HANBIT HMD1M4Z1-6

HANBit
HMD1M4Z1
4Mbit(1Mx4bit) Fast Page Mode, 1K Refresh, 20Pin ZIP, 5V Design
Part No. HMD1M4Z1
DESCRIPTION
The HMD1M4Z1 is an 1M x 4 bits Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of
memory cells
within the same row. Power supply voltage (+5V ), access time (-5, -6), power consumption(Normal or Low power), and package
type (ZIP)
are optional features of this Module. The HMD1M4Z1 have CAS-before-RAS refresh, RAS-only refresh and Hidden
refresh capabilities.
The HMD1M4Z1 is optimized for application to the systems, which are required high density and large capacity such as main
memory for main frames and mini computers, personal computer and high performance microprocessor systems.
The HMD1M4Z1 provides common data and outputs.
Features
PIN ASSIGNMENT
w Fast Page Mode operation
w CAS-before-RAS refresh capability
PIN
SYMBOL
w RAS-only and Hidden refresh capability
1
/OE
w Fast parallel test mode capability
2
/CAS
w TTL(5V) compatible inputs and outputs
3
DQ2
w Early write or output enable controlled write
4
DQ3
w Available in 20pin ZIP packages
5
VSS
w Single +5V± 10% power supply
6
DQ0
w 1,024 Refresh Cycles/16ms
7
DQ1
8
/WE
w Performance Range
tRAC
tCAC
tRC
tPC
9
/RAS
HMD1M4Z1-5
50
15
90
35
10
A9
HMD1M4Z1-6
60
15
110
40
11
A0
12
A1
13
A2
14
A3
Speed
PIN DESCRIPTION
15
VCC
FUNCTION
Read/Write
Enable
16
A4
17
A5
Vcc
Power
(+5V)
18
A6
19
A7
Vss
Ground
20
A8
NC
No
Connection
PIN
FUNCTION
PIN
A0 – A9
Address Inputs
/WE
DQ0 –
Data
Input/Output
DQ3
/RAS
/CAS
/OE
Row Address
Strobe
Column
Address Strobe
Data Output
Enable
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HANBit
HMD1M4Z1
ABSOLUTE MAXIMUM RATINGS*
SYMBOL
PARAMETER
RATING
UNIT
0 ~ 70
C
Storage Temperature (Plastic)
-55 ~ 150
C
Voltage on any Pin Relative to Vss
-1.0 ~ 7.0
V
VCC
Power Supply Voltage
-1.0 ~ 7.0
V
IOUT
Short Circuit Output Current
50
mA
Power Dissipation
600
mW
Ambient Temperature under Bias
TA
TSTG
VIN/VOUT
PD
*NOTE: 1. Stress greater than above absolute Maximum Ratings?
May cause permanent damage to the device.
RECOMMENDED DC OPERATING CONDITIONS (TA = 0 ~ 70C)
PARAMETER
SYMBOL
MIN
TYP.
MAX
UNIT
Supply Voltage
Vcc
4.5
5.0
5.5
V
Ground
Vss
0
0
0
V
Input High Voltage
VIH
2.4
-
Vcc+1
V
Input Low Voltage
VIL
-1.0
-
0.8
V
*NOTE: All voltages referenced to Vcc
DC AND OPERATING CHARACTERISTICS
SYMBOL
VOH
VOL
ICC1
ICC2
ICC3
ICC4
PARAMETER
MIN
Output High Level Voltage (IOUT = -5mA)
2.4
Output Low Level Voltage (IOUT = 4.2mA)
0
MAX
UNIT
V
0.4
Operating Current
-5
85
(/RAS,/CAS,Address Cycling : tRC = tRC min)
-6
75
V
mA
Standby Current (/RAS,/CAS = VIH)
-
2
mA
/RAS Only Refresh Current
-5
85
(/RAS Cycling, /CAS = VIH,: tRC = tRC min)
-6
75
Fast Page Mode Current
-5
65
mA
(/RAS =VIL, /CAS, Address Cycling : tPC = tPC min)
-6
55
mA
1
mA
mA
ICC5
Standby Current (/RAS,/CAS >= Vcc – 0.2V)
ICC6
/CAS before /RAS Refresh Current (tRC = tRC min)
-5
85
-6
75
mA
-
-
uA
-5
5
uA
-5
5
uA
Self Refresh Current
ICCS
(/RAS=/UCAS=/LCAS=VIL, /WE=/OE=A0~A9= Vcc – 0.2V or 0.2V,
DQ0~DQ31= Vcc – 0.2V, 0.2V or Open)
Input Leakage Current
II(L)
IO(L)
(Any Input (0V<=VIN<= VIN + 0.5V, All Other Pins Not Under Test = 0V)
Output Leakage Current(DOUT is Disabled, 0V<=V OUT<= Vcc)
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HMD1M4Z1
Note: 1. Icc depends on output load condition when the device is selected.
Icc (max) is specified at the output open condition.
2. Address can be changed once or less while /RAS = VIL.
3. Address can be changed once or less while /CAS = V IH
CAPACITANCE
o
( TA=25 C, Vcc = 5V+/- 10%, f = 1Mhz )
DESCRIPTION
SYMBOL
MIN
MAX
UNITS
NOTE
Input Capacitance (A0-A9)
CI1
-
5
pF
1
Input Capacitance (/WE,/RAS, /CAS0-
C I2
-
7
pF
1,2
CDQ1
-
7
pF
1,2
/CAS3,/OE)
Input/Output Capacitance (DQ0-31)
Note: 1. Capacitance measured with Boonton Meter or effective capacitance measuring method.
2. /CAS = VIH to disable DOUT.
AC CHARACTERISTICS
o
( 0 C ≤ TA ≤ 70oC , Vcc = 5V±10%, VIH /VIL = 2.4/0.8V, VOH /VOL =2.4/0.4V, See notes 1,2)
-5
SYMBOL
-6
PARAMETER
UNIT
MIN
MAX
MIN
NOTE
MAX
tRC
Random Read or Write Cycle Time
90
110
ns
tRWC
Read-modify-writer cycle time
132
152
ns
tRAC
Access Time from /RAS
50
60
ns
3,4,10
tCAC
Access Time from /CAS
15
15
ns
3,4,5
taa
Access Time from Column Address
25
30
ns
3,10
tOFF
Output Buffer Turn-off Time
0
12
0
12
ns
6
tT
Transition Time (Rise and Fall)
3
50
3
50
ns
2
tRP
/RAS Precharge Time
30
tRAS
/RAS Pulse Width
50
tRSH
/RAS Hold Time
15
15
ns
tCSH
/CAS Hold Time
50
60
ns
tCAS
/CAS Pulse Width
15
10K
15
10K
ns
tRCD
/RAS to /CAS Delay Time
20
35
20
45
ns
4
tRAD
/RAS to Column Address Delay Time
15
25
15
30
ns
10
tCRP
/CAS to /RAS Precharge Time
5
5
ns
tASR
Row Address Setup Time
0
0
ns
tRAH
Row Address Hold Time
10
10
ns
tASC
Column Address Setup Time
0
0
ns
11
tCAH
Column Address Hold Time
10
10
ns
11
tRAL
Column Address to /RAS Lead Time
25
30
ns
tRCS
Read Command Setup Time
0
0
ns
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REV.1.0(August.2002)
40
10K
3
60
ns
10K
ns
HANBit Electronics Co.,Ltd.
HANBit
HMD1M4Z1
tRCH
Read Command Hold Time to /CAS
0
0
ns
8
tRRH
Read Command Hold Time to /RAS
0
0
ns
8
tWCH
Write Command Hold Time
10
10
ns
tWP
Write Command Pulse Width
10
10
ns
tRWL
Write Command to /RAS Lead Time
15
15
ns
tCWL
Write Command to /CAS Lead Time
13
15
ns
tDS
Data-in Setup Time
0
0
ns
9
tDH
Data-in Hold Time
10
10
ns
9
tREF
Refresh Period (1024 Cycle)
twcs
Write Command Setup Time
0
0
ms
7
tCWD
/CAS to /WE delay time
37
37
ms
7,13
tRWD
/RAS to /WE delay time
72
82
ns
7
tAWD
Column Address to /WE delay time
47
52
ns
7
tCPWD
/CAS precharge to /WE delay time
52
57
ns
7
10
10
ns
10
10
ns
5
5
ns
16
16
ms
/CAS Setup Time
tCSR
15
(/CAS-before-/RAS Refresh Cycle)
/CAS Hold Time
tCHR
16
(/CAS-before-/RAS Refresh Cycle)
tRPC
/RAS Precharge to /CAS Hold Time
tCPA
Access Time from /CAS Precharge
tPC
Fast Page Mode Cycle Time
35
40
ns
tCP
Fast Page Mode /RAS Precharge Time
10
10
ns
tRASP
Fast Page Mode /CAS Pulse Time
50
/RAS
tRHCP
30
200K
35
60
200K
ns
3
12
ns
Hold Time time from /CAS
30
35
ns
Precharge
tOEA
/OE Access Time
tOED
/OE to data delay
15
12
15
12
ns
3
ns
Output buffer turn off delay time from
0
tOEZ
12
0
12
ns
/OE
tOEH
/OE command hold time
15
15
ns
tRASS
/RAS Pulse Width(CBR self refresh)
100
100
us
tPRS
/RAS Precharge Time(CBR self refresh)
90
110
ns
tCHS
/CAS Hold Time(CBR self refresh)
-50
-50
ns
Note:
1. An initial pause of 200us is required after power-up followed by any 8 /RAS-only refresh or /CAS-before-/RAS refresh
cycles
before proper device operation is achieved.
2. Input voltage levels are VIH / VIL. VIH(min) and VIL(max) are reference levels for measuring timing of input signals.
Also, transition times are measured between . VIH and VIL are assumed to be 5ns for all inputs.
3. Measured with a load circuit equivalent to 2TTL loads and 100pF.
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HANBit
HMD1M4Z1
4. Operation with the tRCD (max) limit insures that tRAC (max) can be met, tRCD (max) is specified as a reference point only,
if tRCD is greater than the specified tRCD(max) limit, then access time is controlled exclusively by tCAC .
5. Assumes that tRCD <= tRCD (max).
6. This parameter defines the time at which the output achieves the open circuit condition and is not referenced to VOH /
VOL .
7. TWCS, TRWD, TCWD, TCPWD are non restrictive operating parameter. They are included in the data sheet as electrical
characteristics
only. If twcs >= twcs (min), the cycle is an early write cycle and the data out pin will remain open circuit (high impedance)
throughout
the entire cycle. If tCWD >= tCWD (min), tRWD >= tRWD (min), TCPWD>= TCPWD(min), then the cycle is a read-modify-write
cycle and the data output will contain the data read from the selected address. If neither of the above conditions is
satisfied, the condition of the data out is indeterminate.
8. Either tRCH or tRRH must be satisfied for a read cycles.
9. These parameters are referenced to /CAS falling edge in early write cycles and to /WE falling edge in /OE controlled
write cycle and read-modify-write cycles.
10. Operation with the tRAD (max) limit insures that tRAC (max) can be met, tRAD (max) is specified as a reference point only,
if tRAD is greater than the specified tRAD (max) limit, then access time is controlled exclusively by tAA.
11. tASC, tCAH are are referenced to the earlier /CAS falling edge.
12. tCP is specified from the later /CAS rising edge in the previous cycle to the earlier /CAS falling edge in the next cycle.
13. tCWD is referenced to the later /CAS falling edge at word read-modify-write cycle.
14. tCWL is specified from /WE falling edge to the earlier /CAS rising edge .
15. tCSR is referenced to the earlier /CAS falling edge before /RAS transition low.
16. tCHR is referenced to the later /CAS rising edge after /RAS transition low.
PACKAGING INFORMATION
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HANBit Electronics Co.,Ltd.
HANBit
HMD1M4Z1
1.94 ± 0.20
1.94 ± 0.20
1.27 ± 0.20
97. 80 ± 0. 20
1.8±0.30 mm
2.54 mm
ORDERING INFORMATION
Part Number
Density
Org.
Package
HMD1M4Z1-5
4Mbit
1M x 4Bit
20 Pin-ZIP
HMD1M4Z1-6
4Mbit
1M x 4Bit
20 Pin-ZIP
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Component
Vcc
MODE
SPEED
1EA
5V
FP
50ns
1EA
5V
FP
60ns
Number
HANBit Electronics Co.,Ltd.