Preliminary Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBH32N300 IXBT32N300 VCES = 3000V IC110 = 32A VCE(sat) ≤ 3.2V TO-247 (IXBH) Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 3000 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 3000 V VGES Continuous ± 20 V VGEM Transient ± 30 V IC25 IC110 ICM TC = 25°C TC = 110°C TC = 25°C, 1ms 80 32 280 A A A SSOA (RBSOA) VGE = 15V, TVJ = 125°C, RG = 10Ω Clamped Inductive Load ICM = 80 VCES ≤ 2400 A V PC TC = 25°C 400 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C 300 260 °C °C 1.13/10 Nm/lb.in. 6 4 g g TJ TL TSOLD 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10 seconds Md Mounting Torque (TO-247) Weight TO-247 TO-268 G G IC = 250μA, VGE = 0V 3000 VGE(th) IC = 250μA, VCE = VGE 2.5 ICES VCE = 0.8 • VCES, VGE = 0V IGES VCE = 0V, VGE = ± 20V VCE(sat) IC = 32A, VGE = 15V, Note 1 V 5.0 C (TAB) G = Gate E = Emitter 2.8 TJ = 125°C 3.5 z z z z High Blocking Voltage International Standard Packages Low Conduction Losses Low Gate Drive Requirement High Power Density Applications: z ±100 nA 3.2 V z V z z z © 2009 IXYS CORPORATION, All Rights Reserved C = Collector TAB = Collector Features V 50 μA 2 mA TJ = 125°C E Advantages Characteristic Values Min. Typ. Max. BVCES C (TAB) E TO-268 (IXBT) z Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) C Switched-Mode and Resonant-Mode Power Supplies Uninterruptible Power Supplies (UPS) Laser Generators Capacitor Discharge Circuits AC Switches DS100118(02/09) IXBH32N300 IXBT32N300 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) gfS Characteristic Values Min. Typ. Max. IC = 32A, VCE = 10V, Note 1 16 TO-247 (IXBH) Outline 26 S 3140 pF 124 pF Cres 40 pF Qg 142 nC Cies Coes Qge VCE = 25V, VGE = 0V, f = 1MHz 20 nC Qgc 57 nC td(on) 50 ns 185 ns 160 ns 720 ns 58 ns 515 ns 165 ns 630 ns tr td(off) tf td(on) tr td(off) tf IC = 32A, VGE = 15V, VCE = 1000V Resistive Switching Times, TJ = 25°C IC = 32A, VGE = 15V VCE = 1250V, RG = 2Ω Resistive Switching Times, TJ = 125°C IC = 32A, VGE = 15V VCE = 1250V, RG = 2Ω RthJC RthCS 0.31 (TO-247) 0.21 °C/W °C/W Reverse Diode 1 2 ∅P 3 e Terminals: 1 - Gate 3 - Source Dim. Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 2.2 2.6 A2 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC 2 - Drain Tab - Drain Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC TO-268 (IXBT) Outline Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. VF IF = 32A, VGE = 0V 2.1 V trr IF = 16A, VGE = 0V, -diF/dt = 100A/μs 1.5 μs IRM VR = 100V, VGE = 0V 33 A Note 1: Pulse Test, t ≤ 300μs, Duty Cycle, d ≤ 2%. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXBH32N300 IXBT32N300 Fig. 1. Output Characteristics @ 25ºC 65 Fig. 2. Extended Output Characteristics @ 25ºC 500 VGE = 25V 20V 15V 60 55 350 IC - Amperes 45 IC - Amperes 20V 400 50 40 10V 35 30 25 20 15V 300 250 200 10V 150 15 100 10 50 5V 5 0 5V 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 4.0 2 4 6 8 10 12 14 16 VCE - Volts VCE - Volts Fig. 3. Output Characteristics @ 125ºC Fig. 4. Dependence of VCE(sat) on Junction Temperature 65 55 18 20 1.9 VGE = 25V 20V 15V 60 1.8 VGE = 15V 1.7 50 VCE(sat) - Normalized 1.6 45 IC - Amperes VGE = 25V 450 40 10V 35 30 25 20 15 I 1.5 C = 64A 1.4 1.3 I C = 32A 1.2 1.1 1.0 0.9 10 5 I C = 16A 0.8 5V 0.7 0 0.6 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 -50 -25 0 25 VCE - Volts 50 75 100 125 150 TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage Fig. 6. Input Admittance 90 6.0 80 TJ = 25ºC 5.5 70 5.0 IC - Amperes VCE - Volts 60 4.5 I 4.0 C = 64A 3.5 32A 3.0 50 40 TJ = 125ºC 25ºC - 40ºC 30 20 10 2.5 16A 0 2.0 5 7 9 11 13 15 17 19 21 VGE - Volts © 2009 IXYS CORPORATION, All Rights Reserved 23 25 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 VGE - Volts IXYS REF: B_32N300(8P)03-02-09 IXBH32N300 IXBT32N300 Fig. 8. Forward Voltage Drop of Intrinsic Diode Fig. 7. Transconductance 100 45 TJ = - 40ºC 40 90 80 35 70 30 125ºC IF - Amperes g f s - Siemens 25ºC 25 20 15 60 TJ = 25ºC 50 TJ = 125ºC 40 30 10 20 5 10 0 0 0 10 20 30 40 50 60 70 80 90 100 0.0 0.5 1.0 1.5 2.5 3.0 Fig. 10. Capacitance Fig. 9. Gate Charge 10,000 16 f = 1 MHz VCE = 1kV 14 I C = 32A Capacitance - PicoFarads I G = 10mA 12 VGE - Volts 2.0 VF - Volts IC - Amperes 10 8 6 4 Cies 1,000 Coes 100 2 Cres 0 10 0 20 40 60 80 100 120 0 140 5 10 15 20 25 30 35 40 VCE - Volts QG - NanoCoulombs Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Reverse-Bias Safe Operating Area 90 1.000 80 70 Z(th)JC - ºC / W IC - Amperes 60 50 40 30 20 10 0 500 0.100 0.010 TJ = 125ºC RG = 10Ω dV / dt < 10V / ns 1000 1500 2000 2500 3000 0.001 0.00001 VCE - Volts IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions. 0.0001 0.001 0.01 0.1 Pulse Width - Seconds 1 10 IXBH32N300 IXBT32N300 Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature Fig. 14. Resistive Turn-on Rise Time vs. Drain Current 800 800 RG = 2Ω 700 VCE = 1250V VGE = 15V VCE = 1250V 600 I 500 C t r - Nanoseconds t r - Nanoseconds 600 RG = 2Ω 700 VGE = 15V = 32A 400 I 300 C = 64A TJ = 125ºC 500 400 300 200 200 100 100 TJ = 25ºC 0 0 25 35 45 55 65 75 85 95 105 115 15 125 20 25 30 35 TJ - Degrees Centigrade Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance td(on) - - - - 450 60 I C = 64A 400 t f - Nanoseconds t r - Nanoseconds 65 I C = 32A t d(on) - Nanoseconds 500 VCE = 1250V 6 7 8 9 10 11 12 13 14 700 170 600 500 150 140 I C = 64A 200 25 15 35 45 RG = 2Ω, VGE = 15V 210 VCE = 1250V 200 t f - Nanoseconds td(off) - - - - 1000 190 900 180 800 170 700 160 600 150 500 140 TJ = 125ºC, 25ºC 130 300 120 200 110 30 35 40 45 85 95 105 115 120 125 50 55 60 IC - Amperes © 2009 IXYS CORPORATION, All Rights Reserved 65 1000 450 tf 900 td(off) - - - - 400 TJ = 125ºC, VGE = 15V VCE = 1250V 800 t f - Nanoseconds 1200 25 75 350 700 300 600 250 I C = 32A 500 200 I C = 64A 400 150 300 100 200 t d(off) - Nanoseconds tf 220 t d(off) - Nanoseconds 230 1300 20 65 Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance 1400 15 55 130 TJ - Degrees Centigrade Fig. 17. Resistive Turn-off Switching Times vs. Drain Current 400 160 I C = 32A RG - Ohms 1100 180 300 50 5 65 190 400 55 350 td(off) - - - - RG = 2Ω, VGE = 15V 800 70 4 60 t d(off) - Nanoseconds VCE = 1250V 550 3 55 200 tf 900 75 TJ = 125ºC, VGE = 15V 2 50 1000 80 tr 45 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature 650 600 40 IC - Amperes 50 2 3 4 5 6 7 8 9 10 11 12 13 14 15 RG - Ohms IXYS REF: B_32N300(8P)03-02-09