Preliminary Technical Information PolarHTTM IGBT with Diode VCES IC25 VCE(sat) tfi(typ) IXGR48N60C3D1 (Electrically Isolated Back Surface) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 56 A IC110 TC = 110°C 26 A ID110 TC = 110°C 27 A ICM TC = 25°C, 1ms 200 A IA TC = 25°C 30 A EAS TC = 25°C 300 mJ SSOA VGE = 15V, TVJ = 125°C, RG = 3Ω ICM = 100 A (RBSOA) Clamped inductive load @ VCE ≤ 600V PC TC = 25°C 125 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C TJ ISOPLUS 247TM (IXGR) TL 1.6mm (0.062 in.) from case for 10s 300 °C TSOLD Plastic body for 10 seconds 260 °C VISOL 50/60 Hz RMS, t = 1min 2500 V~ FC Mounting Force 20..120 / 4.5..25 N/lb. 5 g Weight Symbol Test Conditions BVCES VGE(th) IC IC ICES VCE = VCES VGE = 0V IGES VCE = 0V, VGE = ±20V VCE(sat) IC Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. = 250μA, VGE = 0V = 250μA, VCE = VGE 600 3.0 5.0 V V 100 μA ±100 = 30A, VGE = 15V TJ = 125°C 2.2 1.7 2.7 = 600V = 56A ≤ 2.7V = 38ns G C G = Gate E = Emitter E ISOLATED TAB C = Collector Features • DCB Isolated mounting tab • Meets TO-247AD package outline • High current handling capability • Fast switching • Avalanche Rated Applications • Switch-mode and resonant-mode power supplies • Uninterruptible power supplies (UPS) • DC choppers • AC motor speed control • DC servo and robot drives Advantages • Space savings • Easy assembly • High power density • Very fast switching speeds for high frequency applications nA V V DS99810A(07/07) © 2007 IXYS CORPORATION, All rights reserved IXGR48N60C3D1 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. gfs IC = 30A; VCE = 10V, Note 1 20 Cies Coes Cres VCE = 25V, VGE = 0V, f = 1MHz Qg Qge Qgc IC = 30A, VGE = 15V, VCE = 0.5 • VCES td(on) tri Eon Inductive load, TJ = 25°C ISOPLUS247 (IXGR) Outline 30 S 2530 175 68 pF pF pF 77 16 32 nC nC nC 19 ns 26 0.41 ns mJ IC = 30A, VGE = 15V 60 100 ns VCE = 400V, RG = 3Ω 38 60 ns Eoff 0.23 0.55 mJ td(on) tri Eon td(off) tfi Eoff 19 26 0.65 92 95 0.57 td(off) tfi Inductive load, TJ = 125°C IC = 30A, VGE = 15V VCE = 400V, RG = 3Ω RthJC RthCS ns ns mJ ns ns mJ 1.0 0.15 Reverse Diode (FRED) °C/W °C/W Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. Symbol Test Conditions VF IF = 30A, VGE = 0V, Note 1 IRM trr trr IF = 30A, VGE = 0V, -diF/dt =100A/μs, VR = 100V IF = 1A; -di/dt = 100A/μs; VR = 30V TJ =25°C TJ = 100°C TJ =100°C RthJC RthCS 2.7 V 4 A ns ns 100 25 0.15 1.5 °C/W °C/W Note 1: Pulse test, t ≤ 300 ms, duty cycle, d ≤ 2 % PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXGR48N60C3D1 Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 60 300 VGE = 15V 13V 11V 55 50 270 V GE = 15V 240 13V 210 40 IC - Amperes IC - Amperes 45 35 30 9V 25 20 180 150 11V 120 90 9V 15 60 10 7V 5 30 7V 0 0 0 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7 0 3 2 4 6 10 12 14 16 18 20 Fig. 4. Dependence of VCE(sat) on Junction Temperature Fig. 3. Output Characteristics @ 125ºC 60 1.2 VGE = 15V 13V 11V 55 50 VGE = 15V 1.1 VCE(sat) - Normalized 45 9V 40 IC - Amperes 8 VCE - Volts VCE - Volts 35 30 25 20 15 I C = 60A 1.0 0.9 I C = 30A 0.8 0.7 7V 10 0.6 I C = 15A 5 0 0.5 0 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7 3 25 50 VCE - Volts 75 100 125 150 TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage Fig. 6. Input Admittance 5.0 100 TJ = 25ºC 90 4.5 80 70 IC - Amperes VCE - Volts 4.0 I C = 60A 30A 15A 3.5 3.0 60 TJ = -125ºC 25ºC - 40ºC 50 40 30 20 2.5 10 2.0 0 7 8 9 10 11 12 VGE - Volts © 2007 IXYS CORPORATION, All rights reserved 13 14 15 5 5.5 6 6.5 7 7.5 VGE - Volts 8 8.5 9 9.5 10 IXGR48N60C3D1 Fig. 7. Transconductance Fig. 8. Gate Charge 50 16 TJ = - 40ºC 45 VCE = 300V 14 I C = 30A 40 I G = 10 mA 12 25ºC 30 VGE - Volts g f s - Siemens 35 125ºC 25 20 10 8 6 15 4 10 2 5 0 0 0 10 20 30 40 50 60 70 80 90 100 110 120 0 10 20 I C - Amperes Fig. 9. Capacitance 40 50 60 70 80 Fig. 10. Reverse-Bias Safe Operating Area 110 10,000 100 f = 1 MHz 90 Cies 80 1,000 IC - Amperes Capacitance - PicoFarads 30 QG - NanoCoulombs Coes 100 Cres 70 60 50 40 30 TJ = 125ºC 20 RG = 3Ω dV / dT < 10V / ns 10 10 0 0 5 10 15 20 25 30 35 40 200 250 300 350 VCE - Volts 400 450 500 550 600 650 VCE - Volts Fig. 11. Maxim u m Tran sient Th erm al Im ped an c e Z(th)JC - ºC / W 10.00 1.00 0.10 0.01 0.00001 0.0001 0.001 0.01 P uls e W id th - S e c o nd s IXYS reserves the right to change limits, test conditions, and dimensions. 0.1 1 10 IXGR48N60C3D1 Fig. 12. Inductive Switching Energy Loss vs. Gate Resistance Fig. 13. Inductive Swiching Energy Loss vs. Collector Current 2.6 2.0 2.2 Eoff --- 2.4 1.8 2.0 TJ = 125ºC , VGE = 15V 2.2 2.4 VCE = 400V 2.0 E off 1.6 1.0 1.2 0.8 1.0 I C = 30A 0.6 1.4 1.4 1.2 1.2 1.0 1.0 TJ = 125ºC, 25ºC 0.8 0.8 0.6 0.6 0.4 0.4 0.2 0.2 0.8 0.4 0.6 I C = 15A 0.2 0.4 0.0 0.0 0.2 0 5 10 15 20 25 30 0.0 15 35 20 25 30 RG - Ohms ---- I C = 60A RG = 3Ω , VGE = 15V 1.6 2.0 130 1.8 125 1.6 VCE = 400V 45 50 55 60 1.2 1.2 1.0 1.0 0.6 - MilliJoules 0.8 I C = 30A on 0.8 0.6 350 325 120 td(off) - - - TJ = 125ºC, VGE = 15V 115 VCE = 400V 275 tf 110 250 I C = 60A 105 0.4 0.2 225 100 200 I C = 30A 95 175 90 150 I C = 15A 85 0.4 300 125 80 100 0.2 75 75 0.0 125 70 t d(off) - Nanoseconds 1.4 E 1.4 t f - Nanoseconds 1.8 Eon 40 Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance 2.0 Eoff 35 I C - Amperes Fig. 14. Inductive Swiching Energy Loss vs. Junction Temperature Eoff - MilliJoules - MilliJoules 1.4 1.6 V CE = 400V on 1.2 - MilliJoules 1.6 on 1.4 1.8 E 1.8 I C = 60A E 1.6 ---- Eon RG = 3Ω , VGE = 15V 2.0 Eoff - MilliJoules 1.8 Eoff - MilliJoules Eon - I C = 15A 0.0 25 35 45 55 65 75 85 95 105 115 50 0 5 10 140 110 70 75 60 70 50 65 40 60 TJ = 25ºC 50 25 30 35 40 120 100 100 90 I C = 60A 80 80 I C = 30A 60 70 I C = 15A 40 60 55 20 20 V CE = 400V t f - Nanoseconds 80 110 RG = 3Ω , VGE = 15V 45 I C - Amperes © 2007 IXYS CORPORATION, All rights reserved 50 55 60 20 25 35 45 55 65 75 85 95 TJ - Degrees Centigrade 105 115 50 125 t d(off) - Nanoseconds 85 TJ = 125ºC 80 15 120 140 t d(off) - Nanoseconds 95 90 30 35 td(off) - - - - tf 100 100 90 30 160 105 VCE = 400V 110 t f - Nanoseconds td(off) - - - - RG = 3Ω , VGE = 15V 120 25 Fig. 17. Inductive Turn-off Switching Times vs. Junction Temperature Fig. 16. Inductive Turn-off Switching Times vs. Collector Current tf 20 RG - Ohms TJ - Degrees Centigrade 130 15 IXGR48N60C3D1 Fig. 19. Inductive Turn-on Switching Times vs. Collector Current Fig. 18. Inductive Turn-on Switching Times vs. Gate Resistance 140 50 100 40 I C = 60A 80 35 60 30 40 25 20 20 25 td(on) - - - - tr 90 RG = 3Ω , VGE = 15V 24 80 VCE = 400V 25ºC < TJ < 125ºC 23 70 22 60 21 50 20 40 19 30 18 20 17 10 16 I C = 15A, 30A 0 15 0 5 10 15 20 25 30 0 35 Fig. 20. Inductive Turn-on Switching Times vs. Junction Temperature 80 25 70 24 I C = 60A t r - Nanoseconds RG = 3Ω , VGE = 15V 50 22 VCE = 400V 40 21 I C = 30A 30 20 20 19 10 18 I C = 15A 0 25 35 45 55 65 75 85 95 105 t d(on) - Nanoseconds 23 td(on) - - - - tr 20 25 30 35 40 45 I C - Amperes RG - Ohms 60 15 15 115 17 125 TJ - Degrees Centigrade IXYS reserves the right to change limits, test conditions, and dimensions. 50 55 60 t d(on) - Nanoseconds 100 t d(on) - Nanoseconds VCE = 400V t r - Nanoseconds 26 45 TJ = 125ºC, VGE = 15V t r - Nanoseconds 120 110 td(on) - - - - tr