1/2 G L A2 7 NPN TRANSISTOR Description The GLA27 is designed for darlington amplifier high current gain collector current to 500mA. Package Dimensions REF. A C D E I H Millimeter Min. Max. 6.70 7.30 2.90 3.10 0.02 0.10 10 0 0.60 0.80 0.25 0.35 REF. B J 1 2 3 4 5 Millimeter Min. Max. 13 TYP. 2.30 REF. 6.30 6.70 6.30 6.70 3.30 3.70 3.30 3.70 1.40 1.80 Absolute Maximum Ratings at Ta = 25 Parameter Junction Temperature Storage Temperature Symbol Ratings Tj +150 Tstg -55 ~ +150 Unit Collector to Base Voltage VCBO 60 V Collector to Emitter Voltage VCES 60 V Emitter to Base Voltage VEBO 10 V Collector Current IC 500 mA Total Power Dissipation PD 2 W Characteristics Symbol BVCBO at Ta = 25 Min. Typ. Max. Unit 60 - - V Test Conditions IC=100uA , IE=0 BVCES 60 - - V IC=100uA, VBE=0 BVEBO 10 - - V IE=10uA , IC=0 ICBO - - 100 nA VCB=50V ,IE=0 IEBO - - 100 nA VEB=10V, IC=0 ICES - - 500 nA VCE=50V VCE(sat) - - 1.5 V IC=100mA, IB=0.1mA VBE(sat) - - 2.0 V IC=100mA, VCE=5V hFE1 10K - - VCE=5V, IC=10mA hFE2 10K - - VCE=5V, IC=100mA 2/2 Characteristics Curve Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 FAX : 86-21-38950165