IXSR 40N60CD1 IGBT with Diode ISOPLUS247TM VCES IC25 = 600 = 62 = 2.5 = 70 VCE(SAT) tfi(typ) (Electrically Isolated Backside) Short Circuit SOA Capability V A V ns Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C, limited by leads 62 A IC90 TC = 90°C ICM TC = 25°C, 1 ms SSOA (RBSOA) 37 A 150 A VGE = 15 V, TVJ = 125°C, RG = 22 W Clamped inductive load, L = 30 mH ICM = 80 @ 0.8 VCES A tSC (SCSOA) VGE = 15 V, VCE = 360 V, TJ = 125°C RG = 22 W, non repetitive 10 ms PC TC = 25°C 210 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C TJ VISOL 50/60 Hz, RMS t = 1 min 2500 Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Weight PLUS247 V~ 300 °C 5 g ISOPLUS 247TM (IXSR) E 153432 G G = Gate, E = Emitter C E Isolated backside* C = Collector, * Patent pending Features • • • • • DCB Isolated mounting tab Meets TO-247AD package Outline High current handling capability Latest generation HDMOSTM process MOS Gate turn-on - drive simplicity Applications Symbol Test Conditions BVCES IC = 1 mA, VGE = 0 V 600 VGE(th) IC = 4 mA, VCE = VGE 4 ICES VCE = 0.8 • VCES VGE = 0 V IGES VCE = 0 V, VGE = ±20 V VCE(sat) IC Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. TJ = 150°C = IT , VGE = 15 V IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved V 7 V 650 5 mA mA ±100 nA 2.5 V • Uninterruptible power supplies (UPS) • Switched-mode and resonant-mode power supplies • AC motor speed control • DC servo and robot drives • DC choppers Advantages • Easy assembly • High power density • Very fast switching speeds for high frequency applications 98673A (7/00) 1-2 IXSR 40N60CD1 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs IC = IT; VCE = 10 V, Pulse test, t £ 300 ms, duty cycle £ 2 % C ies Coes VGS = 0 V, VDS ,25 V, = f = 1 MHz C res Qg Qge IC = IT, VGE = 15 V, VCE = 0.5 VCES Qgc 16 23 S 3700 pF 440 pF 60 pF 190 nC 45 nC 88 nC td(on) Inductive load, TJ = 25°C 50 ns t ri IC = IT, VGE = 15 V, L = 100 mH, VCE = 0.8 VCES, RG = Roff = 2.7 W 50 ns td(off) tfi Eoff td(on) t ri Eon td(off) tfi Eoff Remarks: Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or increased RG Inductive load, TJ = 125°C IC = IT, VGE = 15 V, L = 100 mH VCE = 0.8 VCES, RG = Roff = 2.7 W Remarks: Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or increased RG RthJC RthCK Reverse Diode (FRED) 140 ns 70 120 ns 1.0 1.7 mJ 50 ns 50 ns 2.2 mJ 140 ns 140 ns 1.7 mJ 0.15 0.6 K/W K/W 1 Gate, 2 Drain (Collector) 3 Source (Emitter) 4 no connection Dim. Millimeter Min. Max. A 4.83 5.21 A1 2.29 2.54 A2 1.91 2.16 b 1.14 1.40 1.91 2.13 b1 b2 2.92 3.12 C 0.61 0.80 D 20.80 21.34 E 15.75 16.13 e 5.45 BSC L 19.81 20.32 L1 3.81 4.32 Q 5.59 6.20 R 4.32 4.83 S 13.21 13.72 T 15.75 16.26 U 1.65 3.03 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 .244 .170 .190 .520 .540 .620 .640 .065 .080 Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol Test Conditions VF IF = IT, VGE = 0 V, Pulse test £ 300 ms, duty cycle d £ 2 % IRM t rr IF = IT, VGE = 0 V, -diF/dt = 100 A/ms VR = 100 V IF = 1 A; -di/dt = 200 A/ms; VR = 30 V RthJC 70 ISOPLUS 247 (IXSR) OUTLINE 2 35 1.8 V 2.5 A ns 1.15 K/W Note: 1. IT = 40A © 2000 IXYS All rights reserved IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 2-2