High Voltage MOSFET N-Channel, Depletion Mode IXTP 01N100D IXTU 01N100D IXTY 01N100D VDSS = 1000 V ID25 = 100 mA Ω RDS(on) = 110 Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSX TJ = 25°C to 150°C 1000 V VDGX TJ = 25°C to 150°C 1000 V VGS Continuous ± 20 V VGSM Transient ± 30 V IDSS TC = 25°C; TJ = 25°C to 150°C 100 mA IDM TC = 25°C, pulse width limited by TJ 400 mA PD TC = 25°C TA = 25°C 25 1.1 W W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C TJ TL 1.6 mm (0.063 in.) from case for 10 s 300 °C TISOL Plastic case for 10 s (IXTU) 300 °C Md Mounting torque TO-220 1.3 / 10 Nm/lb. TO-220 TO-251 TO-252 4 0.8 0.8 g g g Weight TO-220 (IXTP) G D (TAB) DS TO-251 (IXTU) G D D (TAB) S TO-252 (IXTY) G S D (TAB) Pins: 1 - Gate 2 - Drain 3 - Source TAB - Drain Symbol Test Conditions (TJ = 25°C, unless otherwise specified) Characteristic Values min. typ. max. VDSX VGS = -10 V, ID = 25 μA 1000 VGS(off) VDS = 25V, ID = 25 μA -2.5 IGSS VGS = ± 20 VDC, VDS = 0 IDSX(off) VDS = VDSX, VGS = -10 V RDS(on) VGS = 0 V, ID = 50 mA ID(on) VGS = 0 V, VDS = 25V © 2006 IXYS All rights reserved V TJ = 125°C Note 1 Note 1 90 100 Features z Normally ON mode z -5 V z ±100 nA z 10 250 μA μA 110 Ω mA Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Fast switching speed Applications z Level shifting z Triggers z Solid state relays z Current regulators 98809B (01/06) IXTP 01N100D Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs VDS = 50 V; ID = 100 mA Note1 100 Ciss Coss VGS = -10 V, VDS = 25 V, f = 1 MHz Crss 150 mS 120 pF 25 pF 5 pF td(on) VDS = 100 V V, ID = 50 mA 8 ns tr VGS = 0 V to -10 6 ns td(off) RG 30 ns 51 ns = 30Ω (External) tf RthJC 5 RthCS TO-220 0.25 Source-Drain Diode K/W Pins: 1 - Gate 3 - Source 2 - Drain TAB - Drain K/W Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. VSD VGS = -10 V, IF = 100 mA Note1 trr IF = 0.75 A, -di/dt = 10 A/μs, VDS = 25 V, VGS = -10V 1.0 TO-220 AD Outline 1.5 V 1.5 μs TO-251 AA Outline Note1: Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 % TO-252 AA Outline Dim. Pins: 1 - Gate 3 - Source A A1 A2 b b1 b2 c c1 D D1 E E1 e e1 H L L1 L2 L3 2 - Drain TAB - Drain Millimeter Min. Max. Inches Min. Max. 2.19 2.38 0.89 1.14 0 0.13 0.64 0.89 0.76 1.14 5.21 5.46 0.46 0.58 0.46 0.58 5.97 6.22 4.32 5.21 6.35 6.73 4.32 5.21 2.28 BSC 4.57 BSC 9.40 10.42 0.51 1.02 0.64 1.02 0.89 1.27 2.54 2.92 0.086 0.094 0.035 0.045 0 0.005 0.025 0.035 0.030 0.045 0.205 0.215 0.018 0.023 0.018 0.023 0.235 0.245 0.170 0.205 0.250 0.265 0.170 0.205 0.090 BSC 0.180 BSC 0.370 0.410 0.020 0.040 0.025 0.040 0.035 0.050 0.100 0.115 Pins: 1 - Gate 3 - Source 2 - Drain TAB - Drain Dim. Millimeter Min. Max. Inches Min. Max. A A1 2.19 0.89 2.38 1.14 .086 0.35 .094 .045 b b1 b2 0.64 0.76 5.21 0.89 1.14 5.46 .025 .030 .205 .035 .045 .215 c c1 0.46 0.46 0.58 0.58 .018 .018 .023 .023 D 5.97 6.22 .235 .245 E e e1 6.35 2.28 4.57 6.73 BSC BSC .250 .090 .180 .265 BSC BSC H 17.02 17.78 .670 .700 L L1 L2 L3 8.89 1.91 0.89 1.15 9.65 2.28 1.27 1.52 .350 .075 .035 .045 .380 .090 .050 .060 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or moreof the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692