1/2 GM BT4401 NP N E PITAXI AL P L ANAR T RANS ISTO R Description The GMBT4401 is designed for general purpose switching amplifier applications. Package Dimensions REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55 REF. G H K J L M Millimeter Min. Max. 1.90 REF. 1.00 1.30 0.10 0.20 0.40 0.85 1.15 0 10 Absolute Maximum Ratings at Ta = 25 Parameter Junction Temperature Storage Temperature Symbol Ratings Tj +150 Unit Tstg -55 ~ +150 Collector to Base Voltage VCBO 60 V Collector to Emitter Voltage VCEO 40 V Emitter to Base Voltage VEBO 6 V Collector Current IC 600 mA Total Power Dissipation PD 225 mW Characteristics Symbol at Ta = 25 Min. Typ. Max. Unit BVCBO 60 - - V IC=100uA BVCEO 40 - - V IC=1mA BVEBO 6 - - V IE=10uA ICEX - - 100 nA VCE=35V, VBE= -0.4V VCE(sat)1 - - 0.4 V IC=150mA, IB=15mA VCE(sat)2 - - 750 mV IC=500mA, IB=50mA VBE(sat)1 650 - 850 mV IC=150mA, IB=15mA V VBE(sat)2 Test Conditions - - 1.2 hFE1 20 - - VCE=1V, IB=0.1mA hFE2 40 - - VCE=1V, IC=1mA hFE3 80 - - VCE=1V, IC=10mA hFE4 100 - 300 VCE=1V, IC=150mA hFE5 40 - - VCE=2V, IC=500mA fT 250 - - MHz - - 6.5 pF Cob IC=500mA, IB=50mA VCE=10V, IC=20mA, f=100MHz VCB=5V, f=1MHz 2/2 Characteristics Curve Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165