP2126
Ordering Information
AP2126
G1: Green
Circuit Type
TR: Tape and Reel
Package
3.3: Fixed Output 3.3V
K: SOT-23-5
Product
Package
Temperature
Range
AP2126
SOT-23-5
-40 to 85oC
Part Number
Marking ID
Green
AP2126K-3.3TRG1
Green
FEF
Packing Type
Tape & Reel
BCD Semiconductor's products, as designated with "G1" suffix in the part number, are RoHS compliant and Green.
Jun. 2008 Rev. 1. 1
BCD Semiconductor Manufacturing Limited
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Data Sheet
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR
AP2126
Absolute Maximum Ratings (Note 1)
Parameter
Symbol
Value
Unit
Input Voltage
VIN
6.5
V
Shutdown Input Voltage
VCE
-0.3 to VIN+0.3
V
Output Current
IOUT
450
mA
TJ
150
oC
TSTG
-65 to 150
oC
TLEAD
260
Thermal Resistance
RθJA
250
oC/W
ESD (Human Body Model)
ESD
6000
V
ESD (Machine Model)
ESD
300
V
Junction Temperature
Storage Temperature Range
Lead Temperature (Soldering, 10sec)
o
C
Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device.
These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated
under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods
may affect device reliability.
Recommended Operating Conditions
Parameter
Symbol
Min
Max
Unit
Input Voltage
VIN
-
6
V
TJ
-40
85
oC
Operating Junction Temperature Range
Jun. 2008 Rev. 1.1
BCD Semiconductor Manufacturing Limited
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Data Sheet
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR
AP2126
Electrical Characteristics (Continued)
(AP2126-3.3V, CIN=1µF, COUT=1µF, Bold typeface applies over -40oC≤TJ≤85oC, unless otherwise specified.)
Parameter
Output Voltage
Input Voltage
Maximum Output Current
Symbol
VOUT
Conditions
Min
VIN=VOUT+1V
1mA≤IOUT≤300mA
Typ
98%*
VOUT
VIN
IOUT(MAX)
Max
Unit
102%*
VOUT
V
6
V
450
mA
Load Regulation
∆VOUT
/(∆IOUT*VOUT)
VIN-VOUT=1V,
1mA≤IOUT≤300mA
0.6
%/A
Line Regulation
∆VOUT
/(∆VIN*VOUT)
VOUT+0.5V≤VIN≤6V
IOUT=30mA
0.06
%/V
Dropout Voltage
VDROP
VOUT=3.3V, IOUT=300mA
170
300
mV
IQ
VIN=VOUT+1V, IOUT=0mA
60
90
µA
VIN=VOUT+1V,
VSHUTDOWN in off mode
0.1
1.0
µA
Quiescent Current
Standby Current
Power Supply
Rejection Ratio
Output Voltage
Temperature Coefficient
ISTD
PSRR
(∆VOUT/VOUT)
/∆T
Ripple 1Vp-p
VIN=VOUT+1V
f=100Hz
65
dB
f=1KHz
65
dB
f=10KHz
45
dB
±100
ppm/oC
IOUT=30mA, -40oC≤TJ≤85oC
Output Current Limit
ILIMIT
VIN-VOUT=1V,
VOUT=0.98*VOUT
400
mA
Short Current Limit
ISHORT
VOUT=0V
50
mA
50
µs
60
µVrms
Soft Start Time
RMS Output Noise
tUP
VNOISE
TA=25oC, 10Hz ≤f≤100kHz
Shutdown "High" Voltage
Shutdown input voltage "High"
1.5
6
V
Shutdown "Low" Voltage
Shutdown input voltage "Low"
0
0.4
V
VOUT Discharge MOSFET
RDS(ON)
Shutdown input voltage "Low"
60
Ω
3
MΩ
Thermal Shutdown
165
oC
Thermal Shutdown Hysteresis
30
Shutdown Pull Down Resistance
Jun. 2008 Rev. 1. 1
o
C
BCD Semiconductor Manufacturing Limited
5
Data Sheet
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR
AP2126
Typical Performance Characteristics
240
3.5
3.0
T C=-40 C
200
T C=25 C
o
o
Dropout Voltage (mV)
180
2.5
Output Voltage (V)
220
2.0
1.5
o
TC=-40 C
o
TC=25 C
1.0
140
120
100
80
60
40
o
TC=85 C
20
VIN=4.3V
0.5
o
T C=125 C
160
0
50
0.0
0.1
0.2
0.3
0.4
100
Figure 4. Output Voltage vs. Output Current
250
300
Figure 5. Dropout Voltage vs. Output Current, VOUT=3.3V
70
120
115
IOUT=0
68
o
110
TC=-40 C
105
TC=25 C
100
TC=85 C
95
VIN=4.3V, VOUT=3.3V
o
VIN=4.3V, VOUT=3.3V
66
o
Quiescent Current (µA)
Quiescent Current (µA)
200
Output Current (mA)
Output Current (A)
90
85
80
75
70
65
60
64
62
60
58
56
54
52
55
50
150
0.5
0
50
100
150
200
250
50
-40
300
-20
0
20
40
60
80
100
120
o
Case Temperature ( C)
Output Current (mA)
Figure 7. Quiescent Current vs. Case Temperature
Figure 6. Quiescent Current vs. Output Current
Jun. 2008 Rev. 1.1
BCD Semiconductor Manufacturing Limited
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Data Sheet
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR
AP2126
Typical Performance Characteristics (Continued)
80
3.295
IOUT=10mA
3.294
70
CIN=COUT=1µF, VIN=4.3V
3.293
3.292
Output Voltage (V)
Quiescent Current (µA)
60
50
40
30
o
TC=-40 C
o
20
TC=25 C
3.291
3.290
3.289
3.288
3.287
3.286
o
TC=85 C
10
0
IOUT=0
0
1
2
3
4
3.285
5
3.284
-40
6
-20
0
20
Input Voltage (V)
120
3.0
38
Output Voltage (V)
36
Short Current (mA)
100
3.5
40
34
32
30
28
26
24
22
20
2.5
2.0
1.5
1.0
IOUT=0
IOUT=300mA
0.5
18
16
-40
80
Figure 9. Output Voltage vs. Case Temperature
CIN=COUT=1µF, VIN=4.3V
42
60
o
Figure 8. Quiescent Current vs. Input Voltage
44
40
Case Temperature ( C)
-20
0
20
40
60
80
100
0.0
120
o
TC=25 C
0
1
2
3
4
5
6
Input Voltage (V)
o
Case Temperature ( C)
Figure 10. Short Current vs. Case Temperature
Figure 11. Output Voltage vs. Input Voltage
Jun. 2008 Rev. 1. 1
BCD Semiconductor Manufacturing Limited
7
Data Sheet
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR
AP2126
Typical Performance Characteristics (Continued)
2.0
VOUT=3.3V
1.8
No heatsink
Power Dissipation (W)
1.6
IOUT
1.4
1.2
1.0
0.8
VOUT
0.6
0.4
0.2
0.0
-40
-20
0
20
40
60
80
100
120
o
Case Temperature( C)
Figure 13. Load Transient
Figure 12. Power Dissipation vs. Case Temperature
(Conditions: CIN=COUT=1µF, VIN=4.4V, VOUT=3.3V)
VIN
VOUT
VShutdown
VOUT
Figure 14. Line Transient
Figure 15. Soft Start Time
(Conditions: IOUT=30mA, CIN=COUT=1µF,
(Conditions: IOUT=0mA, CIN=COUT=1µF,
VIN=4 to 5V, VOUT=3.3V)
VShutdown=0 to 2V, VOUT=3.3V)
Jun. 2008 Rev. 1.1
BCD Semiconductor Manufacturing Limited
8
Data Sheet
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR
AP2126
Typical Performance Characteristics (Continued)
100
IOUT=10mA
90
IOUT=300mA
80
ripple=1Vpp, COUT=1µF, VOUT=3.3V
PSRR (dB)
70
60
50
40
30
20
10
0
100
1000
10000
100000
Frequency (Hz)
Figure 16. PSRR vs. Frequency
Jun. 2008 Rev. 1. 1
BCD Semiconductor Manufacturing Limited
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Data Sheet
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR
AP2126
Typical Application
VIN
VOUT
VIN
VOUT
AP2126
Shutdown
CIN
1µF
COUT
1µF
GND
VOUT=3.3V
Figure 17. Typical Application of AP2126
Jun. 2008 Rev. 1.1
BCD Semiconductor Manufacturing Limited
10
Data Sheet
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR
AP2126
Mechanical Dimensions
SOT-23-5
Unit: mm(inch)
0.300(0.012)
0.600(0.024)
1.500(0.059)
1.700(0.067)
0.100(0.004)
0.200(0.008)
2.950(0.116)
2.650(0.104)
2.820(0.111)
3.020(0.119)
0.200(0.008)
0.700(0.028)
REF
0.300(0.012)
0.400(0.016)
0°
8°
1.800(0.071)
2.000(0.079)
1.250(0.049)
1.050(0.041)
0.950(0.037)
TYP
0.000(0.000)
0.100(0.004)
1.050(0.041)
1.150(0.045)
Jun. 2008 Rev. 1. 1
BCD Semiconductor Manufacturing Limited
11
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