FSU01LG General Purpose GaAs FET FEATURES • High Output Power: P1dB = 20.0dBm (Typ.) • High Associated Gain: G1dB = 19.0dB (Typ.) • Low Noise Figure: NF=0.55dB (Typ.)@f=2GHz • Low Bias Conditions: VDS=3V, 10mA • Cost Effective Hermetic Microstrip Package • Tape and Reel Available DESCRIPTION The FSU01LG is a high performance, low noise, GaAs FET designed for PCS/PCN applications as a driver in the 2GHz band. Fujitsu’s stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C) Item Condition Symbol Rating Unit Drain-Source Voltage VDS 12.0 V Gate-Source Voltage VGS -5 V Total Power Dissipation Ptot 375 mW Storage Temperature Tstg -65 to +175 °C Channel Temperature Tch 175 °C Note Note: Mounted on Al2O3 board (30 x 30 x 0.65mm) Fujitsu recommends the following conditions for the reliable operation of GaAs FETs: 1. The drain-source operating voltage (VDS) should not exceed 6 volts. 2. The forward and reverse gate currents should not exceed 0.7 and -0.1 mA respectively with gate resistance of 2000Ω. 3. The operating channel temperature (Tch) should not exceed 145°C. ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C) Item Symbol Test Conditions Min. 35 - Limit Typ. Max. 55 75 50 - -0.7 -1.2 -1.7 mA mS V Unit Pinch-off Voltage IDSS gm Vp VDS = 3V, VGS = 0V VDS = 3V, IDS = 27mA VDS = 3V, IDS = 2.7mA Gate Source Breakdown Voltage VGSO IGS = -2.7µA -5 - - V Output Power at 1dB Gain Compression Point P1dB 19.0 20.0 - dBm Power Gain at 1dB Gain Compression Point G1dB VDS = 6V IDS = 40mA f = 2GHz 18.0 19.0 - dB - 0.55 - dB - 18.5 - dB - 300 400 °C/W Saturated Drain Current Transconductance Noise Figure NF Associated Gain Gas VDS = 3V IDS = 10mA f = 2GHz Thermal Resistance Rth Channel to Case AVAILABLE CASE STYLES: LG G.C.P.: Gain Compression Point Note: The RF parameters are measured on a lot basis by sample testing at an AQL = 0.1%, Level-II inspection. Any lot failure shall be 100% retested. Edition 1.2 July 1999 1 FSU01LG General Purpose GaAs FET DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE POWER DERATING CURVE 60 300 Drain Current (mA) Total Power Dissipation (mW) 400 200 100 50 -0.2V 40 -0.4V 30 -0.6V 20 -0.8V 10 -1.0V -1.2V 0 50 100 150 200 1 Case Temperature (°C) 2 3 4 5 Drain-Source Voltage (V) ASSOCIATED GAIN vs. DRAIN-SOURCE CURRENT NOISE FIGURE vs. DRAIN-SOURCE CURRENT IDS = 10mA f = 2.0 GHz IDS = 10mA f = 2.0 GHz VDS = 6V 5V 19.5 0.9 VDS = 6V 4V 19.0 18.5 Noise Figure (dB) Associated Gain (dB) VGS =0V 2V 18.0 17.5 0.8 5V 4V 0.7 2, 3V 0.6 0.5 10 20 30 40 10 Drain-Source Current (mA) 20 30 40 Drain-Source Current (mA) 2 FSU01LG General Purpose GaAs FET S11 S22 +j50 S21 S12 +90° 0.2 +j100 +j25 3 2 4 GHz 1 +j250 +j10 2 3 1 4 GHz 0 10 25 50Ω 100 250 1 -j10 -j25 3 2 2 1 SCALE FOR |S21| .05 0.1 SCALE FOR |S12| 0.4 GHz 1 3 4 GHz 3 0.4 GHz -j250 2 4 GHz 180° 0.4 GHz 0.4 GHz 4 -j100 -90° -j50 S-PARAMETERS VDS =6V, IDS = 40mA FREQUENCY (MHZ) MAG S11 ANG MAG S21 ANG MAG S12 S22 400 .987 -13.8 4.507 168.3 .011 77.9 .812 -6.7 600 .985 -20.3 4.488 162.8 .016 76.2 .812 -10.0 ANG MAG ANG 800 .974 -27.1 4.421 157.0 .021 72.0 .807 -13.2 1000 .966 -34.1 4.367 151.3 .026 68.6 .803 -16.4 1200 .954 -40.0 4.309 146.4 .030 65.2 .793 -19.8 1400 .936 -47.0 4.212 140.5 .035 60.3 .786 -23.0 1600 .935 -53.3 4.158 135.2 .038 56.5 .778 -25.8 1800 .910 -58.7 4.037 130.8 .043 51.8 .766 -28.9 2000 .904 -65.4 3.980 125.2 .047 48.8 .761 -31.8 2200 .888 -71.0 3.885 120.7 .049 45.2 .748 -34.3 2400 .871 -77.0 3.797 115.5 .052 42.6 .739 -37.5 2600 .856 -82.5 3.696 110.9 .055 39.5 .729 -40.2 2800 .844 -88.1 3.609 106.2 .057 35.7 .716 -43.0 3000 .829 -93.3 3.511 101.9 .060 30.9 .704 -45.8 3200 .812 -98.4 3.400 97.7 .060 27.2 .692 -47.9 3400 .798 -103.1 3.323 93.8 .061 26.0 .687 -50.3 3600 .788 -107.9 3.249 89.7 .062 22.9 .681 -52.8 3800 .779 -112.6 3.176 85.6 .063 20.9 .674 -55.3 4000 .769 -117.3 3.101 81.7 .063 19.4 .668 -58.0 Download S-Parameters, click here 3 0° FSU01LG General Purpose GaAs FET OUTPUT POWER & IM3 vs. INPUT POWER 18 Total Output Power (dBm) 16 14 12 VDS = 6V f = 2 GHz ∆f = +1 MHz IDS = 40mA -10 Single Tone 2-Tone -20 Pout 10 -30 8 6 -40 4 IM3 2 0 -50 -2 -4 -6 -12 -10 -8 -6 -4 -2 0 2 Total Input Power (dBm) 4 4 6 -60 IM3 (dBc) 20 FSU01LG General Purpose GaAs FET Case Style "LG" Metal-Ceramic Package 4.78±0.5 1.78±0.15 1.5±0.3 (0.07) (0.059) 1.5±0.3 (0.059) 1.0 (0.039) 1.5±0.3 (0.059) 1 3 4.78±0.5 1.78±0.15 1.5±0.3 (0.07) (0.059) 2 4 0.5 (0.02) Gold Plated Leads 1.3 Max (0.051) 1. 2. 3. 4. Gate Source Drain Source 0.1 (0.004) Unit: mm(inches) For further information please contact: FUJITSU COMPOUND SEMICONDUCTOR, INC. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111 www.fcsi.fujitsu.com FUJITSU MICROELECTRONICS EUROPE, GmbH Quantum Devices Division Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ Phone:+44 (0)1628 504800 FAX:+44 (0)1628 504888 CAUTION Fujitsu Compound Semiconductor Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: • Do not put these products into the mouth. • Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. • Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Fujitsu Limited reserves the right to change products and specifications without notice. The information does not convey any license under rights of Fujitsu Limited or others. © 1998 FUJITSU COMPOUND SEMICONDUCTOR, INC. Printed in U.S.A. FCSI0598M200 5