ETC HW-108A

InSb Hall Element
HW-108A
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•High-sensitivity InSb Hall element.
•Super mini-mold SMT package (fits SOT343 land pattern).
•Shipped in packet-tape reel (4000pcs per reel).
Note : It is requested to read and accept "IMPORTANT NOTICE".
•Absolute Maximum Ratings
Item
Symbol
Limit
Unit
Max. Input Current
Ic
20
mA
Operating Temp. Range
Topr.
–40 to +110
˚C
Storage Temp. Range
Tstg.
–40 to +125
˚C
Const. Current Drive
•Classification of Output Hall Voltage (VH)
VH [ mV ]
Rank
•Electrical Characteristics(Ta=25˚C)
Symbol
Item
Conditions
Min.
Const. Voltage Drive
Output Hall Voltage
VH
Input Resistance
Rin
Typ.
Max.
122
B=50mT, Vc=IV
B=0mT, Ic=0.1mA
Unit
320
250
mV
450
A
122
to
150
B
144
to
174
C
168
to
204
D
196
to
236
E
228
to
274
F
266
to
320
Conditions
B=50mT, Vc=IV
Constant Voltage Drive
Note : When ordering, specify 3-rank or wider range(e·g·,BCD).
Output Resistance
Rout
B=0mT, Ic=0.1mA
Offset Voltage
Vos
B=0mT, Vc=IV
250
450
–7
+7
•Input Current Derating Curve
mV
Input Resistance
Temp. Coefficient of Rin
VH
–1.8
%/˚C
Rin
B=0mT, Ic=0.1mA
–1.8
%/˚C
Dielectric Strength
Rin : 250 to 450
20
B=50mT, Ic=5mA
100V D.C
1.0
Input Current(mA)
Temp. Coefficient of VH
M
10
Notes : 1. VH = VHM – Vos (VHM:meter indication)
1
3) – VH (T2)
X 100
2. VH = VH (T1) X VH (T
(T3 – T2)
1
3) – Rin (T2)
X 100
3. Rin = Rin (T1) X Rin (T
(T – T )
3
0
–60
2
T1 = 20˚C, T2 = 0˚C, T3 = 40˚C
20
40
60
1
100
120
Input Resistance
Rin : 250 to 450
2.0
0 to 0.1
Input Voltage(V)
N
1.25±0.1
80
•Input Voltage Derating Curve
0.25
0.4
0.3
5˚
3
5˚
4
0.1
1.0
0.8 0
+0.1
5˚
Pinning
0
–60
5˚
Input
1(±)
3
Output
2(±)
4
–40
– 20
0
20
40
60
80
100
120
Ambient Temperature.(˚C)
(±)
Note : For constant-voltage drive, stay within this input voltage derating
curve envelope.
(±)
2.1±0.2
2
0
Note : Rin of Hall element decreases rapidly as ambient temperature
increases. Ensure compliance with input current derating curve envelope,
throughout the operating temperature range.
2.1±0.1
1.3
– 20
Ambient Temperature.(˚C)
•Dimensional Drawing (mm)
0.4
–40
19
HW-108A
a
•Characteristic Curves
Rin-T
VH-B
2000
600.0
Ic const
Vc const
500.0
1600
Output Voltage:VH(mV)
Input Resistance:Rin( )
1800
1400
1200
1000
800
600
400
Ic = 5 (mA)
Vc = 1 (V)
Ta = 25 (˚C)
400.0
Ic
300.0
c
Vin
200.0
100.0
200
0
-50
0
50
100
0.0
0
150
10
20
Ambient Temperature(˚C)
VH-T
Ic
1250
Output Voltage:VH(mV)
Output Voltage:VH(mV)
Ic = 5 (mA)
Vc = 1 (V)
B = 50 (mT)
1500
1000
750
500
Vin
Ic const
Vc const
1000
Ic
B = 50 (mT)
Ta = 25 (˚C)
800
600
Vin
400
g
200
0
–50
0
50
100
0
0.0
150
5
10
15
20 Ic:(mA)
0.5
1.0
1.5
2.0 Vc:(V)
Ic (mA) Input Current
Vc (V) Input Voltage
Ambient Temperature(˚C)
VOS-Vc, VOS-Ic
40
20
Ic const
Vc const
30
Ic = 5 (mA)
Vc = 1 (V)
B = 0 (mT)
Ic
Ic const
Vc const
18
Offset Voltage:Vos(mV)
Offset Voltage:Vos(mV)
50
1200
Ic const
Vc const
1750
VOS-T
40
VH-Vc, VH-Ic
2000
250
30
Magnetic Flux Density B (mT)
20
10
16
i
Ic
B = 0 (mT)
Ta = 25 (˚C)
14
12
10
8
Vin
6
4
Vin
2
0
–50
0
50
100
0
0.0
150
Ambient Temperature(˚C)
5
10
15
0.5
1.0
1.5
Ic (mA) Input Current
Vc (V) Input Voltage
*Magnetic Flux Density
1(mT)=10(G)
In This Example : Rin=350( ), Vos=4.7(mV), Vc=1(V)
20
20 Ic:(mA)
2.0 Vc:(V)