PHOTODIODE GaAs PIN photodiode array G8921-01 Photodiode array for data communication Features Applications l Active area: φ0.06 mm Element pitch: 250 µm 4-element array l High-speed response: 10 Gbps [(2.5 Gbps per channel) ×4] at low bias voltage (VR=2 V) l Low dark current, low capacitance l Up to 16 elements available as option ■ General ratings Parameter Active area Element pitch Number of elements ■ Absolute maximum ratings Parameter Reverse voltage Reverse current Operating temperature Storage temperature * In N2 environment or in vacuum l Optical fiber communications l High-speed data link Symbol Symbol VR Max. IR Max. Topr Tstg Value f0.06 250 4 Remark Unit mm µm ch Value 30 0.5 -40 to +85 -55 to +125 * ■ Electrical and optical characteristics (Unless other wise, Ta=25 °C, per 1 element) Parameter Spectral response range Peak sensitivity wavelength Photo sensitivity Dark current Terminal capacitance Cut-off frequency Symbol l lp S ID Ct fc Condition l=850 nm VR=5 V VR=2 V, f=1 MHz l=850 nm, VR=2 V, RL=50 W, -3 dB Unit V mA °C °C Min. 0.45 - Typ. 470 to 870 850 0.5 2 0.35 Max. 50 0.5 Unit nm nm A/W pA pF 2 - - GHz 1 GaAs PIN photodiode array ■ Spectral response ■ Dark current vs. reverse voltage (Typ. Ta=25 ˚C) 0.6 (Typ. Ta=25 ˚C) 100 pA 0.5 10 pA DARK CURRENT PHOTO SENSITIVITY (A/W) G8921-01 0.4 0.3 0.2 1 pA 100 fA 0.1 0 300 400 500 600 700 800 900 10 fA 0.01 1000 WAVELENGTH (nm) 0.1 1 10 100 REVERSE VOLTAGE (V) KGPDB0048EA KGPDB0049EA ■ Terminal capacitance vs. reverse voltage (Typ. Ta=25 ˚C) 1000 RELATIVE SENSITIVITY (%) 10 pF TERMINAL CAPACITANCE ■ Cross-talk characteristic 1 pF 100 fF 0.01 0.1 1 10 (Typ. Ta=25 ˚C, λ=830 nm, step: 5 µm, Pin=20 nW, spot light size: 10 µm) n ch 100 10 n+1 ch 1 0.1 0.01 0.001 100 0 REVERSE VOLTAGE (V) 100 200 300 400 500 POSITION (µm) KGPDB0050EA KGPDB0051EA 1.0 0.2 ± 0.05 ■ Dimensional outline (unit: mm) 0.15 0.25 ANODE CATHODE 2.30 6.4 ACTIVE AREA 0.06 × 4 ch KGPDA0017EA Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2004 Hamamatsu Photonics K.K. HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, http://www.hamamatsu.com U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 Cat. No. KGPD1009E02 2 Jan. 2004 DN