GTM GMBT9013

1/3
GM BT9013
N P N E PI TA XI A L T RA N SI STO R
Description
The GMBT9013 is designed for use in 1W output amplifier of portable radios in class B push-pull operation.
Package Dimensions
Millimeter
Min.
Max.
2.70
3.10
2.40
2.80
1.40
1.60
0.35
0.50
0
0.10
0.45
0.55
REF.
A
B
C
D
E
F
REF.
G
H
K
J
L
M
Millimeter
Min.
Max.
1.90 REF.
1.00
1.30
0.10
0.20
0.40
0.85
1.15
0
10
Absolute Maximum Ratings at Ta = 25
Parameter
Junction Temperature
Storage Temperature
Symbol
Ratings
Tj
+150
Unit
Tstg
-55 ~ +150
Collector to Base Voltage
VCBO
40
V
Collector to Emitter Voltage
VCEO
20
V
Emitter to Base Voltage
VEBO
5
V
Collector Current
IC
500
mA
Total Power Dissipation
PD
225
mW
Characteristics
Symbol
at Ta = 25
Min.
Typ.
Max.
Unit
BVCBO
40
-
-
V
IC=100uA , IE=0
Test Conditions
BVCEO
20
-
-
V
IC=1mA, IB=0
BVEBO
5
-
-
V
IE=100uA, IC=0
ICBO
-
-
100
nA
VCE=25V, IE=0
IEBO
-
-
100
nA
VEB=3V, IC=0
VCE(sat)
-
-
0.6
V
IC=500mA, IB=50mA
VBE(sat)
-
-
1.2
V
IC=500mA, IB=50mA
V
VCE=1V, IC=10mA
VBE(on)
HFE1
-
-
0.9
112
180
300
VCE=1V, IC=50mA
HFE2
40
-
-
fT
100
-
-
MHz
-
-
8
pF
Cob
VCE=1V,IC=500mA
Classification Of hFE1
Rank
hFE
G
H
L
112-166
144-202
176-300
VCE=1V, IC=10mA,f=100MHz
VCB=10V, f=1MHz, IE=0
2/3
Characteristics Curve
3/3
Characteristics Curve
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 ~ 4
FAX : 86-21-38950165