ISAHAYA RT2A00M

RT2A00M
COMPOSITE TRANSISTOR
FOR LOW FREQUENCY AMPLIFY APPLICATION
SILICON PNP EPITAXIAL TYPE
OUTLINE DRAWING
DESCRIPTION
Unit:mm
2.1
SC-88 package.
1.25
0.2
RT2A00M is a composite transistor built with two 2SA1602A chips in
FEATURE
⑤
0.65
①
Each transistor elements are independent.
●Mini package for easy mounting
②
0.65
2.0
●Silicon pnp epitaxial type
④
③
APPLICATION
0.13
0∼0.1
0.65
0.9
For low frequency amplify application
⑤
④
Tr1
Tr2
①
②
③
TERMINAL CONNECTOR
①:BASE1
②:EMITTER(COMMON)
③:BASE2
④:COLLECTOR2
⑤:COLLECTOR1
JEITA:−
JEDEC:−
MAXIMUM RATINGS (Ta=25℃)
(Tr1、Tr2)
Symbol
Parameter
Ratings
Unit
VCBO
Collector to Base voltage
-60
V
VEBO
Emitter to Base voltage
-6
V
VCEO
Collector to Emitter voltage
-50
V
I
Collector current
-200
mA
PC
Collector dissipation(Total Ta=25℃)
150
mW
Tj
Junction temperature
+125
℃
Tstg
Storage temperature
-55∼+125
℃
C
MARKING
⑤
④
M ・E
TYPE
ISAHAYA ELECTRONICS CORPORATION
①
② ③
hFE ITEM
RT2A00M
COMPOSITE TRANSISTOR
FOR LOW FREQUENCY AMPLIFY APPLICATION
SILICON PNP EPITAXIAL TYPE
ELECTRICAL CHARACTERISTICS (Ta=25℃)
(Tr1、Tr2)
Symbol
Parameter
Test conditions
Limits
Max
Unit
Min
Typ
-50
-
-
V
-
-
-0.1
μA
V(BR)CEO
Collector to Emitter break down voltage
I C=-100μA,RBE=∞
ICBO
Collector cut off current
VCB=-60V,I E=0mA
IEBO
Emitter cut off current
VEB=-6V,I C=0mA
-
-
-0.1
μA
hFE *
DC forward current gain
VCE=-6V,I C=-1mA
150
-
800
-
hFE
DC forward current gain
VCE=-6V,I C=-0.1mA
90
-
-
-
VCE(sat)
Collector to Emitter saturation voltage
I C=-100mA,I B=-10mA
-
-
-0.3
V
fT
Gain band width product
VCE=-6V,I E=10mA
-
200
-
MHz
Cob
Collector output capacitance
VCB=-6V,I E=0mA,f=1MHz
-
4.0
-
pF
NF
Noise figure
VCE=-6V,I E=0.3mA,f=100Hz,R G=10kΩ
-
-
20
dB
* : It shows hFE classification in right table.
ISAHAYA ELECTRONICS CORPORATION
ITEM
hFE
E
150∼300
F
250∼500
MARKING
M・E
M・F
RT2A00M
COMPOSITE TRANSISTOR
FOR LOW FREQUENCY AMPLIFY APPLICATION
SILICON PNP EPITAXIAL TYPE
COMMON EMITTER OUTPUT
COMMON EMITTER TRANSFER
-50
-50
0.18mA
Ta=25℃
0.14mA
-40
COLLECTOR CURRENT IC(mA)
COLLECTOR CURRENT IC(mA)
0.16mA
0.12mA
0.10mA
-30
0.08mA
0.06mA
-20
0.04mA
-10
0.02mA
-40
Ta=25℃
VCE=-6V
-30
-20
-10
IB=0
-0
-0
-1
-2
-3
-4
-0
-0.0
-5
COLLECTOR EMITTER VOLTAGE VCE(V)
-0.2
-0.4
-0.6
-0.8
BASE TO EMITTER VOLTAGE VBE(V)
GAIN BAND WIDTH PRODUCT
VS. EMITTER CURRENT
DC FORWARD CURRENT GAIN
VS. COLLECTOR CURRENT
250
Ta=25℃
VCE=-6V
100(@IC=-1m
GAIN BAND WIDTH PRODUCT fT(MHz)
RELATIVE VALUE OF DC FORWARD CURRENT
GAIN hFE
10000
1000
100
10
1
-0.1
Ta=25℃
VCE=-6V
200
150
100
50
0
-1
-10
-100
COLLECTOR CURRENT IC(mA)
-1000
0.1
1
10
EMITTER CURRENT IE(mA)
COLLECTOR OUTPUT CAPACITANCE
VS. COLLECTOR TO BASE VOLTAGE
100
COLLECTOR OUTPUT CAPACITANCE Cob(pF)
-1.0
Ta=25℃
IE=0
f=1MHz
10
1
0.1
-0.1
-1
-10
COLLECTOR TO BASE VOLTAGE VCB(V)
-100
ISAHAYA ELECTRONICS CORPORATION
100
Marketing division, Marketing planning department
6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan
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there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or
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mishap.
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Jan.2003