NIKO-SEM P6503NJ N- & P-Channel Enhancement Mode Field Effect Transistor TSOPJW-8 PRODUCT SUMMARY V(BR)DSS RDS(ON) ID N-Channel 30 65mΩ 4A P-Channel -30 150mΩ -3A G : GATE D : DRAIN S : SOURCE ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL N-Channel P-Channel UNITS Drain-Source Voltage VDS 30 -30 V Gate-Source Voltage VGS ±20 ±20 V 4 -3 3 -2 10 -10 Continuous Drain Current TC = 25 °C ID TC = 70 °C Pulsed Drain Current 1 IDM TC = 25 °C Power Dissipation PD TC = 70 °C Junction & Storage Temperature Range 1 Lead Temperature ( /16” from case for 10 sec.) 2 A W 1.3 Tj, Tstg -55 to 150 TL 275 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Ambient SYMBOL TYPICAL RθJA MAXIMUM UNITS 110 °C / W 1 Pulse width limited by maximum junction temperature. Duty cycle ≤ 1% 2 1 JUL-08-2004 NIKO-SEM P6503NJ N- & P-Channel Enhancement Mode Field Effect Transistor TSOPJW-8 ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted) LIMITS PARAMETER SYMBOL TEST CONDITIONS MIN UNIT TYP MAX STATIC Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA N-Ch 30 VGS = 0V, ID = -250µA P-Ch -30 VDS = VGS, ID = 250µA N-Ch 0.9 1.5 2.5 P-Ch -0.9 -1.5 -2.5 V(BR)DSS Gate Threshold Voltage VGS(th) VDS = VGS, ID = -250µA Gate-Body Leakage VDS = 0V, VGS = ±20V N-Ch ±100 VDS = 0V, VGS = ±20V P-Ch ±100 VDS = 24V, VGS = 0V N-Ch 1 P-Ch -1 VDS = 20V, VGS = 0V, TJ = 55 °C N-Ch 10 P-Ch -10 IGSS VDS = -24V, VGS = 0V Zero Gate Voltage Drain Current IDSS VDS = -20V, VGS = 0V, TJ = 55 °C 1 On-State Drain Current ID(ON) VDS = 5V, VGS = 10V VDS =-5V, VGS = -10V VGS = 4.5V, ID = 3A 1 Drain-Source On-State Resistance VGS = -4.5V, ID = -2A N-Ch 10 P-Ch -10 A N-Ch 72 120 P-Ch 170 250 mΩ N-Ch 48 65 P-Ch 100 150 N-Ch 6 P-Ch 3 N-Channel VDS = 0.5V(BR)DSS, VGS = 10V, N-Ch 5 7.5 P-Ch 5.5 6.6 ID = 3A N-Ch 0.8 P-Channel P-Ch 1.2 VDS = 0.5V(BR)DSS, VGS = -10V, N-Ch 1.0 ID = -2A P-Ch 0.9 VGS = -10V, ID = -3A 1 gfs nA µA RDS(ON) VGS = 10V, ID = 4A Forward Transconductance V VDS = 10V, ID = 3A VDS = -10V, ID = -2A S DYNAMIC Total Gate Charge 2 Qg 2 Gate-Source Charge 2 Gate-Drain Charge Qgs Qgd 2 nC JUL-08-2004 NIKO-SEM N- & P-Channel Enhancement Mode Field Effect Transistor 2 Turn-On Delay Time 2 tr 2 Turn-Off Delay Time 7 11 P-Ch 8 12 N-Ch 12 18 P-Ch 11 18 N-Ch 12 18 P-Ch 14 21 N-Ch 7 11 ID ≅ -1A, VGS = -10V, RGEN = 6Ω P-Ch 8 12 ID ≅ 1A, VGS = 10V, RGEN = 6Ω P-Channel td(off) VDS = -15V, RL = 15Ω 2 Fall Time tf TSOPJW-8 N-Ch N-Channel td(on) VDS = 15V, RL = 15Ω Rise Time P6503NJ nS SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 °C) 1 Forward Voltage IF = 0.9A, VGS = 0V VSD IF = -0.9A, VGS = 0V Reverse Recovery Time trr IF = 0.9A, dlF/dt = 100A / µS IF = -0.9A, dlF/dt = 100A / µS N-Ch 1.2 P-Ch -1.2 N-Ch 40 80 P-Ch 40 80 V nS Pulse test : Pulse Width ≤ 300 µsec, Duty Cycle ≤ 2%. Independent of operating temperature. 3 Pulse width limited by maximum junction temperature. 1 2 REMARK: THIS PRODUCT MARKED WITH “50YWW” 50YWW Marking Description: 5 - N+P MOSFET 0 - Serial Number Y - Year W - Week 3 JUL-08-2004 NIKO-SEM N- & P-Channel Enhancement Mode Field Effect Transistor P6503NJ TSOPJW-8 N-CHANNEL 4 JUL-08-2004 NIKO-SEM N- & P-Channel Enhancement Mode Field Effect Transistor 5 P6503NJ TSOPJW-8 JUL-08-2004 NIKO-SEM N- & P-Channel Enhancement Mode Field Effect Transistor P6503NJ TSOPJW-8 P-CHANNEL 6 JUL-08-2004 NIKO-SEM N- & P-Channel Enhancement Mode Field Effect Transistor 7 P6503NJ TSOPJW-8 JUL-08-2004 NIKO-SEM P6503NJ N- & P-Channel Enhancement Mode Field Effect Transistor TSOPJW-8 TSOPJW-8 MECHANICAL DATA mm Mm Dimension Dimension Min. Typ. Max. A 2.95 3.05 3.10 H B 2.30 2.40 2.50 I C 2.65 2.85 3.05 J 7° NOM D 0.25 0.32 0.40 K 0.04 REF. E 0.65BSC L F 0.925 1.00 M G 0.01 0.1 N Min. Typ. Max. 0.30 0.45 0.60 0.1 J 0.15 0.20 K F L G D I H E M B C A 8 JUL-08-2004