ISAHAYA RT3T1CU

RT3T1CU
Composite Transistor With Resistor
For Switching Application
Silicon Epitaxial Type
OUTLINE DRAWING
DESCRIPTION
RT3T1CU
is
a
composite
transistor
built
Unit:mm
1.6 ±0.05
with
RT1N141 chip and RT1P136 chip in USM6F package.
1.2 ±0.05
1pin マーク
6
(0.5)
FEATURE
Silicon epitaxial type
1
0.5
Each transistor elements are independent.
1.6
±0.05
Mini package for easy mounting
(0.95)
1. 0
2
0.5
5
0.2 ±0.05
(0.5)
APPLICATION
3
Inverted circuit, switching circuit,
4
(Φ0.1 ~0.2)
interface circuit, driver circuit
0.12
±0.05
0.5
±0.05
※PNP built in transistor of ”-”sign is abbreviation.
⑥
TERMINAL
CONNECTOR
①:EMITTER1
②:BASE1
③:COLLECTOR2
④:EMITTER2
⑤:BASE2
⑥:COLLECTOR1
④
⑤
R1
RTr1
R2
R2
①
R1
②
RTr2
JEITA:-
ISAHAYA:USM6F
③
MAXIMUM RATING (Ta=25℃)
SYMBOL
PARAMETER
RATING
UNIT
50
V
10
V
VCBO
Collector to Base voltage
VEBO
Emitter to Base voltage
6
V
VCEO
Collector to Emitter voltage
50
V
IC
Collector current
100
mA
ICM
Peak Collector current
200
mA
PC
Collector dissipation(Total, Ta=25℃)
125
mW
Tj
Junction temperature
+150
℃
Tstg
Storage temperature
-55~+150
℃
Tr1
Tr2
MARKING
ISAHAYA ELECTRONICS CORPORATION
6
5
4
1C
1
2
3
RT3T1CU
Composite Transistor With Resistor
For Switching Application
Silicon Epitaxial Type
ELECTRICAL CHARACTERISTICS (Ta=25℃)
Symbol
Parameter
V(BR)CEO
Collector to Emitter break down voltage
ICBO
Collector cut off current
Min
I C=100µA,RBE=∞
Typ
DC forward current gain
VCE(sat)
Collector to Emitter saturation voltage
VI(ON)
Input on voltage
VI(OFF)
Input off voltage
R1
Input resistor
R2/R1
Resistor ratio
fT
Gain band width product
TYPICAL CHARACTERISTICS
Tr1
Tr2
Tr1
Tr2
Tr1
Tr2
Tr1
Tr2
Tr1
Tr2
Tr1
Tr2
Tr1
Tr2
Unit
V
0.1
VCE=5V,I C=10mA
VCE=5V,I C=5mA
µA
50
33
0.1
I C=10mA,I B=0. 5mA
1.5
0.7
1.1
0.6
10
1.0
1.0
10
200
150
VCE=0.2V,I C=5mA
0.8
0.4
7.0
0.7
0.9
8
VCE=5V,I C=100µA
VCE=6V,I E=10mA
0.3
0.3
3.0
1.2
V
V
V
13
1.3
1.1
12
KΩ
MHZ
(Tr1)
INPUT ON VOLTAGE
VS. COLLECTOR CURRENT
DC FORWARD CURRENT GAIN
VS. COLLECTOR CURRENT
1000
100
VCE=0.2V
DC FORWARD CURRENT GAIN hFE
VCE=5V
10
100
10
1
1
10
100
1
10
COLLECTOR CURRENT IC(mA)
COLLECTOR CURRENT IC(mA)
COLLECTOR CURRENT
VS. INPUT OFF VOLTAGE
1000
VCE=5V
COLLECTOR CURRENT IC(mA)
Max
50
VCB=50V,I E =0mA
hFE
INPUT ON VOLTAGE VI(ON)(V)
Limits
Test conditions
100
10
0.0
0.4
0.8
1.2
1.6
2.0
INPUT OFF VOLTAGE VI(OFF)(V)
ISAHAYA ELECTRONICS CORPORATION
100
PRELIMINARY
RT3T1CU
Composite Transistor With Resistor
For Switching Application
Silicon Epitaxial Type
IN P U T ON V OL TA GE
V S. C OL L EC TOR C U R R E N T
D C F OR W A R D C U R R E N T GA IN
V S. C OL L E C TOR C U R R E N T
-10
DC FORWARD CURRENT GAIN hFE
INPUT ON VOLTEGE VI(ON)(V)
TYPICAL CHARACTERISTICS ( Tr2 )
1000
VCE=-0.2V
-1
-0.1
-1
-10
-100
COLLECTOR CURRENT I C(mA)
VCE=-5V
100
10
-1
-10
-100
COLLECTOR CURRENT IC(mA)
COLLECTOR CURRENT IC(μA)
C OL L E C TOR C U R R E N T
V S. IN P U T OF F V OL TA G E
-1000
VCE=-5V
-100
-10
0
-0.4
-0.8
-1.2
-1.6
INPUT OFF VOLTAGE VI(OFF) (V)
-2
ISAHAYA ELECTRONICS CORPORATION
Marketing division, Marketing planning department
6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan
Keep safety first in your circuit designs!
·ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but
there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or
property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures
such as (1) placement of substitutive, auxiliary, (2) use of non-farmable material or (3) prevention against any malfunction or
mishap.
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herein.
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under circumstances in which human life is potentially at stake. Please contact ISAHAYA electronics corporation or an
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Jan.2003