RT3C99M Composite Transistor For Muting Application Silicon Npn Epitaxial Type DESCRIPTION OUTLINE DRAWING Unit：mm RT3C99M is a composite transistor built with two 2.1 2SC5938A chips in SC-88 package. ① ⑥ 0.65 ② ⑤ 0.65 FEATURE ③ ④ Silicon NPN epitaxial type Each transistor elements are independent. 2.0 Mini package for easy mounting 0.2 1.25 APPLICATION 0.13 0～0.1 0.65 0.9 muting circuit、switching circuit TERMINAL CONNECTOR ①：EMITTER1 ②：BASE1 ③：COLLECTOR2 ④：EMITTER2 ⑤：BASE2 ⑥:COLLECTOR1 Tr1 Tr2 JEITA：SC-88 MARKING MAXIMUM RATING (Ta=25℃) SYMBOL PARAMETER RATING UNIT VCBO Collector to Base voltage 50 V VEBO Emitter to Base voltage 40 V VCEO Collector to Emitter voltage 20 V IC Collector current 200 mA Collector dissipation（Ta=25℃） 150 mW PC（Total） Tj Junction temperature ＋125 ℃ Tstg Storage temperature -55～＋125 ℃ ISAHAYA ELECTRONICS CORPORATION 6 5 4 .C９９ １ 2 3 RT3C99M Composite Transistor For Muting Application Silicon Npn Epitaxial Type ELECTRICAL CHARACTERISTICS (Ta=25℃) Symbol Parameter Limits Test conditions Min Typ Max Unit ICBO Collector cut off current VCB =50V,IE=0 - - 0.1 μA IEBO Emitter cut off current VEB=40V,IC=0 - - 0.1 μA hFE* DC forward current gain VCE=2V,IC=4mA 200 - 1200 - VCE(sat) Collector to Emitter saturation voltage IC=30mA,IB=3mA - 30 - V fT Gain band width product VCE=6V,IE=-4mA - 30 - MHZ Cob Collector output capacitance VCB=10V,IE=0,f=1MHZ - 5.0 - pF Ron Output On-resistance IB=5mA, f=1MHz - 0.95 - Ω * : It shows hFE classification in right table. Item A B hFE 200～700 350～1200 TYPICAL CHARACTERISTICS (Tr1、Tr2) COMMON EMITTER TRANSFER COMMON EMITTER OUTPUT 50 Ta=25℃ VCE=2V Ta=25℃ 50 COLLECTOR CURRENT IC(mA) COLLECTOR CURRENT IC(mA) 60 300μA 250μA 40 200μA 30 150μA 20 100μA 10 IB=50μA 0 40 30 20 10 0 0 2 4 6 8 COLLECTOR TO EMITTER VOLTAGE VCE(V) 10 0 0.2 0.4 0.6 0.8 BASE TO EMITTER VOLTAGE VBE(V) ISAHAYA ELECTRONICS CORPORATION 1 RT3C99M Composite Transistor For Muting Application Silicon Npn Epitaxial Type DC REVERSE CURRENT GAIN VS. COLLECTOR CURRENT DC FORWARD CURRENT GAIN VS. COLLECTOR CURRENT DC REVERSE CURRENT GAIN hFER DC FORWARD CURRENT GAIN hFE 10000 Ta=25℃ VCE=2V 1000 100 10000 Ta=25℃ VCE=-2V 1000 100 10 -0.1 10 0.1 1 10 100 -1 -10 COLLECTOR CURRENT IC(mA) COLLECTOR CURRENT IC(mA) COLLECTOR TO EMITTER SATURATION VOLTAGE VS. COLLECTOR CURRENT ON RESISTANCE VS. BASE CURRENT 10 1000 Ta=25℃ ON RESISTANCE Ron(Ω) Ta=25℃ IC/IB=10 100 10 1 1 0.1 0.1 0.1 1 10 100 COLLECTOR CURRENT IC(mA) 0.1 1000 1 10 BASE CURRENT 100 IB(mA) COLLECTOR OUTPUT CAPACITANCE VS.COLLECTOR TO BASE VOLTAGE GAIN BAND WIDTH PRODUCT VS. EMITTER CURRENT 100 COLLECTOR OUTPUT CAPACITANCE Cob(pF) 100 GAIN BAND WIDTH PRODUCT (MHz) C TO E SATURATION VOLTAGE VCE(sat)(mV) -100 Ta=25℃ VCE=6V Ta=25℃ IE=0 f=1MHz 10 1 10 -0.1 -1 -10 EMITTER CURRENT IE(mA) -100 0.1 1 10 COLLECTOR TO BASE VOLTAGE ISAHAYA ELECTRONICS CORPORATION 100 VCB(V)