PolarHVTM HiPerFET Power MOSFET VDSS ID25 IXFR 64N60P = = ≤ ≤ RDS(on) trr (Electrically Isolated Back Surface) 600 V 36 A 105 m Ω 200 ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 150° C 600 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ 600 V VGSS Continuous ± 30 V VGSM Transient ± 40 V ID25 TC = 25° C 36 A IDM TC = 25° C, pulse width limited by TJM 150 A IAR TC = 25° C 64 A EAR TC = 25° C 80 mJ EAS TC = 25° C 3.5 J dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤150° C, RG = 2 Ω 20 V/ns PD TC = 25° C 360 W -55 ... +150 150 -55 ... +150 °C °C °C 2500 300 22..130/5..29 V~ °C N/lb 5 g TJ TJM Tstg VISOL TL FC 50/60 Hz, RMS, 1 minute 1.6 mm (0.062 in.) from case for 10 s Mounting force Weight ISOPLUS247 ISOPLUS247 (IXFR) E153432 Isolated back surface G = Gate S = Source D = Drain Features l Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation l International standard packages l Unclamped Inductive Switching (UIS) rated l Low package inductance - easy to drive and to protect Advantages Symbol Test Conditions (TJ = 25° C, unless otherwise specified) Characteristic Values Min. Typ. Max. l BVDSS VGS = 0 V, ID = 3 mA 600 l VGS(th) VDS = VGS, ID = 8 mA 3.0 IGSS VGS = ± 30 VDC, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = IT , Note 1 © 2006 IXYS All rights reserved TJ = 125° C V 5.0 V ± 200 nA 25 1000 µA µA 105 mΩ l Easy to mount Space savings High power density DS99441E(01/06) IXFR 64N60P Symbol Test Conditions Characteristic Values (TJ = 25° C, unless otherwise specified) Min. Typ. Max. gfs VDS = 20 V; ID = IT, Note 1 40 63 S 12 nF 1150 pF 80 pF Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz Crss td(on) 28 ns tr VGS = 10 V, VDS = 0.5 VDSS, ID = IT 23 ns td(off) RG = 1 Ω (External) 79 ns 24 ns 200 nC 70 nC 68 nC tf Qg(on) Qgs VGS = 10 V, VDS = 0.5 VDSS, ID = IT Qgd ISOPLUS247 Outline 0.35 ° C/W RthJC ° C/W 0.15 RthC Source-Drain Diode Characteristic Values (TJ = 25° C, unless otherwise specified) Min. Typ. Max. Symbol Test Conditions IS VGS = 0 V 64 A ISM Repetitive 150 A VSD IF = IS, VGS = 0 V, 1.5 V trr IF = 25A, -di/dt = 100 A/µs 200 ns QRM IRM VR = 100V 0.6 6.0 µC A Notes: 1. Pulse test, t ≤300 µs, duty cycle d ≤ 2 %; 2. Test current IT = 32A. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6,771,478 B2 IXFR 64N60P Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 65 160 V GS = 10V 8V 7V 60 55 V GS = 10V 8V 140 50 120 I D - Amperes I D - Amperes 45 40 35 30 6V 25 7V 100 80 60 20 6V 40 15 10 20 5V 5 5V 0 0 0 1 2 3 4 5 6 7 0 2 4 6 65 12 14 16 18 20 3.1 V GS = 10V 7V 60 55 V GS = 10V 2.8 2.5 R DS(on) - Normalized 50 45 I D - Amperes 10 Fig. 4. R DS(on) Normalized to ID = 32A v s. Junction Temperature Fig. 3. Output Characteristics @ 125ºC 6V 40 35 30 25 20 5V 15 2.2 I D = 64A 1.9 1.6 I D = 32A 1.3 1 10 0.7 5 0 0.4 0 2 4 6 8 10 12 -50 14 -25 V DS - Volts 0 25 50 75 100 125 150 T J - Degrees Centigrade Fig. 5. R DS(on) Normalized to ID = 32A v s. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 3.2 33 3 V GS = 10V 30 TJ = 125ºC 2.8 27 2.6 24 2.4 I D - Amperes R DS(on) - Normalized 8 V DS - Volts V DS - Volts 2.2 2 1.8 1.6 21 18 15 12 9 1.4 6 TJ = 25ºC 1.2 3 1 0.8 0 0 20 40 60 80 I D - Amperes © 2006 IXYS All rights reserved 100 120 140 160 -50 -25 0 25 50 75 T J - Degrees Centigrade 100 125 150 IXFR 64N60P Fig. 8. Transconductance Fig. 7. Input Admittance 100 130 120 90 110 80 100 g f s - Siemens I D - Amperes 70 60 50 TJ = 125ºC 25ºC - 40ºC 40 90 80 TJ = - 40ºC 25ºC 125ºC 70 60 50 40 30 30 20 20 10 10 0 0 3.5 4 4.5 5 5.5 6 6.5 7 0 10 20 30 V GS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode 50 70 80 90 100 160 180 200 10 V DS = 300V 9 120 I D = 32A 8 100 I G = 10mA V GS - Volts 7 80 60 TJ = 125ºC 6 5 4 3 40 TJ = 25ºC 2 20 1 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 0 20 40 V SD - Volts 60 80 100 120 140 Q G - NanoCoulombs Fig. 12. Forward-Bias Safe Operating Area Fig. 11. Capacitance 100,000 1,000 TJ = 150ºC f = 1 MHz TC = 25ºC C iss Capacitance - PicoFarads 60 Fig. 10. Gate Charge 140 I S - Amperes 40 I D - Amperes RDS(on) Limit I D - Amperes 10,000 1,000 C oss 100 25µs 100µs 10 1ms 100 10ms C rss DC 1 10 0 5 10 15 20 25 30 35 40 V DS - Volts IXYS reserves the right to change limits, test conditions, and dimensions. 10 100 V DS - Volts 1000 Fig. 13. Maximum Transient Thermal Resistance R (th)JC - ºC / W 1.000 0.100 0.010 0.0001 0.001 0.01 Pulse W idth - Seconds © 2006 IXYS All rights reserved 0.1 1 10