GTM GMBT5551

1/2
GM BT5551
NP N E PITAXI AL P L ANAR T RANS ISTO R
Description
The GMBT5551 is designed for general purpose applications requiring high breakdown voltages.
Package Dimensions
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
2.70
3.10
2.40
2.80
1.40
1.60
0.35
0.50
0
0.10
0.45
0.55
REF.
G
H
K
J
L
M
Millimeter
Min.
Max.
1.90 REF.
1.00
1.30
0.10
0.20
0.40
0.85
1.15
10
0
Absolute Maximum Ratings
Parameter
Junction Temperature
Storage Temperature
Symbol
Ratings
Tj
+150
Unit
Tstg
-55 ~ +150
Collector to Base Voltage
VCBO
180
V
Collector to Emitter Voltage
VCES
160
V
Emitter to Base Voltage
VEBO
6.0
V
Collector Current
IC
600
mA
Total Power Dissipation
PD
225
mW
Characteristics
Symbol
at Ta = 25
Min.
Typ.
Max.
Unit
BVCBO
180
-
-
V
IC=100uA
BVCEO
160
-
-
V
IC=1mA
BVEBO
6
-
-
V
IE=10uA
ICBO
-
-
50
nA
VCB=120V
IEBO
-
-
50
nA
VEB=4V
VCE(sat)1
-
-
150
mV
IC=10mA, IB=1mA
VCE(sat)2
-
-
200
mV
IC=50mA, IB=5mA
VBE(sat)1
-
-
1
V
IC=10mA, IB=1mA
VBE(sat)2
-
-
1
V
IC=50mA, IB=5mA
hFE1
80
-
-
hFE2
80
-
250
VCE=5V, IC=10mA
hFE3
30
-
-
VCE=5V, IC=50mA
fT
100
Cob
-
-
Test Conditions
VCE=5V, IC=1mA
300
MHz
6
pF
VCE=10V, IC=10mA, f=100MHz
VCB=10V, f=1MHz
2/2
Characteristics Curve
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 FAX : 86-21-38950165