MICROSEMI LX5503E

LX5503E
®
TM
InGaP HBT 4 – 6GHz Power Amplifier
P RODUCTION D ATA S HEET
KEY FEATURES
DESCRIPTION
For +18dBm OFDM output power
(64QAM, 54Mbps), the PA provides a
very low EVM (Error Vector Magnitude) of 3%, and consumes 150mA
total DC current.
The LX5503E is available in a 16pin 3x3mm2 micro-lead package
(MLP). The compact footprint, low
profile, and excellent thermal capability
of the micro-lead package make the
LX5503E an ideal solution for
broadband, medium-gain power amplifier requirements for IEEE 802.11a,
and HiperLAN2 portable WLAN
applications.
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
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Advanced InGaP HBT
4.9-5.85GHz Operation
Single-Polarity 3.3V Supply
Total Current ~ 150mA for
Pout=18dBm at 5.25GHz
P1dB ~ +26dBm across
4.9~5.85GHz
Power Gain ~ 21dB at 5.25GHz
& Pout=18dBm
Power Gain ~ 16dB at 5.85GHz
& Pout=18dBm
EVM ~ 3% for 64QAM/ 54Mbps
& Pout=18dBm
Excellent Temperature
Performance
Simple Input/Output Match
Minimal External Components
Optional low-cost LDO for
Optimal System Performance
2
Small Footprint: 3x3mm
Low Profile: 0.9mm
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The LX5503E is a power amplifier
optimized for high-efficiency lowpower applications in the FCC
Unlicensed National Information
Infrastructure (U-NII) band, Europe
HyperLAN2, and Japan WLAN in the
4.9-5.85GHz frequency range. The
PA is implemented as a two-stage
monolithic microwave integrated
circuit (MMIC) with active bias and
input/output pre-matching. The device
is manufactured with an InGaP/GaAs
Heterojunction Bipolar Transistor
(HBT) IC process (MOCVD). It
operates at a single supply of 3.3V
with +26dBm of P1dB, and power
gain of 21dB between 4.9-5.35GHz
and 16dB up to 5.85GHz.
APPLICATIONS/BENEFITS
ƒ FCC-UNII Wireless
ƒ IEEE 802.11a
ƒ HiperLAN2
PRODUCT HIGHLIGHT
PACKAGE ORDER INFO
Plastic MLPQ
16-Pin
LX5503ELQ
LX5503E
LQ
RoHS Compliant / Pb-free Transition DC: 0418
Note: Available in Tape & Reel. Append the letters “TR” to the
part number.
(i.e. LX5503ELQ-TR)
This device is classified as ESD Level 0 in accordance with
JESD22-A114-B, (HBM) testing. Appropriate ESD procedures
should be observed when handling this device.
Copyright © 2000
Rev. 1.2d, 2005-08-18
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 1
LX5503E
®
TM
InGaP HBT 4 – 6GHz Power Amplifier
P RODUCTION D ATA S HEET
ABSOLUTE MAXIMUM RATINGS
PACKAGE PIN OUT
13 14 15 16
12
1
11
2
10
3
9
4
Peak Package Solder Reflow Temp. (40 seconds maximum exposure) ........ 260°C (+0, -5)
Note: Exceeding these ratings could cause damage to the device. All voltages are with respect to
Ground. Currents are positive into, negative out of specified terminal.
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DC Supply Voltage, RF off ...............................................................................6V
Collector Current ........................................................................................500mA
Total Power Dissipation....................................................................................3W
RF Input Power........................................................................................... 10dBm
Operation Ambient Temperature .......................................................-40 to +85°C
Maximum Junction Temperature (TJMAX) .................................................... 150°C
Storage Temperature.......................................................................... -65 to 150°C
8
7
6
5
LQ PACKAGE
(Bottom View)
RoHS / Pb-free 100% Matte Tin Lead Finish
FUNCTIONAL PIN DESCRIPTION
Name
Pin #
Description
RF IN
2, 3
RF input for the power amplifier. This pin is DC-shorted to GND but AC-coupled to the transistor base
of the first stage.
VB1
6
Bias current control voltage for the first stage.
VB2
7
Bias current control voltage for the second stage. The VB2 pin can be connected with VB1 into a single
reference voltage (Vref) through an external resistor bridge.
VCC
9
Supply voltage for the Bias reference and control circuits. This pin can be combined with both VC1 and
VC2 pins, resulting in a single supply voltage (referred to as Vc).
RF OUT
10, 11
VC1
15
Power supply for first stage amplifier. The VC1 feedline should be terminated with a 220pF bypass
capacitor as close to the device as possible, followed by a 1µF bypass capacitor at the supply side.
This pin can be combined with VC2 and VCC pins, resulting in a single supply voltage (Vc).
VC2
14
Power supply for second stage amplifier. The VC2 feedline should be terminated with a 220pF bypass
capacitor as close to the device as possible, followed by a 1µF bypass capacitor at the supply side.
This pin can be combined with VC1 and VCC, resulting in a single supply voltage (Vc).
GND
Center
Metal
The center metal base of the MLPQ package provides both DC/RF ground as well as heat sink for the
power amplifier.
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 2
PACKAGE DATA
Copyright © 2000
Rev. 1.2d, 2005-08-18
RF output for the power amplifier. This pin is AC-coupled and does not require a DC-blocking
capacitor.
LX5503E
InGaP HBT 4 – 6GHz Power Amplifier
®
TM
P RODUCTION D ATA S HEET
PARAMETER
CONDITION
Frequency Range
Output Power at 1dB Compression
Power Gain at Pout=18dBm
EVM at Pout=18dBm
SYMBOL
MIN.
f
4.9
Pout
25
Bias Control Reference Current
For Icq=100mA
Small-Signal Gain
Gain Flatness
Over 200MHz
Gain Variation Over Temperature
-40 to +85 C
o
Input Return Loss
MIN.
5.35
5.7
26
25
TYP.
MAX.
5.85
UNIT
GHz
dBm
21
16
dB
3
3
%
Ic_total
150
160
mA
Gp
Quiescent Current
MAX.
26
64QAM/54Mbps
Total Current at Pout=18dBm
TYP.
Icq
100
100
mA
Iref
1.5
1.5
mA
S21
19
15
dB
ΔS21
+/-0.5
+/-0.5
dB
ΔS21
S11
+/-1
-15
+/-1
-10
-12
dB
-10
dB
Output Return Loss
S22
-7
-8
dB
Reverse Isolation
S12
-35
-35
dB
Second Harmonic
Pout = 18dBm
-40
-35
dBc
Third Harmonic
Pout = 18dBm
-45
-45
dBc
Ramp-On Time
10~90%
100
100
ns
tON
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ELECTRICAL CHARACTERISTICS
Unless otherwise specified, the following specifications apply over the following test conditions: Vcc = 3.3V, Icq = 100mA,
TA = 25°C
ELECTRICALS
Copyright © 2000
Rev. 1.2d, 2005-08-18
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 3
LX5503E
InGaP HBT 4 – 6GHz Power Amplifier
®
TM
P RODUCTION D ATA S HEET
10
200
190
EVM
Ictotal
8
180
7
170
6
160
5
150
4
140
3
130
2
120
1
110
0
Ictotal (mA)
9
EVM (%)
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CHARACTERISTIC CURVES
Typical EVM & Total Current vs. Output Power
(Vc=3.3V, Icq=100mA, 64QAM/54Mbps)
Freq=4.97GHz
(EVM Test Set Limited to >4.97GHz)
100
8
9
10
11
12
13
14
15
16
17
18
19
20
21
Pout (dBm)
10
200
180
7
170
6
160
5
150
4
140
3
130
2
120
1
110
0
Ictotal (mA)
EVM (%)
190
EVM
Ictotal
8
Freq=5.25GHz
Ictotal (mA)
9
Freq=5.85GHz
100
8
9
10
11
12
13
14
15
16
17
18
19
20
21
Pout (dBm)
12
220
11
EVM (%)
210
EVM
Ictotal
10
200
9
190
8
180
7
170
6
160
5
150
4
140
3
130
2
120
1
110
100
8
9
10
11
12
13
14
15
16
17
18
19
20
21
Pout (dBm)
Notes: All EVM data are for OFDM signal of 64QAM/54Mbps and are actual measured data without any de-embedding. Source EVM from is
around 1.4~1.8% for the input power levels for test.
Copyright © 2000
Rev. 1.2d, 2005-08-18
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 4
GRAPHS
0
LX5503E
TM
®
InGaP HBT 4 – 6GHz Power Amplifier
P RODUCTION D ATA S HEET
WWW . Microsemi .C OM
CHARACTERISTIC CURVES
Typical Power Sweep Data at Room Temperature
(Vc=3.3V, Icq=100mA)
Freq=4.97GHz
Freq=5.25GHz
Freq=5.85GHz
GRAPHS
Copyright © 2000
Rev. 1.2d, 2005-08-18
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 5
LX5503E
InGaP HBT 4 – 6GHz Power Amplifier
®
TM
P RODUCTION D ATA S HEET
CHARACTERISTIC CURVES
WWW . Microsemi .C OM
Typical P1dB vs. Supply Voltage
(Vc=3.3V, Icq=100mA, Freq=5.25GHz)
Typical EVM vs. Frequency
(Vc=3.3V, Icq=100mA, Pout=18dBm, 64QAM/54Mbps)
28
4
EVM
27.5
3.75
27
P1dB (dBm)
EVM (%)
3.5
3.25
3
26.5
26
25.5
25
2.75
24.5
2.5
4.85
4.95
5.05
5.15
5.25
5.35
5.45
5.55
5.65
5.75
24
5.85
3
3.2
3.4
Frequency (GHz)
3.6
3.8
4
Vc (V)
Typical Small-Signal Gain vs. Supply Voltage
(Vc=3.3V, Icq=100mA, Freq=5.25GHz)
Typical P1dB vs. Frequency
(Vc=3.3V, Icq=100mA)
21
27
20.75
[email protected] (dB)
P1dB (dBm)
26.5
26
25.5
25
20.5
20.25
24.5
24
4.85
4.95
5.05
5.15
5.25
5.35
5.45
5.55
5.65
5.75
20
5.85
3
3.2
3.4
dB(S (1,2)) dB(S (2,2))
dB(S (1,1)) dB(S (2,1))
S21 (dB)
4.4
4.6
4.8
5.0
5.2
5.4
5.6
5.8
24
23
22
21
20
19
18
17
16
15
14
13
12
11
10
6.0
--40oC
-20
- oC
0oC
25oC
85oC
4.0
4.2
4.4
4.6
4.8
5.0
5.2
5.4
5.6
5.8
6.0
fre q, GHz
freq, GHz
Copyright © 2000
Rev. 1.2d, 2005-08-18
4
GRAPHS
25
20
15
10
5
0
-5
-10
-15
-20
-25
-30
-35
-40
-45
4.2
3.8
Typical Small-Signal Gain Variation Over Temperature
(Vc=3.3V, Icq=100mA at Room Temperature)
Typical S-Parameter Data at Room Temperature
(Vc=3.3V, Icq=100mA)
4.0
3.6
Vc (V)
Frequency (GHz)
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 6
LX5503E
InGaP HBT 4 – 6GHz Power Amplifier
®
TM
P RODUCTION D ATA S HEET
CHARACTERISTIC CURVES
WWW . Microsemi .C OM
Typical EVM Variation Over Temperature
(Vc=3.3V, Icq=100mA at Room Temperature, Pout=18dBm, Freq=5.25GHz)
10
-40oC
-25oC
0oC
25oC
50oC
85oC
9
8
EVM (%)
7
6
5
4
3
2
1
0
13
14
15
16
17
18
19
20
21
Pout (dBm)
Typical ACPR Variation Over Temperature
(Vc=3.3V, Icq=100mA at Room Temperature, Pout=18dBm, Freq=5.25GHz)
[email protected] (dBc)
-40
-40oC
-25oC
0oC
25oC
50oC
85oC
-45
-50
-55
GRAPHS
-60
13
14
15
16
17
18
19
20
21
Pout (dBm)
Copyright © 2000
Rev. 1.2d, 2005-08-18
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 7
LX5503E
InGaP HBT 4 – 6GHz Power Amplifier
®
TM
P RODUCTION D ATA S HEET
PACKAGE DIMENSIONS
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LQ
16-Pin MLPQ 3x3
D
b
E2
L
D2
E
or
e
K
A
A1
or
Pin 1 Indicator
A3
Or
Dim
A
A1
A3
b
D
E
e
D2
E2
K
L
L1
MILLIMETERS
MIN
MAX
0.80
1.00
0
0.05
0.20 REF
0.18
0.30
3.00 BSC
3.00 BSC
0.50 BSC
1.30
1.55
1.30
1.55
0.2
0.35
0.50
0.15
INCHES
MIN
MAX
0.031
0.039
0
0.002
0.008 REF
0.007
0.012
0.118 BSC
0.118 BSC
0.020 BSC
0.051
0.061
0.051
0.061
0.008
0.012
0.020
0.006
Note:
1.
D
E2
b
L
2.
Dimensions do not include mold flash or
protrusions; these shall not exceed 0.155mm(.006”)
on any side. Lead dimension shall not include
solder coverage.
Due to multiple qualified assembly sub-contractors
either package (with different pin one indicators)
may be shipped. Package type will be consistent
within the smallest individual container.
D2
E
L1
e
A1
A
K
MECHANICALS
Copyright © 2000
Rev. 1.2d, 2005-08-18
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 8
LX5503E
TM
®
InGaP HBT 4 – 6GHz Power Amplifier
P RODUCTION D ATA S HEET
NOTES
WWW . Microsemi .C OM
NOTES
PRODUCTION DATA – Information contained in this document is proprietary to Microsemi and is
current as of application date. This document may not be modified in any way without the express
written consent of Microsemi. Product processing does not necessarily include testing of all
parameters. Microsemi reserves the right to change the configuration and performance of the product
and to discontinue product at any time.
Copyright © 2000
Rev. 1.2d, 2005-08-18
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 9