CEPF634/CEBF634 CEIF634/CEFF634 N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEPF634 250V 0.45Ω 8.1A 10V CEBF634 250V 0.45Ω 8.1A 10V CEIF634 250V 0.45Ω 8.1A CEFF634 250V 0.45Ω 8.1A 10V d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 & TO-262 package & TO-220F full-pak for through hole. G D G S CEB SERIES TO-263(DD-PAK) G D S G D S CEI SERIES TO-262(I2-PAK) G D CEP SERIES TO-220 ABSOLUTE MAXIMUM RATINGS Parameter S S CEF SERIES TO-220F Tc = 25 C unless otherwise noted Limit Symbol TO-220/263/262 Drain-Source Voltage VDS 250 Gate-Source Voltage VGS ±30 Drain Current-Continuous Drain Current-Pulsed ID a IDM Maximum Power Dissipation @ TC = 25 C Units V V 8.1 d 32 32 d 74 38 W 0.3 W/ C 8.1 e PD - Derate above 25 C TO-220F 0.59 A A TJ,Tstg -55 to 150 C Symbol Limit Units Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case RθJC 1.7 3.3 C/W Thermal Resistance, Junction-to-Ambient RθJA 62.5 65 C/W 2006.July http://www.cetsemi.com 1 CEPF634/CEBF634 CEIF634/CEFF634 Electrical Characteristics Parameter Tc = 25 C unless otherwise noted Symbol Test Condition Min Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 250µA 250 Zero Gate Voltage Drain Current IDSS Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse Typ Max Units VDS = 250V, VGS = 0V 25 µA IGSSF VGS = 30V, VDS = 0V 100 nA IGSSR VGS = -30V, VDS = 0V -100 nA 4 V 0.45 Ω Off Characteristics V On Characteristics b Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Dynamic Characteristics VGS(th) VGS = VDS, ID = 250µA RDS(on) VGS = 10V, ID = 5.1A gFS VDS = 50V, ID = 5.1A 2 4.4 S 630 pF 100 pF 40 pF c Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS = 25V, VGS = 0V, f = 1.0 MHz Switching Characteristics c Turn-On Delay Time td(on) Turn-On Rise Time tr Turn-Off Delay Time td(off) VDD = 125V, ID = 5.6A, VGS = 10V, RGEN = 12Ω 19 40 ns 11 30 ns 46 90 ns Turn-Off Fall Time tf 10 30 ns Total Gate Charge Qg 26 33 nC Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS = 200V, ID = 5.6A, VGS = 10V 5 nC 11 nC Drain-Source Diode Characteristics and Maximun Ratings IS f Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage b VSD VGS = 0V, IS = 8.1A Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature . b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2% . c.Guaranteed by design, not subject to production testing. d.Limited only by maximum temperature allowed . e .Pulse width limited by safe operating area . f .Full package IS(max) = 6A . 2 0.9 8.1 A 1.5 V 4 CEPF634/CEBF634 CEIF634/CEFF634 12 10 ID, Drain Current (A) ID, Drain Current (A) VGS=10,9,8,7V 10 8 VGS=6V 6 4 VGS=5V 10 1 TJ=150 C 0 -55 C 2 VGS=4V 0 10 0 1 2 3 4 5 6 2 RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) C, Capacitance (pF) 600 400 Coss 200 Crss 0 10 20 30 40 50 3.0 2.5 ID=5.1A VGS=10V 2.0 1.5 1.0 0.5 0.0 -100 -50 0 50 100 150 200 VDS, Drain-to-Source Voltage (V) TJ, Junction Temperature( C) Figure 3. Capacitance Figure 4. On-Resistance Variation with Temperature VDS=VGS IS, Source-drain current (A) VTH, Normalized Gate-Source Threshold Voltage 10 Figure 2. Transfer Characteristics Ciss ID=250µA 1.1 1.0 0.9 0.8 0.7 0.6 -50 8 Figure 1. Output Characteristics 800 1.2 6 VGS, Gate-to-Source Voltage (V) 1000 1.3 4 VDS, Drain-to-Source Voltage (V) 1200 0 1.VDS=40V 2.Pulse Test 25 C -1 VGS=0V 10 10 10 -25 0 25 50 75 100 125 1 0 -1 0.4 150 0.6 0.8 1.0 1.2 1.4 TJ, Junction Temperature( C) VSD, Body Diode Forward Voltage (V) Figure 5. Gate Threshold Variation with Temperature Figure 6. Body Diode Forward Voltage Variation with Source Current 3 10 VDS=200V ID=5.6A RDS(ON)Limit 8 ID, Drain Current (A) VGS, Gate to Source Voltage (V) CEPF634/CEBF634 CEIF634/CEFF634 6 4 2 0 10 4 8 12 16 20 24 28 1ms 10ms DC 10 10 0 4 100µs 1 0 TC=25 C TJ=150 C Single Pulse -1 10 0 10 1 10 2 10 Qg, Total Gate Charge (nC) VDS, Drain-Source Voltage (V) Figure 7. Gate Charge Figure 8. Maximum Safe Operating Area VDD t on RL V IN D td(off) tf 90% 90% VOUT VOUT VGS RGEN toff tr td(on) 10% INVERTED 10% G 90% S VIN 50% 50% 10% PULSE WIDTH Figure 10. Switching Waveforms Figure 9. Switching Test Circuit r(t),Normalized Effective Transient Thermal Impedance 10 0 D=0.5 10 0.2 0.1 -1 0.05 0.02 10 10 PDM 0.01 Single Pulse -2 t1 t2 1. RθJC (t)=r (t) * RθJC 2. RθJC=See Datasheet 3. TJM-TC = P* RθJC (t) 4. Duty Cycle, D=t1/t2 -3 10 -5 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (sec) Figure 11. Normalized Thermal Transient Impedance Curve 4 10 0 10 1 3