Advance Technical Information IXTK200N10L2 IXTX200N10L2 Linear L2TM Power MOSFET w/ Extended FBSOA VDSS ID25 = 100V = 200A Ω < 11mΩ RDS(on) N-Channel Enhancement Mode Guaranteed FBSOA Avalanche Rated TO-264 (IXTK) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 100 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 100 V VGSS Continuous ±20 V VGSM Transient ±30 V ID25 ILRMS IDM TC = 25°C (Chip Capability) Lead Current Limit, (RMS) TC = 25°C, Pulse Width Limited by TJM 200 160 500 A A A IA EAS TC = 25°C TC = 25°C 100 5 A J PD TC = 25°C 1040 W -55...+150 °C TJM 150 °C Tstg -55...+150 °C TJ G D Tab S PLUS247(IXTX) G D G = Gate S = Source TL 1.6mm (0.063 in.) from Case for 10s 300 °C TSOLD Plastic Body for 10s 260 °C Md FC Mounting Torque (IXTK) Mounting Force (IXTX) 1.13/10 20..120 / 4.5..27 Nm/lb.in. N/lb. z Weight TO-264 PLUS247 10 6 g g z Tab S D = Drain Tab = Drain Features z Designed for Linear Operation Avalanche Rated Guaranteed FBSOA at 75°C Advantages z z z Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 1mA 100 VGS(th) VDS = VGS, ID = 3mA 2.0 IGSS VGS = ±20V, VDS = 0V ±200 nA IDSS VDS = VDSS, VGS = 0V 10 250 μA μA RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 TJ = 125°C © 2010 IXYS CORPORATION, All Rights Reserved V 4.5 V Easy to Mount Space Savings High Power Density Applications z z z z z Solid State Circuit Breakers Soft Start Controls Linear Amplifiers Programmable Loads Current Regulators 11 mΩ DS100239(2/10) IXTK200N10L2 IXTX200N10L2 Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 55 VDS= 10V, ID = 60A, Note 1 73 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) Resistive Switching Times tr VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 td(off) RG = 1Ω (External) tf Qg(on) Qgs VGS= 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd TO-264 (IXTK) Outline 90 S 23 nF 3200 pF 610 pF 40 ns 225 ns 127 ns 27 ns 540 nC Dim. 115 nC 226 nC A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T RthJC 0.12 °C/W RthCS 0.15 °C/W Safe-Operating-Area Specification Symbol Test Conditions Characteristic Values Min. Typ. Max. SOA VDS = 100V, ID = 6.25A, TC = 75°C, tp = 5s 625 W 1 - Gate 2 - Drain 3 - Source 4 - Drain Millimeter Min. Max. 4.82 5.13 2.54 2.89 2.00 2.10 1.12 1.42 2.39 2.69 2.90 3.09 0.53 0.83 25.91 26.16 19.81 19.96 5.46 BSC 0.00 0.25 0.00 0.25 20.32 20.83 2.29 2.59 3.17 3.66 6.07 6.27 8.38 8.69 3.81 4.32 1.78 2.29 6.04 6.30 1.57 1.83 Inches Min. Max. .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072 PLUS 247TM (IXTX) Outline Source-Drain Diode Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V 200 A ISM Repetitive, Pulse Width Limited by TJM 800 A VSD IF = 100A, VGS = 0V, Note 1 1.4 V trr IRM QRM IF = 100A, -di/dt = 100A/μs, VR = 50V, VGS = 0V Note 245 24.4 3.0 ns A μC Terminals: 1 - Gate 2 - Drain 3 - Source Dim. 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. A A1 A2 b b1 b2 C D E e L L1 Q R Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 0.244 .170 .190 IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTK200N10L2 IXTX200N10L2 Fig. 1. Output Characteristics @ T J = 25ºC Fig. 2. Extended Output Characteristics @ T J = 25ºC 200 350 VGS = 20V 14V 12V 10V 180 160 VGS = 20V 300 8V ID - Amperes ID - Amperes 250 8V 140 12V 10V 120 7V 100 80 60 200 150 7V 100 6V 40 50 6V 20 4V 0 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 2 4 6 8 200 18 VGS = 10V R DS(on) - Normalized ID - Amperes 16 2.4 140 120 8V 100 80 60 14 2.8 VGS = 20V 14V 12V 10V 160 12 Fig. 4. RDS(on) Normalized to ID = 100A Value vs. Junction Temperature Fig. 3. Output Characteristics @ T J = 125ºC 180 10 VDS - Volts VDS - Volts 6V 40 2.0 I D = 200A 1.6 I D = 100A 1.2 0.8 20 4V 0 0.4 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 -50 4.0 -25 0 50 75 100 125 150 125 150 Fig. 6. Maximum Drain Current vs. Case Temperature Fig. 5. RDS(on) Normalized to ID = 100A Value vs. Drain Current 180 2.4 VGS = 10V 2.2 20V 160 TJ = 125ºC ---- External Lead Current Limit 2.0 140 1.8 120 ID - Amperes R DS(on) - Normalized 25 TJ - Degrees Centigrade VDS - Volts 1.6 1.4 100 80 60 1.2 TJ = 25ºC 1.0 40 0.8 20 0.6 0 0 40 80 120 160 200 240 ID - Amperes © 2010 IXYS CORPORATION, All Rights Reserved 280 320 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 IXTK200N10L2 IXTX200N10L2 Fig. 7. Input Admittance Fig. 8. Transconductance 200 140 TJ = - 40ºC 180 120 160 25ºC 100 g f s - Siemens ID - Amperes 140 120 100 TJ = 125ºC 25ºC - 40ºC 80 60 125ºC 80 60 40 40 20 20 0 0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 0 8.0 20 40 60 80 VGS - Volts 100 120 140 160 180 200 220 ID - Amperes Fig. 10. Gate Charge Fig. 9. Forward Voltage Drop of Intrinsic Diode 320 16 280 14 240 12 200 10 VGS - Volts IS - Amperes VDS = 50V 160 120 TJ = 125ºC 80 I D = 100A I G = 10mA 8 6 4 TJ = 25ºC 40 2 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 0 Fig. Thermal Impedance 100 12. Maximum 200 300Transient 400 500 600 700 1.000 VSD - Volts Fig. 11. Capacitance 800 QG - NanoCoulombs Fig. 12. Maximum Transient Thermal Impedance ggg 0.200 100,000 f = 1 MHz Ciss 10,000 Z (th)JC - ºC / W Capacitance - PicoFarads 0.100 Coss 0.010 1,000 Crss 100 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.001 0.00001 0.0001 0.001 0.01 0.1 Pulse Width - Seconds 1 10 IXTK200N10L2 IXTX200N10L2 Fig. 13. Forward-Bias Safe Operating Area Fig. 14. Forward-Bias Safe Operating Area @ T C = 25ºC @ T C = 75ºC 1,000 1,000 RDS(on) Limit RDS(on) Limit 25µs 25µs 100µs 100µs 100 ID - Amperes External Lead Limit 1ms 10ms ID - Amperes 100 1ms 10ms 100ms DC 10 10 100ms DC TJ = 150ºC TJ = 150ºC TC = 25ºC Single Pulse TC = 75ºC Single Pulse 1 1 1 10 VDS - Volts © 2010 IXYS CORPORATION, All Rights Reserved 100 1 10 100 VDS - Volts IXYS REF: T_200N10L2(9R)1-26-10