Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM IXFB170N30P VDSS ID25 RDS(on) trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 300V 170A Ω 18mΩ 200ns PLUS264TM (IXFB) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ 300 300 V V VGSS Continuous ±20 V VGSM Transient ±30 V ID25 ILRMS IDM TC = 25°C Leads Current Limit, RMS TC = 25°C, pulse width limited by TJM 170 75 500 A A A IA TC = 25°C 85 A EAS TC = 25°C 5 J dV/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 20 V/ns PD TC = 25°C 1250 W -55 ... +150 150 -55 ... +150 °C °C °C 300 260 °C °C 30..120/6.7..27 N/lb. 10 g TJ TJM Tstg TL TSOLD 1.6mm (0.062 in.) from case for 10s Plastic body for 10s FC Mounting force Weight Symbol Test Conditions (TJ = 25°C, unless otherwise specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 3mA 300 VGS(th) VDS = VGS, ID = 1mA 2.5 IGSS VGS = ±20V, VDS = 0V IDSS VDS = VDSS VGS = 0V RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 TJ = 125°C © 2008 IXYS CORPORATION, All rights reserved G D (TAB) S G = Gate S = Source D = Drain TAB = Drain Features • Fast intrinsic diode • Avalanche Rated • Unclamped Inductive Switching (UIS) rated • Very low Rth results high power dissipation • Low RDS(ON) and QG • Low package inductance Advantages • Low gate charge results in simple drive requirement • Improved Gate, Avalanche and dynamic dv/dt ruggedness • High power density Applications V 4.5 V ±200 nA 25 1.5 μA mA 18 mΩ • DC-DC coverters • Battery chargers • Switched-mode and resonant-mode power supplies • DC choppers • AC and DC motor control • Uninterrupted power supplies • High speed power switching applications DS100000(06/08) IXFB170N30P Symbol Test Conditions (TJ = 25°C, unless otherwise specified) gfs Characteristic Values Min. Typ. Max. VDS = 10V, ID = 60A, Note 1 57 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID =0.5 • ID25 RG = 1Ω (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 95 S 20 nF 2450 pF 27 pF 41 ns 29 ns 79 ns 16 ns 258 nC 82 nC 78 nC RthJC 0.10 RthCS °C/W °C/W 0.13 Source-Drain Diode PLUS264TM (IXFB) Outline Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. Symbol Test Conditions IS VGS = 0V 170 A ISM Repetitive, pulse width limited by TJM 500 A VSD IF = 85A, VGS = 0V, Note 1 1.3 V trr QRM IRM IF = 85A, -di/dt = 150A/μs 200 ns μC A 1.85 21 VR = 100V Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFB170N30P Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 180 300 VGS = 10V 8V 160 VGS = 10V 8V 250 7V 120 ID - Amperes ID - Amperes 140 100 6V 80 60 200 7V 150 6V 100 40 50 5V 20 5V 0 0 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 0 2 4 6 VDS - Volts 180 12 14 16 18 20 3.2 VGS = 10V 8V 160 140 7V 120 6V 100 80 60 40 VGS = 10V 2.8 RDS(on) - Normalized ID - Amperes 10 Fig. 4. RDS(on) Normalized to ID = 85A Value vs. Junction Temperature Fig. 3. Output Characteristics @ 125ºC 2.4 I D = 170A 2.0 I D = 85A 1.6 1.2 5V 0.8 20 0 0.4 0 1 2 3 4 5 6 7 -50 -25 0 VDS - Volts 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 85A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 90 2.8 VGS = 10V 2.6 External Lead Current Limit 80 TJ = 125ºC 2.4 70 2.2 ID - Amperes RDS(on) - Normalized 8 VDS - Volts 2.0 1.8 1.6 60 50 40 30 1.4 20 1.2 TJ = 25ºC 1.0 10 0.8 0 0 50 100 150 200 ID - Amperes © 2008 IXYS CORPORATION, All rights reserved 250 300 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 125 150 IXFB170N30P Fig. 7. Input Admittance Fig. 8. Transconductance 180 200 160 180 TJ = - 40ºC 160 25ºC 140 120 g f s - Siemens ID - Amperes 140 TJ = 125ºC 25ºC - 40ºC 100 80 60 120 125ºC 100 80 60 40 40 20 20 0 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 0 6.5 20 40 60 VGS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode 100 120 140 160 180 200 Fig. 10. Gate Charge 10 350 VDS = 150V 9 I D = 85A 300 8 250 I G = 10mA 7 VGS - Volts IS - Amperes 80 ID - Amperes 200 150 100 6 5 4 3 TJ = 125ºC 2 TJ = 25ºC 50 1 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 0 40 VSD - Volts 80 120 160 200 240 280 QG - NanoCoulombs Fig. 12. Forward-Bias Safe Operating Area Fig. 11. Capacitance 100,000 1,000.0 RDS(on) Limit Ciss 100.0 100µs ID - Amperes Capacitance - PicoFarads 25µs 10,000 Coss 1,000 100 10.0 1ms 1.0 TJ = 150ºC Crss TC = 25ºC Single Pulse f = 1 MHz 10 10ms DC 0.1 0 5 10 15 20 25 30 35 40 VDS - Volts 10 100 100ms 1000 VDS - Volts IXYS reserves the right to change limits, test conditions, and dimensions. IXYS REF: F_170N30P(9S) 06-24-08 IXFB170N30P Fig. 12. Maximum Transient Thermal Impedance 1.000 Z(th)JC - ºC / W 0.100 0.010 0.001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2008 IXYS CORPORATION, All rights reserved IXYS REF: F_170N30P(9S) 06-24-08